| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,970 pcs
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1970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The 1N4148,113 from Motorola Semicondutor is a silicon epitaxial planar diode designed for fast switching applications. It offers a repetitive peak reverse voltage of 100V and a forward continuous current of 300mA, with an average forward current of 150mA.
Key electrical characteristics include a maximum forward voltage of 1V at 10mA and a typical reverse leakage current of 25nA at 20V. The diode exhibits a fast reverse recovery time, with a typical value of 4ns under specific test conditions. Its capacitance is typically 4pF at 0V and 1MHz.
This component is housed in a DO-35 (DO-204AH) axial package, suitable for through-hole mounting. The junction temperature has a maximum rating of 175°C, with a storage temperature range from -65°C to +150°C.
Applications include extreme fast switching circuits. The diode is electrically equivalent to the 1N914.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 100V, and the maximum reverse voltage is 75V.
The maximum forward continuous current is 300mA, and the maximum repetitive peak forward current is 500mA.
The maximum forward voltage is 1V at a forward current of 10mA.
The typical reverse recovery time is 4ns under test conditions of IF = 10mA, VR = 6V, and RL = 100 ohms.
The 1N4148 is available in a DO-35 (DO-204AH) axial-lead through-hole package.
The maximum junction temperature is 175°C, and the storage temperature range is -65°C to +150°C.
The typical diode capacitance is 4pF at 0V reverse bias and 1MHz.