| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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323 pcs
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323 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Semiconductors 1N4148 is a silicon epitaxial planar diode designed for extreme fast switching applications. It offers a repetitive peak reverse voltage of 100V and a reverse voltage of 75V.
Key electrical characteristics include a forward continuous current of 300mA and an average forward current of 150mA. The diode exhibits a typical forward voltage of 1V at 10mA and a low reverse current, with a maximum of 25nA at 20V.
This diode has a typical junction capacitance of 4pF at 1MHz and a fast reverse recovery time, with values as low as 4ns under specific test conditions. It is rated for a maximum junction temperature of 175°C and operates within a storage temperature range of -65°C to +150°C.
The 1N4148 is housed in a DO-35 (DO-204AH) case, weighing approximately 105mg. It is available in tape and reel or ammopack packaging options, with standard box quantities of 50,000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage for the 1N4148 diode is 100V.
The forward continuous current rating of the 1N4148 diode is 300mA.
The typical forward voltage of the 1N4148 diode at 10mA is 1V.
The reverse recovery time for the 1N4148 diode is typically 8ns under IF=IR=10mA conditions, and 4ns under IF=10mA, VR=6V conditions.
The 1N4148 diode is supplied in a DO-35 (DO-204AH) case.