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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46 pcs
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46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current | |
| Current | |
| Current - Average Rectified (Io) | |
| Forward Voltage | |
| Lead Style | |
| Mounting Type | |
| Non-Repetitive Surge Current | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package / Case | |
| Repetitive Peak Reverse Voltage | |
| Reverse Current | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Voltage - Forward (Vf) (Max) @ If |
The 1N3673AR is a silicon standard recovery diode from GeneSiC Semiconductor, designed for high voltage and high current rectification applications. It features a repetitive peak reverse voltage (VRRM) of 1000V and a continuous forward current (IF) of 12A. The forward voltage drop is typically 1.1V at 12A and 25°C, with a reverse current of 15µA at 50V and 175°C. The device offers a non-repetitive surge current capability of 240A for an 8.3ms half sine wave, making it suitable for demanding power circuits.
The diode is packaged in a DO-203AA (DO-4) stud mount configuration, allowing for chassis mounting with excellent thermal management. The operating junction temperature range is -65°C to 200°C. The 'R' suffix indicates reverse polarity, where the stud is the anode. This component is not ESD sensitive and provides standard recovery performance with recovery time greater than 500ns.
Typical applications include power supply rectification, DC power conversion, battery charging systems, and industrial power control. The robust DO-4 package ensures reliable operation in harsh environments.
1000V.
12A.
1.1V at 12A and 25°C.
Standard recovery >500ns.
DO-203AA (DO-4) stud mount.
240A for 8.3ms half sine wave.
-65°C to 200°C.