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18,647 pcs
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18647 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Thomson-CSF 1N3595 is an epitaxial planar silicon diode engineered for applications requiring low leakage and high conductance. This diode features a peak repetitive reverse voltage of 150V and a peak working reverse voltage of 125V.
With an average forward current rating of 150mA and a forward steady-state current of 225mA, the 1N3595 offers robust performance. Its electrical characteristics include a breakdown voltage of 150V at 100µA reverse current and a low capacitance of 8pF at 1MHz.
The diode is housed in a standard JEDEC DO-35 case, suitable for through-hole mounting. The operating and storage junction temperature range is from -65°C to +200°C, ensuring reliability in various environmental conditions.
This component is designed for applications where precise voltage regulation and minimal current draw are critical. Its low leakage characteristic makes it suitable for sensitive electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 150 V.
The breakdown voltage is 150 V at 100µA reverse current.
The forward voltage is between 0.65 V and 0.80 V at 10mA.
The capacitance is 8 pF at 1MHz and 0V reverse voltage.
The 1N3595 is in a DO-35 case.