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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N3209 is a silicon standard recovery diode from GeneSiC Semiconductor, part of the 1N3208 thru 1N3211R series. It features a repetitive peak reverse voltage of 100V and an average forward current rating of 15A. The forward voltage is 1.5V at 15A.
This diode is designed for high surge capability and is not ESD sensitive. It is offered in a DO-5 (DO-203AB) stud mount package with standard polarity where the stud is the cathode. The operating junction temperature range is -55°C to 150°C.
Typical applications include power rectification and general purpose switching in industrial and commercial equipment. The stud mount package allows for efficient heat sinking to the chassis.
The 1N3209 has a repetitive peak reverse voltage (VRRM) of 100V, an RMS reverse voltage of 70V, and a DC blocking voltage of 100V.
The average forward current (IF) is 15A.
The forward voltage (VF) is 1.5V at a forward current of 15A and junction temperature of 25°C.
The 1N3209 is available in a DO-203AB (DO-5) stud mount package. The mounting type is chassis or stud mount, and the termination style is stud.
The junction temperature range is -55°C to 150°C, and the storage temperature range is also -55°C to 150°C.
The reverse current (IR) is 10µA at VR=50V and Tj=25°C, and 10mA at VR=50V and Tj=150°C.