| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ESM 1N3070 is a small signal diode designed for general-purpose applications. It features a maximum repetitive reverse voltage of 200V and an average rectified forward current of 500mA. The diode exhibits a forward voltage of 1.0V at 100mA and a reverse leakage of 100nA at 175V.
With a power dissipation rating of 500mW and a junction-to-ambient thermal resistance of 300°C/W, the 1N3070 is suitable for various electronic circuits. It operates within a storage temperature range of -65°C to +200°C and an operating junction temperature of up to 175°C.
The diode comes in a DO-35 package, which is a common glass package for small signal diodes. This package type is typically mounted through-hole, making it easy to integrate into circuit boards.
Key electrical characteristics include a breakdown voltage of 200V, a total capacitance of 5pF at 1MHz, and a reverse recovery time of 50ns. These specifications make the 1N3070 a reliable component for signal rectification and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage is 200V.
The average rectified forward current is 500mA.
The forward voltage is 1.0V at 100mA.
The storage temperature range is -65°C to +200°C.
The 1N3070 is supplied in a DO-35 package.