Mfr Part #:

1N23WE

Mfr Name: Sylvania

The 1N23WE is a Silicon Mixer Diode from Sylvania, operating in the 8.0 to 12.4 GHz frequency range. It is designed for applications requiring reliable performance within a wide temperature range.

✓ Total Stock: 27 pcs

$ Price Range: $0.99

1N23WE Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	27 pcs On Request	27 pcs	On Request	1	On Request	On Request	2026-02-25 06:16:38	On Request	On Request

1N23WE Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Sylvania
Frequency Range	8.0 to 12.4 GHz

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1N23WE Description

Short technical summary and product information.

The 1N23WE is a Silicon Mixer Diode manufactured by Sylvania. This component is specifically engineered for applications operating within the frequency range of 8.0 to 12.4 GHz. It offers a broad operating temperature range, from a minimum of -55°C to a maximum of 150°C, ensuring performance in diverse environmental conditions.

As a mixer diode, the 1N23WE is suitable for signal mixing and detection circuits in RF systems. Its design focuses on providing efficient operation within its specified frequency band. The diode's characteristics make it a component choice for engineers developing radio frequency and microwave applications where precise signal handling is critical.

1N23WE Quick Information

Product Type: Silicon Mixer Diode

Canonical Name: 1N23WE Silicon Mixer Diode

Subcategory: RF Diode

1N23WE Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

1N23WE Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

1N23WE Features

Silicon mixer diode for RF applications.
Operates from 8.0 to 12.4 GHz.
Wide temperature range: -55°C to 150°C.
Suitable for signal mixing and detection.

1N23WE Applications

Used in X-band radar receiver circuits.
Suitable for 8.0 to 12.4 GHz mixer applications.
Ideal for microwave signal detection systems.
Applied in RF communication equipment.
Used in high-frequency signal processing modules.

1N23WE FAQs

5 frequently asked questions generated from this part’s specifications.

What is the operating frequency range of the 1N23WE diode?

The 1N23WE diode is designed for applications operating from 8.0 to 12.4 GHz.

What are the minimum and maximum operating temperatures for the 1N23WE diode?

The 1N23WE diode has a minimum operating temperature of -55°C and a maximum operating temperature of 150°C.

Is the 1N23WE diode RoHS compliant?

Yes, the 1N23WE diode is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 1N23WE diode?

The Moisture Sensitivity Level (MSL) for the 1N23WE diode is 1 Unlimited.

What is the REACH status for the 1N23WE diode?

The REACH status for the 1N23WE diode is REACH Unaffected.