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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N120B is an N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, belonging to their NPT Series.
This component is designed for applications requiring high voltage and current handling capabilities. It features a maximum continuous current rating of 5.3A and a maximum collector-emitter voltage rating of 1200V. The IGBT technology combines the high input impedance of a MOSFET with the high current and low saturation voltage capability of a bipolar transistor.
Performance curves indicate a typical capacitance of 6 nF at a Vce of 10V. The part is described as an NPT Series N-Channel IGBT, suggesting a focus on performance and reliability in demanding applications.
Further details regarding specific switching characteristics, thermal performance, and package information would typically be found in the full datasheet. This component is suitable for power switching applications where high voltage blocking and efficient current conduction are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 1N120B has a maximum continuous current rating of 5.3A.
The 1N120B has a maximum collector-emitter voltage rating of 1200V.
The typical capacitance of the 1N120B at 10V Vce is 6 nF.