| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N1200A is a silicon standard recovery diode manufactured by Motorola Semiconductor. It offers a continuous forward current of 12A and a wide repetitive peak reverse voltage (VRRM) range from 50V to 600V, making it suitable for various power applications.
This diode features a high surge capability and is housed in a DO-4 package, designed for through-hole mounting. The operating temperature range is -55°C to 150°C, and the storage temperature is also within this range. The typical forward voltage drop is 1.1V at 12A and 25°C, with a reverse current of 10μA at 50V and 175°C.
Key electrical characteristics include a thermal resistance junction-to-case of 2.00°C/W. The non-repetitive forward surge current is rated at 200A for a half sine wave pulse of 8.3ms. The part is noted as not being ESD sensitive.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 1N1200A has a repetitive peak reverse voltage of 100 V, an RMS reverse voltage of 70 V, and a DC blocking voltage of 100 V.
The continuous forward current rating is 12 A.
The typical forward voltage is 1.1 V at a forward current of 12 A.
The 1N1200A is available in a DO-4 through-hole package.
The maximum non-repetitive surge forward current is 200 A.
Maximum reverse current is 10 µA at 50 V reverse voltage and 175°C junction temperature.
The operating and storage temperature range is -55°C to 150°C.