BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| SVHC Present |
The Vishay Dale 1N1200A is a silicon standard recovery diode with a repetitive peak reverse voltage (VRRM) ranging from 50V to 600V. It is designed for high surge capability and comes in a DO-4 package.
This diode can handle a continuous forward current (IF) of 12A at a case temperature of 150°C. The typical forward voltage (VF) is 1.1V at 12A and 25°C. The reverse current (IR) is a maximum of 10µA at 50V and 175°C.
Operating and storage temperatures for the 1N1200A range from -55°C to 150°C. The thermal resistance from junction to case (RthJC) is 2.00°C/W. It also offers a high surge non-repetitive forward current capability of 200A for an 8.3ms half sine wave.
This component is not ESD sensitive and is suitable for various power rectification applications where high surge handling is required.
| Qty | Low | High |
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| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage of the 1N1200A is 600 V.
The continuous forward current of the 1N1200A is 12 A, tested at a case temperature of 150 °C.
The typical forward voltage of the 1N1200A is 1.1 V, measured at a forward current of 12 A and a junction temperature of 25 °C.
The 1N1200A is supplied in a DO-4 package.
The operating temperature range for the 1N1200A is -55 °C to 150 °C.
The maximum reverse current for the 1N1200A is 10 μA, measured at a reverse voltage of 50 V and a junction temperature of 175 °C.
The thermal resistance from junction to case for the 1N1200A is 2.00 °C/W.