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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current (IF) | |
| Current | |
| DC Blocking Voltage (VDC) | |
| Forward Voltage (VF) at 30A | |
| Forward Voltage (Vf) | |
| Lead Style | |
| Mounting Type | |
| Non-Repetitive Surge Current (IFSM) | |
| Operating Junction Temperature (Tj) | |
| Operating Temperature | |
| Package / Case | |
| Polarity | |
| RMS Reverse Voltage (VRMS) | |
| Recovery Time (trr) | |
| Repetitive Peak Reverse Voltage (VRRM) | |
| Reverse Leakage Current (IR) | |
| Reverse Leakage Current at High Temperature (IR) | |
| Speed | |
| Storage Temperature | |
| Storage Temperature (Tstg) | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Thermal Resistance, Junction to Case (RthJC) | |
| Voltage |
The SSDI 1N1199RB is a standard recovery silicon rectifier diode in a DO-4 (DO-203AA) stud mount package with reverse polarity (stud is anode). It is rated for a repetitive peak reverse voltage of 50 V and a continuous forward current of 12 A.
Key electrical specifications include a forward voltage of 1.1 V at 12 A (25 °C), a non-repetitive surge current capability of 240 A (8.3 ms half sine wave), and a reverse leakage current of 10 μA at 25 °C (50 V). The device operates over a junction temperature range of -65 °C to 200 °C and has a thermal resistance of 2.00 °C/W from junction to case.
The 1N1199RB is suitable for general purpose power rectification, power supplies, converters, and other applications requiring a robust standard recovery diode in a stud mount form factor.
50 V.
12 A.
1.1 V at 12 A, 25 °C junction temperature.
240 A for an 8.3 ms half sine wave at 25 °C junction temperature.
-65 °C to 200 °C.
DO-203AA (DO-4) stud mount. The part has reverse polarity, so the stud is the anode.