| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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83 pcs
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83 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-29 00:15:08 | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale 1N1184 is a power silicon rectifier diode designed for high reliability applications. It features a low leakage current series and good surge current capability up to 1000A.
Key electrical specifications include an average forward current of 35A and a maximum repetitive peak reverse voltage (VRRM) ranging from 50V to 1000V, depending on the specific variant. The diode also offers a high I²t rating for fusing, indicating robust protection against overcurrent conditions.
This rectifier is housed in a DO-203AB (DO-5) package, suitable for through-hole mounting. Its design can meet stringent military, aerospace, and other high reliability requirements, making it a versatile component for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum average forward current is 35 A under 1-phase operation with 180° sinusoidal conduction.
The repetitive peak reverse voltage (VRRM) ranges from 50 V to 1000 V, depending on the specific device variant.
The 1N1184 is housed in a DO-203AB (DO-5) package.
The peak one-cycle non-repetitive surge current is 480 A for a 50 Hz half-cycle and 500 A for a 60 Hz half-cycle.
The device operates over a junction temperature range of -65 °C to 200 °C.