| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,500 pcs
|
72500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 1HP04CH-TL-W is a P-Channel enhancement mode MOSFET from On Semiconductor, designed for low-power switching applications. It features a maximum drain-source voltage of 100V and a nominal drain current of 170mA.
With a maximum on-resistance of 18Ohm at 80mA and 10V gate drive, this device offers efficient switching performance. The gate threshold voltage is 2.6V maximum at 100µA, and the maximum gate-source voltage is ±20V. Input capacitance is 14pF at 20V drain-source, and gate charge is 0.9nC at 10V.
The device is housed in a surface mount package compatible with TO-236-3, SC-59, and SOT-23-3 footprints, with a supplier device package designation of 3-CPH. Operating junction temperature range is up to 150°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.14 | $0.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The nominal drain current is 170mA (Ta).
It is available in a surface mount package compatible with TO-236-3, SC-59, and SOT-23-3, with a supplier device package of 3-CPH.
The maximum junction operating temperature is 150°C.
The maximum on-resistance (Rds on) is 18Ohm at Id=80mA and Vgs=10V.
The maximum gate threshold voltage (Vgs(th)) is 2.6V at Id=100µA.
The maximum input capacitance (Ciss) is 14pF at Vds=20V.