1HN04CH-TL-W The 1HN04CH-TL-W is an N-Channel MOSFET from On Semiconductor. It features a maximum drain-source voltage of 100V, nominal drain current of 270mA, and on-resistance of 8 Ohms at 10V gate drive.
Mfr Part #:

1HN04CH-TL-W

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 1HN04CH-TL-W is an N-Channel MOSFET from On Semiconductor. It features a maximum drain-source voltage of 100V, nominal drain current of 270mA, and on-resistance of 8 Ohms at 10V gate drive.
✓ Total Stock: 2,789 pcs
$ Price Range: $0.20 - $1.19

1HN04CH-TL-W Available from 1 distributor

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1HN04CH-TL-W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

1HN04CH-TL-W Description

Short technical summary and product information.

The 1HN04CH-TL-W is an N-Channel MOSFET from On Semiconductor, designed for low-power switching and amplification in surface-mount applications. It features a maximum drain-source voltage of 100V and a nominal drain current of 270mA. The on-resistance is typically 8 Ohms at 140mA drain current with a 10V gate drive. The device is built with MOSFET (Metal Oxide) technology and offers a gate charge of 0.9 nC at 10V and input capacitance of 15 pF at 20V drain-source voltage. The gate threshold voltage is 2.6V maximum at 100µA. This MOSFET is available in a surface-mount package: TO-236-3, SC-59, or SOT-23-3, with a supplier device package of 3-CPH. It operates over a junction temperature range up to 150°C. The part is suitable for various low-power switching circuits, including load switches and signal routing in compact electronic devices.

1HN04CH-TL-W Quick Information

Product Type: N-Channel MOSFET
Canonical Name: 1HN04CH-TL-W N-Channel MOSFET, 100V, 270mA
Subcategory: Single MOSFET

1HN04CH-TL-W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

1HN04CH-TL-W Estimated Pricing

Qty Low High
1+ $1.19 $1.19
10+ $0.85 $0.85
100+ $0.53 $0.53
500+ $0.37 $0.37
1,000+ $0.31 $0.31
3,000+ $0.27 $0.27
6,000+ $0.24 $0.24
9,000+ $0.22 $0.22
24,000+ $0.20 $0.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

1HN04CH-TL-W Features

  • N-Channel MOSFET with 100V drain-source rating.
  • Maximum drain current of 270mA.
  • Low on-resistance: 8 Ohm at 10V gate drive.
  • Surface-mount SOT-23-3 package.
  • Operating temperature up to 150°C.

1HN04CH-TL-W Applications

  • Suitable for low-power switching circuits.
  • Ideal for portable electronics.
  • Use in load switch applications.
  • For signal switching in battery-powered devices.

1HN04CH-TL-W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

100V.

What is the maximum drain current?

270mA (Ta).

What is the on-resistance?

8 Ohm max at 140mA, 10V.

What is the operating temperature range?

Maximum junction temperature 150°C.

What package is this MOSFET available in?

TO-236-3, SC-59, SOT-23-3.

Is this component RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

2.6V max at 100µA.

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