| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,789 pcs
|
2789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 1HN04CH-TL-W is an N-Channel MOSFET from On Semiconductor, designed for low-power switching and amplification in surface-mount applications. It features a maximum drain-source voltage of 100V and a nominal drain current of 270mA. The on-resistance is typically 8 Ohms at 140mA drain current with a 10V gate drive. The device is built with MOSFET (Metal Oxide) technology and offers a gate charge of 0.9 nC at 10V and input capacitance of 15 pF at 20V drain-source voltage. The gate threshold voltage is 2.6V maximum at 100µA. This MOSFET is available in a surface-mount package: TO-236-3, SC-59, or SOT-23-3, with a supplier device package of 3-CPH. It operates over a junction temperature range up to 150°C. The part is suitable for various low-power switching circuits, including load switches and signal routing in compact electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.19 | $1.19 |
| 10+ | $0.85 | $0.85 |
| 100+ | $0.53 | $0.53 |
| 500+ | $0.37 | $0.37 |
| 1,000+ | $0.31 | $0.31 |
| 3,000+ | $0.27 | $0.27 |
| 6,000+ | $0.24 | $0.24 |
| 9,000+ | $0.22 | $0.22 |
| 24,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
270mA (Ta).
8 Ohm max at 140mA, 10V.
Maximum junction temperature 150°C.
TO-236-3, SC-59, SOT-23-3.
RoHS3 compliant (unverified).
2.6V max at 100µA.