| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The Infineon Technologies 1EDN7512GXTMA1 is a single-channel, low-side gate driver IC designed to drive logic and normal level MOSFETs, including GaN HEMT devices. It features a robust output stage capable of 4A source and 8A sink current. The device boasts a typical propagation delay of 19ns with a propagation delay accuracy of +6/-4 ns.
This gate driver operates within a voltage range of 4.5V to 20V and is specified for an operating temperature range of -40°C to 150°C. It includes features such as -10V input voltage robustness and 5A reverse current robustness. The 1EDN7512GXTMA1 is housed in a 6-WDFN exposed pad package (PG-WSON-6-1) and is designed for surface mounting.
Key electrical characteristics include a 4.5ns to 6.5ns rise time, N-Channel MOSFET gate drive, and both inverting and non-inverting input types. The IC is suitable for applications such as switch-mode power supplies (SMPS), DC-DC converters, and low-voltage drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.78 | $0.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 20V.
6-WDFN Exposed Pad (PG-WSON-6-1) for surface mount.
-40°C to 150°C.
4A or 8A peak output current.
19ns typical with accuracy of +6/-4ns.
Inverting and non-inverting.
Single N-channel MOSFET.