| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The Infineon Technologies 1EDN7136UXTSA1 is a single-channel EiceDRIVER™ gate driver IC designed for driving GaN SG HEMTs and Si MOSFETs. It features a truly differential input circuitry to prevent false triggering and supports high common-mode input voltage ranges up to ±200 V for high-side operation.
This gate driver provides a peak source/sink current of 1.0 A and an input pulse blanking time of 60 ns, making it suitable for optimizing switching speeds. It is compatible with 3.3 V or 5 V input logic and includes an active Miller clamp with 5 A sink capability to prevent induced turn-on.
The 1EDN7136UXTSA1 is qualified for industrial applications according to JEDEC standards. Its potential applications include synchronous rectifiers and Class-E resonant wireless power systems. The device is housed in a PG-TSNP-7 package suitable for surface mounting.
Key features include high immunity to common-mode voltage transitions (100 V/ns), an active bootstrap clamp to prevent overcharging, and four driving strength variants to optimize performance without external gate resistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.84 | $0.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 1EDN7136UXTSA1 has a peak source/sink current of 1.0 A.
The input pulse blanking time for the 1EDN7136UXTSA1 is 60 ns.
The high-side common-mode input voltage range (CMR) is up to ± 200 V.
It is compatible with 3.3 V or 5 V input logic.
The package type is PG-TSNP-7.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level is Level 1.