1EDN7136UXTSA1 The Infineon Technologies 1EDN7136UXTSA1 is a single-channel gate driver IC optimized for GaN and Si MOSFETs. It offers a peak source/sink current of 1.0 A and an input pulse blanking time of 60 ns.
Mfr Part #:

1EDN7136UXTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies 1EDN7136UXTSA1 is a single-channel gate driver IC optimized for GaN and Si MOSFETs. It offers a peak source/sink current of 1.0 A and an input pulse blanking time of 60 ns.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.84

1EDN7136UXTSA1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

1EDN7136UXTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Tape & Reel

1EDN7136UXTSA1 Description

Short technical summary and product information.

The Infineon Technologies 1EDN7136UXTSA1 is a single-channel EiceDRIVER™ gate driver IC designed for driving GaN SG HEMTs and Si MOSFETs. It features a truly differential input circuitry to prevent false triggering and supports high common-mode input voltage ranges up to ±200 V for high-side operation.

 

This gate driver provides a peak source/sink current of 1.0 A and an input pulse blanking time of 60 ns, making it suitable for optimizing switching speeds. It is compatible with 3.3 V or 5 V input logic and includes an active Miller clamp with 5 A sink capability to prevent induced turn-on.

 

The 1EDN7136UXTSA1 is qualified for industrial applications according to JEDEC standards. Its potential applications include synchronous rectifiers and Class-E resonant wireless power systems. The device is housed in a PG-TSNP-7 package suitable for surface mounting.

 

Key features include high immunity to common-mode voltage transitions (100 V/ns), an active bootstrap clamp to prevent overcharging, and four driving strength variants to optimize performance without external gate resistors.

1EDN7136UXTSA1 Quick Information

Product Type: Gate Driver IC
Canonical Name: 1EDN7136U EiceDRIVER™ 200 V high-side TDI gate driver IC
Subcategory: Gate Drivers

1EDN7136UXTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

1EDN7136UXTSA1 Estimated Pricing

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1+ $0.84 $0.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

1EDN7136UXTSA1 Features

  • Optimized for GaN SG HEMTs and Si MOSFETs.
  • 1.0 A peak source/sink current capability.
  • 60 ns input pulse blanking time.
  • ±200 V high-side common-mode voltage range.
  • 5 A active Miller clamp sink capability.

1EDN7136UXTSA1 Applications

  • Synchronous rectifier applications.
  • Class-E resonant wireless power.
  • DC-DC converter designs.
  • Motor drive applications.

1EDN7136UXTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the peak source/sink current for the 1EDN7136UXTSA1?

The 1EDN7136UXTSA1 has a peak source/sink current of 1.0 A.

What is the input pulse blanking time for this gate driver?

The input pulse blanking time for the 1EDN7136UXTSA1 is 60 ns.

What is the common-mode rejection ratio (CMR) for high-side operation?

The high-side common-mode input voltage range (CMR) is up to ± 200 V.

What logic levels are compatible with the 1EDN7136UXTSA1?

It is compatible with 3.3 V or 5 V input logic.

What is the package type for the 1EDN7136UXTSA1?

The package type is PG-TSNP-7.

Is the 1EDN7136UXTSA1 RoHS compliant?

The RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is Level 1.

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