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1EDN7136GXTMA1 The Infineon Technologies 1EDN7136GXTMA1 is a single-channel gate driver IC optimized for GaN and Si MOSFETs. It operates from 4.2V to 11V and provides up to 1.5A peak output current.
Mfr Part #:

1EDN7136GXTMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies 1EDN7136GXTMA1 is a single-channel gate driver IC optimized for GaN and Si MOSFETs. It operates from 4.2V to 11V and provides up to 1.5A peak output current.
✓ Total Stock: 7,000 pcs
$ Price Range: $2.01

1EDN7136GXTMA1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
7,000 pcs
On Request
7000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
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1EDN7136GXTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
Halogen Free
Input Type
Mounting Type
Number of Drivers
Operating Temperature
Rise
Supplier Device Package
Voltage
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1EDN7136GXTMA1 Description

Short technical summary and product information.

The Infineon Technologies 1EDN7136GXTMA1 is a single-channel gate driver IC designed for driving GaN HEMTs and Si MOSFETs. It features a truly differential input (TDI) to prevent false triggering and offers four driving strength variants for optimized switching speed.

 

Key electrical specifications include an operating voltage range of 4.2V to 11V and a peak source/sink current capability of 1.5A. The device boasts a fast rise time of 5.5ns and an input pulse blanking time of 45ns, enabling high-performance system designs with fast-switching transistors.

 

This gate driver IC is housed in a PG-VSON-10-4 package, a 10-VFDFN exposed pad, suitable for surface mounting. It operates within an industrial temperature range of -40°C to 125°C (TJ).

 

Potential applications include synchronous rectifiers, Class-E resonant wireless power, DC-DC converters, BLDC/PMSM motor drives, and Class-D audio amplifiers.

1EDN7136GXTMA1 Quick Information

Product Type: Gate Driver IC
Series: 1EDN7xxxG
Canonical Name: 1EDN7136GXTMA1 Single-Channel Gate Driver IC
Subcategory: Gate Drivers

1EDN7136GXTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

1EDN7136GXTMA1 Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

1EDN7136GXTMA1 Features

  • Optimized for GaN and Si MOSFETs.
  • 1.5A peak source/sink current capability.
  • 4.2V to 11V operating voltage range.
  • Fast 5.5ns rise time.
  • PG-VSON-10-4 surface mount package.

1EDN7136GXTMA1 Applications

  • Synchronous rectifier applications.
  • Class-E resonant wireless power.
  • DC-DC converter designs.
  • BLDC/PMSM motor drives.
  • Class-D audio amplifiers.

1EDN7136GXTMA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating voltage range for the 1EDN7136GXTMA1?

The operating voltage range is 4.2V to 11V.

What package type is the 1EDN7136GXTMA1 available in?

It is available in a 10-VFDFN Exposed Pad package, specifically PG-VSON-10-4, for surface mounting.

What is the operating temperature range for this gate driver IC?

The operating temperature range is -40°C to 125°C (TJ).

What is the peak output current of the 1EDN7136GXTMA1?

The peak source/sink current capability is 1.5A.

What is the rise time for the 1EDN7136GXTMA1?

The rise time is 5.5ns.

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