1EDI20I12AF
Infineon
The Infineon 1EDI20I12AF is a single-channel isolated gate driver IC designed for high-voltage applications. It offers up to 10A peak output current and operates in a compact DSO-8 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,397 pcs
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1397 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Halogen Free | |
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The Infineon 1EDI60N12AF is a single-channel isolated gate driver designed for driving high-power IGBTs and MOSFETs. It features a 10 A typical peak output current and a 40 V absolute maximum output supply voltage, enabling efficient switching in high-voltage applications. The device provides high common-mode transient immunity of greater than 100 kV/s and a propagation delay of 120 ns typical, ensuring reliable performance in noisy environments.
The input voltage range of 3 V to 15 V allows direct interface with 3.3 V microcontrollers. The driver is available in a space-saving DSO-8 package with 150 mil body width and 4 mm creepage distance, suitable for surface mount assembly. The AF variant offers separate source and sink outputs for flexible gate drive configuration.
This gate driver is ideal for applications such as motor drives, inverters, power supplies, and renewable energy systems where robust isolation and high current drive are required.
| Qty | Low | High |
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| 1+ | $4.30 | $4.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3 V to 15 V.
DSO-8 (150 mil) surface mount package with 4 mm creepage.
10 A typical peak current.
120 ns typical.
Greater than 100 kV/s.