| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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251 pcs
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251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Storage Temperature |
The APNEC 18N20GH is an N-Channel Enhancement Mode Power MOSFET. It is designed with innovative technology to achieve low on-resistance and fast switching performance, making it suitable for a wide range of power applications.
Key electrical specifications include a drain-to-source voltage (VDS) of 200V, a continuous drain current (ID) of 18A, and a maximum power dissipation (PD) of 89W. The gate-to-source voltage (VGS) is rated at ±20V.
This MOSFET features a TO-252 package, which is ideal for commercial-industrial surface mount applications using infrared reflow techniques. Its low connection resistance makes it suitable for high current applications. The operating channel temperature is up to 150°C, with a storage temperature range of -55 to +150°C.
The 18N20GH series is RoHS Compliant and Halogen-Free, indicating adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage is 200V.
The continuous drain current is 18A.
The maximum power dissipation is 89W.
The 18N20GH is available in a TO-252 package.
The 18N20GH is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.