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45 pcs
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45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SBA5089Z from RF Micro Devices (now part of Qorvo, but listed under Siemens in the provided data) is a high-performance InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC Amplifier. Utilizing an InGaP process technology, it provides broadband performance up to 5 GHz with excellent thermal characteristics. The heterojunction design enhances breakdown voltage and minimizes leakage current.
This MMIC amplifier is suitable for applications requiring high gain and good intermodulation performance. Key electrical specifications include a typical small signal gain of 20.0 dB at 850 MHz and 18.0 dB at 1950 MHz. It delivers an output power of 19.7 dBm at 1dB compression at 850 MHz and 13.0 dBm at -45dBc ACP IS-95 at 1950 MHz. The output third-order intercept point (IP3) is typically 34.0 dBm at 1950 MHz.
The SBA5089Z operates from a single positive supply voltage and requires only DC-blocking capacitors, a bias resistor, and an optional RF choke for operation. It is housed in a SOT-89 package, making it suitable for surface-mount applications. Its robust design and performance characteristics make it ideal for PA driver amplifier, cellular, PCS, GSM, UMTS, IF amplifier, and wireless data applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical small signal gain is 20.0 dB at 850 MHz and 18.0 dB at 1950 MHz.
The output power at 1dB compression is 19.7 dBm at 850 MHz and 19.5 dBm at 1950 MHz.
The typical output third order intercept point (IP3) is 34.0 dBm at 1950 MHz.
The device operates from a single positive supply voltage, typically 4.9 V.
The SBA 5089 is available in a SOT-89 package.