| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,830 pcs
|
41830 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Gain | |
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| Noise Figure (dB Typ @ f) | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Voltage |
The 15GN03MA-TL-E is an NPN bipolar junction RF transistor manufactured by On Semiconductor. It is designed for high-frequency amplification and switching applications up to 1.5 GHz. Key electrical specifications include a maximum collector-emitter voltage of 10 V, a maximum collector current of 70 mA, and a typical transition frequency of 1.5 GHz. The transistor provides a typical gain of 13 dB at 0.4 GHz with a typical noise figure of 1.6 dB at the same frequency. DC current gain (hFE) is a minimum of 100 at 10 mA collector current and 5 V collector-emitter voltage.
Power dissipation is rated at 400 mW maximum, with a maximum junction temperature of 150°C. The device is available in a surface mount package compatible with SC-70 and SOT-323 footprints, specifically the 3-MCP supplier device package. This makes it suitable for compact RF designs where board space is limited.
Typical applications include RF amplifiers, oscillators, and low-noise front-end stages in communication equipment. The combination of high transition frequency, moderate gain, and low noise figure makes it appropriate for portable and battery-powered RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.60 | $0.60 |
| 10+ | $0.37 | $0.37 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.18 | $0.18 |
| 3,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 10 V.
It is available in SC-70 or SOT-323 surface mount packages, specifically the 3-MCP supplier device package.
The maximum junction temperature (Tj) is 150°C.
RoHS3 compliant (unverified).
The typical transition frequency (fT) is 1.5 GHz.
The typical gain is 13 dB at 0.4 GHz.
The maximum collector current (Ic) is 70 mA.