15GN03MA-TL-E RF NPN transistor from On Semiconductor with 10V Vce, 70mA Ic, 1.5GHz transition frequency, and 13dB typical gain at 0.4GHz. Surface mount SC-70/SOT-323 package.
Mfr Part #:

15GN03MA-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
RF NPN transistor from On Semiconductor with 10V Vce, 70mA Ic, 1.5GHz transition frequency, and 13dB typical gain at 0.4GHz. Surface mount SC-70/SOT-323 package.
✓ Total Stock: 41,830 pcs
$ Price Range: $0.18 - $0.60

15GN03MA-TL-E Available from 1 distributor

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✓ Non-Authorised
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41,830 pcs
41830 pcs On Request 1 On Request On Request On Request On Request On Request

15GN03MA-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

15GN03MA-TL-E Description

Short technical summary and product information.

The 15GN03MA-TL-E is an NPN bipolar junction RF transistor manufactured by On Semiconductor. It is designed for high-frequency amplification and switching applications up to 1.5 GHz. Key electrical specifications include a maximum collector-emitter voltage of 10 V, a maximum collector current of 70 mA, and a typical transition frequency of 1.5 GHz. The transistor provides a typical gain of 13 dB at 0.4 GHz with a typical noise figure of 1.6 dB at the same frequency. DC current gain (hFE) is a minimum of 100 at 10 mA collector current and 5 V collector-emitter voltage.

 

Power dissipation is rated at 400 mW maximum, with a maximum junction temperature of 150°C. The device is available in a surface mount package compatible with SC-70 and SOT-323 footprints, specifically the 3-MCP supplier device package. This makes it suitable for compact RF designs where board space is limited.

 

Typical applications include RF amplifiers, oscillators, and low-noise front-end stages in communication equipment. The combination of high transition frequency, moderate gain, and low noise figure makes it appropriate for portable and battery-powered RF circuits.

15GN03MA-TL-E Quick Information

Product Type: RF Transistor
Canonical Name: RF Transistor NPN, 10V, 70mA, 1.5GHz, SC-70/SOT-323
Subcategory: RF NPN Transistor

15GN03MA-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

15GN03MA-TL-E Estimated Pricing

Qty Low High
1+ $0.60 $0.60
10+ $0.37 $0.37
100+ $0.24 $0.24
500+ $0.18 $0.18
3,000+ $0.18 $0.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

15GN03MA-TL-E Features

  • NPN bipolar RF transistor.
  • Maximum collector-emitter voltage 10V.
  • Transition frequency 1.5 GHz typical.
  • Gain of 13 dB at 0.4 GHz typical.
  • Surface mount SC-70/SOT-323 package.

15GN03MA-TL-E Applications

  • Suitable for RF signal amplification.
  • Used in low-noise oscillator circuits.
  • Optimized for 0.4 GHz frequency range.
  • Ideal for portable RF devices.

15GN03MA-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 15GN03MA-TL-E?

The maximum collector-emitter voltage (Vce) is 10 V.

What package does the 15GN03MA-TL-E come in?

It is available in SC-70 or SOT-323 surface mount packages, specifically the 3-MCP supplier device package.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 150°C.

Is the 15GN03MA-TL-E RoHS compliant?

RoHS3 compliant (unverified).

What is the typical transition frequency?

The typical transition frequency (fT) is 1.5 GHz.

What is the typical gain at 0.4 GHz?

The typical gain is 13 dB at 0.4 GHz.

What is the maximum collector current?

The maximum collector current (Ic) is 70 mA.

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