| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 15GN01CA-TB-E is an NPN RF bipolar junction transistor from On Semiconductor designed for high-frequency amplification and switching applications. It features a maximum collector-base voltage of 15V, collector-emitter voltage of 8V, and a collector current rating of 50mA. The device offers a typical gain-bandwidth product of 1.5GHz and a DC current gain range of 200 to 400, making it suitable for RF signal processing.
Key electrical characteristics include a low output ON resistance of 2.0Ω typical and a small output capacitance of 1.2pF typical, which contribute to efficient high-frequency performance. The transistor is housed in a compact CP surface mount package, compliant with JEITA/JEDEC standards SC-59, TO-236, SOT-23, and TO-236AB. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel.
This component is lead-free (Pb Free) as indicated in the ordering information. It is intended for use in RF amplifier stages, oscillator circuits, and other high-speed switching applications where low saturation voltage and high transition frequency are required.
| Qty | Low | High |
|---|---|---|
| 3,248+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 8V.
The typical gain-bandwidth product is 1.5GHz, with a minimum of 1.0GHz at VCE=5V, IC=10mA.
It uses a CP surface mount package, also known as SC-59, TO-236, SOT-23, or TO-236AB.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
RoHS status is unverified; the datasheet indicates the part is lead-free (Pb Free).