15C01M-TL-E NPN bipolar junction transistor rated for 15V collector-emitter breakdown voltage and 700mA continuous collector current in a surface-mount SC-70 package.
Mfr Part #:

15C01M-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor rated for 15V collector-emitter breakdown voltage and 700mA continuous collector current in a surface-mount SC-70 package.
Total Stock: 12,000 pcs
$ Price Range: $0.06 - $0.39

15C01M-TL-E Available from 1 distributor

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12,000 pcs
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15C01M-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

15C01M-TL-E Description

Short technical summary and product information.

The 15C01M-TL-E is an NPN bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter breakdown voltage of 15 V and a maximum continuous collector current of 700 mA. The device can dissipate up to 300 mW of power and offers a minimum DC current gain (hFE) of 300 at 10 mA collector current and 2 V collector-emitter voltage. The typical transition frequency is 330 MHz, making it suitable for switching and amplification applications up to VHF frequencies.

 

This transistor is housed in a surface-mount SC-70 (SOT-323) package, also referred to as MCP3 by the supplier. It is designed for general-purpose switching and amplifier circuits where space is constrained. The maximum junction temperature is 150°C, ensuring reliable operation within typical ambient temperature ranges.

 

Applications include low-power switching, signal amplification, and driver stages in consumer electronics, industrial controls, and portable devices. The surface-mount package supports automated assembly processes.

15C01M-TL-E Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 15C01M-TL-E NPN Bipolar Transistor
Subcategory: Single BJT

15C01M-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

15C01M-TL-E Estimated Pricing

Qty Low High
1+ $0.39 $0.39
10+ $0.24 $0.24
100+ $0.15 $0.15
500+ $0.11 $0.11
1,000+ $0.10 $0.10
3,000+ $0.08 $0.08
9,000+ $0.07 $0.07
24,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

15C01M-TL-E Features

  • NPN bipolar junction transistor design.
  • 15V collector-emitter breakdown voltage.
  • 700mA maximum continuous collector current.
  • 330 MHz typical transition frequency.
  • Surface-mount SC-70 (SOT-323) package.

15C01M-TL-E Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for portable electronic devices.
  • Employed in driver and interface circuits.

15C01M-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 15C01M-TL-E?

15 V

What is the maximum collector current?

700 mA

What is the package type?

SC-70 (SOT-323) surface-mount package

What is the DC current gain (hFE)?

Minimum 300 at Ic=10mA, Vce=2V

What is the transition frequency?

330 MHz typical

What is the maximum power dissipation?

300 mW

Is the 15C01M-TL-E RoHS compliant?

RoHS3 Compliant (unverified)

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