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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,000 pcs
|
120000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Min/Max) @ Ib=10mA, Ic=200mA | |
| Collector Current (Pulse) Max | |
| Collector-Base Breakdown Voltage (V(BR)CBO) @ Ic=10μA, Ie=0A | |
| Collector-Base Voltage (VCBO) Max | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) @ Ic=1mA, RBE=∞ | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) @ Ie=10μA, Ic=0A | |
| Emitter-Base Voltage (VEBO) Max | |
| Fall Time (tf) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) @ Vcb=10V, f=1MHz | |
| Package / Case (JEDEC) | |
| Packing Type | |
| Power | |
| Standard Package Qty | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 15C01C-TB-E is an NPN bipolar junction transistor from On Semiconductor designed for low-frequency amplification and muting circuit applications. It features a maximum collector-to-emitter voltage of 15V, a maximum collector current of 700mA (1.4A pulse), and a collector dissipation of 300mW when mounted on a glass epoxy board.
This transistor offers a low collector-to-emitter saturation voltage of 150mV typical (300mV maximum) at IC=200mA and IB=10mA, with a typical on-resistance of 0.58Ω. The DC current gain ranges from 300 to 800 at VCE=2V and IC=10mA, and the gain-bandwidth product is 330MHz typical.
The device is available in a compact surface-mount package (TO-236, SC-59, SOT-23, TO-236AB) with a supplier device package designation of 3-CP. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.53 | $0.53 |
| 10+ | $0.36 | $0.36 |
| 100+ | $0.23 | $0.23 |
| 500+ | $0.15 | $0.15 |
| 1,000+ | $0.13 | $0.13 |
| 3,000+ | $0.11 | $0.11 |
| 6,000+ | $0.09 | $0.09 |
| 9,000+ | $0.08 | $0.08 |
| 24,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) is 15V.
The maximum continuous collector current is 700mA, with a pulse rating of 1.4A.
The 15C01C-TB-E is available in a surface-mount package: TO-236-3, SC-59, SOT-23-3 (supplier device package 3-CP).
The DC current gain ranges from 300 to 800 at VCE=2V and IC=10mA.
The maximum collector dissipation is 300mW when mounted on a glass epoxy board.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The datasheet states the device is Pb Free, but RoHS compliance is not verified by a document.