| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CYSTECH 12N60 is an N-Channel Power MOSFET designed for high voltage and high current applications. It offers improved characteristics such as fast switching time, low gate charge, and low on-state resistance. This MOSFET is suitable for high-speed switching applications including power supplies, PWM motor controls, and DC to DC converters.
Key electrical specifications include a Drain-Source Breakdown Voltage of 600V, a Continuous Drain Current of 12A, and a maximum On-State Resistance of 0.73Ω at VGS = 10V. The device also features a low gate charge of 44 nC and low output capacitance (Coss) of 18 pF.
Available in multiple package types including TO-220, TO-262/I PAK, TO-263/D PAK, and ITO-220/TO-220F, the 12N60 is designed for robust performance. Its operating temperature range is -55°C to +150°C, with a junction temperature also rated up to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the 12N60 is 12A.
The 12N60 MOSFET has a Drain-Source Breakdown Voltage of 600V.
The on-state resistance of the 12N60 at VGS = 10V is a maximum of 0.73Ω.
The 12N60 is available in TO-220, TO-262/I PAK, TO-263/D PAK, and ITO-220/TO-220F packages.
The operating temperature range for the 12N60 is -55°C to +150°C.