SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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120 pcs
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120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon 12CN10L is an N-channel OptiMOS®2 Power Transistor featuring logic-level gate operation and a very low on-resistance. With a drain-source breakdown voltage of 100V and a continuous drain current of 69A at 25°C, this transistor is suitable for demanding applications.
Key electrical characteristics include a typical gate threshold voltage of 1.84V and a maximum drain-source on-state resistance as low as 9.9 mΩ at VGS=10V, ID=69A. The device also boasts excellent dynamic characteristics with low gate charge and fast switching times, making it ideal for high-frequency switching and synchronous rectification.
Operating at temperatures up to 175°C, the 12CN10L is built for reliability in harsh environments. It comes in a PG-TO251-3-11 package, suitable for through-hole mounting.
This power transistor is Pb-free and RoHS compliant, meeting industry standards for environmental responsibility. Its performance metrics, such as the excellent gate charge x R DS(on) product (FOM), make it a compelling choice for power management solutions.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 69 A at 25°C.
The drain-source breakdown voltage is 100 V.
The typical gate threshold voltage is 1.84 V.
The maximum operating temperature is 175 °C.
The 12CN10L is supplied in a PG-TO251-3-11 package.
Yes, the 12CN10L is RoHS3 Compliant.
