| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Power Dissipation | |
| SVHC Present |
The Wolfspeed C4MS047120K is a Silicon Carbide Power MOSFET designed for industrial applications requiring high efficiency and power density. This N-Channel Enhancement Mode MOSFET features a 1200V drain-source voltage rating and a low Rds(on) at high operating temperatures.
Key electrical characteristics include a maximum gate-source voltage of +23V and a typical gate threshold voltage of 2.6V. It offers a DC continuous drain current of 50A at 25°C and a pulsed drain current of 147A. The device boasts high transient voltage robustness and a soft body diode with low Vds overshoot and ringing.
Packaged in a TO-247-4, the C4MS047120K is suitable for applications such as EV chargers, solar/ESS, motor control, industrial power supplies, and high voltage DC/DC converters. Its design benefits include higher efficiency, lower switching losses, and reduced system level cooling requirements, enabling system level price performance optimization.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the C4MS047120K is 1200V.
The typical gate threshold voltage (VGS(th)) is 2.6V at 25°C and 2.0V at 175°C.
The C4MS047120K comes in a TO-247-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Typical applications include EV Chargers, Solar/ESS, Motor Control, Industrial Power Supplies, and High Voltage DC/DC Converters.