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11N60S5 The N-A 11N60S5 is a Cool MOS™ Power Transistor with a 600V drain-source breakdown voltage and 11A continuous drain current. It features low gate charge and high dv/dt rating.
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11N60S5

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Mfr Name: N-A
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The N-A 11N60S5 is a Cool MOS™ Power Transistor with a 600V drain-source breakdown voltage and 11A continuous drain current. It features low gate charge and high dv/dt rating.
✓ Total Stock: 219 pcs
$ Price Range: $0.99

11N60S5 Available from 1 distributor

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219 pcs
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11N60S5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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11N60S5 Description

Short technical summary and product information.

The SPB11N60S5 from N-A is a Cool MOS™ Power Transistor designed for high-voltage applications. It offers a drain-source breakdown voltage of 600V and a continuous drain current of 11A at 25°C.

 

Key electrical characteristics include a low on-state resistance of 0.38 Ω at Tj=25°C and a gate threshold voltage between 3.5V and 5.5V. The transistor features ultra-low gate charge and effective capacitances, contributing to its high performance.

 

With a maximum power dissipation of 125W at 25°C and a wide operating temperature range of -55°C to +150°C, this device is suitable for demanding environments. It is packaged in a PG-TO263 surface-mount package.

 

Features such as periodic avalanche rating and extreme dv/dt rating make it a robust choice for power switching applications.

11N60S5 Quick Information

Product Type: Power Transistor
Series: SPB
Canonical Name: SPB11N60S5 Cool MOS™ Power Transistor
Subcategory: Cool MOS™

11N60S5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

11N60S5 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

11N60S5 Features

  • 600V drain-source breakdown voltage.
  • 11A continuous drain current.
  • 0.38 Ohm typical on-state resistance.
  • Ultra low gate charge.
  • PG-TO263 surface mount package.

11N60S5 Applications

  • Suitable for high voltage applications.
  • Designed for power switching circuits.
  • Features high dv/dt rating.
  • Periodic avalanche rated for reliability.

11N60S5 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the 11N60S5?

The maximum continuous drain current is 11A at 25°C and 7A at 100°C.

What is the drain-source breakdown voltage of the 11N60S5?

The drain-source breakdown voltage is 600V.

What is the typical on-state resistance (RDS(on)) for the 11N60S5?

The typical on-state resistance is 0.38 Ω at 25°C and 0.92 Ω at 150°C.

What is the gate threshold voltage range for the 11N60S5?

The gate threshold voltage is between 3.5V and 5.5V.

What is the package type for the 11N60S5?

The 11N60S5 is supplied in a PG-TO263 package.

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