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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 08CN10N from N-A is an N-channel OptiMOS®2 Power MOSFET. It is designed for high-frequency switching and synchronous rectification applications, offering a very low on-resistance and excellent gate charge times Rds(on) product (FOM).
Key electrical characteristics include a drain-source breakdown voltage of 100V and a maximum continuous drain current of 95A at 25°C. The on-state resistance (Rds(on)) is as low as 8.2 mΩ at 95A and 10V gate drive. The device operates at temperatures up to 175°C.
Packaged in a PG-TO263-3 surface-mount package, the 08CN10N is suitable for various power management designs. It is RoHS compliant and qualified according to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the 08CN10N is 95A at 25°C.
The drain-source breakdown voltage of the 08CN10N is 100V.
The typical on-state resistance (Rds(on)) for the 08CN10N is 6.1 mΩ at 95A and 10V gate drive in a TO-263 package.
The operating and storage temperature range for the 08CN10N is -55°C to 175°C.
The 08CN10N is available in the PG-TO263-3 package.