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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon 07N60S5 is a high-performance N-Channel Power MOSFET designed with revolutionary high-voltage technology. It features a 600V drain-source breakdown voltage and a continuous drain current rating of 7.3A at 25°C, with an RDS(on) of 0.6 Ohms.
This transistor is built for demanding applications, offering features such as ultra-low gate charge, periodic avalanche rating, and extreme dv/dt rating. Its electrical characteristics include a gate threshold voltage between 3.5V and 5.5V, and low input capacitance of 970pF.
The 07N60S5 is available in both PG-TO220 and PG-TO262 packages, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to +150°C, with a maximum power dissipation of 83W at 25°C. The thermal resistance from junction to case is a low 1.5 K/W.
Key electrical parameters include fast switching times with a typical rise time of 40ns and fall time of 20ns. The total gate charge is also optimized for efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The continuous drain current is 7.3A at 25°C and 4.6A at 100°C.
The typical drain-source on-state resistance is 0.54 Ohms at 25°C and 1.46 Ohms at 150°C.
The gate threshold voltage is between 3.5V and 5.5V.
The 07N60S5 is available in PG-TO220 and PG-TO262 packages.
The maximum operating and storage temperature is 150°C.
The typical input capacitance is 970pF.