| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
312 pcs
|
312 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
212 pcs
|
212 pcs | On Request | 1 | On Request | On Request | 0811+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Style | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPA028N08N3 G is a high-performance N-channel power MOSFET designed for demanding applications. It offers a breakdown voltage of 80V and a maximum continuous drain current of 89A at 25°C.
With a very low on-resistance of 2.8 mΩ, this MOSFET is optimized for high-frequency switching and DC/DC converters, contributing to improved efficiency. Its excellent gate charge x RDS(on) product (FOM) makes it suitable for applications requiring fast switching.
The device is housed in a TO-220FP package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 175°C and is Pb-free and halogen-free compliant.
Key electrical characteristics include a gate-source voltage of ±20V and a power dissipation of 42W at 25°C. The MOSFET is 100% avalanche tested, ensuring reliability in various operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V
TO-220FP through-hole
-55 °C to 175 °C
89 A at a case temperature of 25°C
2.8 mΩ at 25°C case temperature
42 W at 25°C case temperature