| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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333 pcs
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333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies 023NE7N is an N-Channel MOSFET from the OptiMOS 3 family. It is optimized for synchronous rectification and is ideal for high frequency switching and DC/DC converters. This MOSFET features a drain-source voltage (Vds) of 75V and a continuous drain current (Id) of 120A. The on-resistance (Rds(on)) is a maximum of 2.3 mΩ.
Available in TO220-3 and TO262-3 packages, the 023NE7N is suitable for various power management applications. Its design focuses on an excellent gate charge x Rds(on) product (FOM), contributing to efficient operation in demanding environments.
This component is well-suited for applications requiring robust power switching capabilities. Its specifications make it a reliable choice for designers working on power supplies, voltage regulators, and other power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 023NE7N is 75V.
The continuous drain current (Id) for the 023NE7N is 120A.
The maximum on-resistance (Rds(on)) for the 023NE7N is 2.3 mΩ.
The 023NE7N MOSFET is available in TO220-3 and TO262-3 packages.