On Semiconductor

<p>The ESD5484FCT5G is an ESD protection diode from On Semiconductor designed to protect sensitive components from electrostatic discharge. It is a bidirectional Zener-type TVS diode with a reverse standoff voltage of 5.0 V and a minimum breakdown voltage of 6.0 V at 1 mA. The device provides excellent clamping performance with a maximum clamping voltage of 11.5 V at a peak pulse current of 7 A (8/20 µs surge). Reverse leakage current is limited to 0.1 µA at 5 V standoff. The response time is less than 1 ns, making it suitable for high-speed signal lines.</p><p>&nbsp;</p><p>The ESD5484FCT5G meets IEC61000-4-2 Level 4 ESD protection with ±30 kV contact and air discharge, and IEC61000-4-4 Level 4 EFT protection. It features a low typical capacitance of 35 pF (max 45 pF) at 0 V, minimizing signal degradation. The device can dissipate up to 300 mW on FR-5 board and operates over a junction temperature range of -55°C to 150°C.</p><p>&nbsp;</p><p>The part is housed in an ultra-small 2-XFBGA/WLCSP package with body dimensions of 0.60 mm x 0.30 mm and a height of 0.3 mm, ideal for space-constrained portable electronics such as cellular phones, MP3 players, digital cameras, and other handheld devices. It supports surface mount assembly and is supplied in tape and reel packaging with 10,000 parts per reel. The device is Pb-Free, Halogen Free, and RoHS3 compliant, with MSL Level 1 rating.</p>

<p>The ESD7410N2T5G is an ultra-low capacitance ESD protection diode from onsemi, designed to protect voltage-sensitive components from electrostatic discharge and transient voltage events. It offers a reverse standoff voltage of 8V and a typical clamping voltage of 20V.</p><p>&nbsp;</p><p>With a typical capacitance of only 0.4pF at 1MHz and maximum of 1.0pF, this diode provides excellent signal integrity for high-frequency applications. Insertion loss is 0.1dB at 1GHz and 0.3dB at 3GHz, making it well-suited for RF antenna lines in wireless handsets and terminals.</p><p>&nbsp;</p><p>The device is rated for ESD protection up to ±30kV contact and air discharge per IEC 61000-4-2, and ±8kV per Human Body Model. It is housed in a compact 2-X2DFN (1x0.6mm) surface-mount package and supports operating temperatures from -55°C to +150°C.</p>

<p>The BZX84C33LT3G is a Zener diode from On Semiconductor offering a nominal Zener voltage of 33V with ±6% tolerance. It features a maximum power dissipation of 225mW and a maximum Zener impedance of 80Ω. The forward voltage is typically 900mV at 10mA, and reverse leakage current is 50nA at 23.1V. This diode is designed for surface mount assembly in a SOT-23-3 package, making it suitable for high-density PCB applications. The operating temperature range is -65°C to 150°C. It is commonly used in voltage regulation and overvoltage protection circuits in portable electronics. Compliance with RoHS and REACH is indicated but not verified, and the part is rated MSL 1 (unlimited).</p>

<p>The BZX84C43LT1G is a Zener voltage regulator diode from On Semiconductor's BZX84CxxxLT1G series. It offers a nominal Zener voltage of 43V with a ±7% tolerance, making it suitable for precise voltage regulation in a variety of electronic circuits.</p><p>&nbsp;</p><p>With a maximum power dissipation of 250mW on FR-4 or FR-5 boards, this diode is designed for low-power applications. It features a maximum impedance of 150Ω, a reverse leakage current of 50nA at 30.1V, and a typical forward voltage of 900mV at 10mA. The device is rated for an operating temperature range of -65°C to 150°C (junction) and includes an ESD rating of &gt;16kV (Human Body Model).</p><p>&nbsp;</p><p>The diode is housed in a compact SOT-23-3 surface mount package, ideal for high-density PCB designs. It is supplied in tape and reel packaging with 3000 units per reel, optimized for automated assembly. The component is RoHS3 compliant and lead-free, meeting environmental standards.</p>