On Semiconductor

<p>The 1SS351-TB-E is an RF Schottky diode from On Semiconductor, configured as a 1 pair series connection. It is designed for high-frequency applications requiring fast switching and low forward voltage drop.</p><p>&nbsp;</p><p>Key electrical specifications include a maximum DC reverse voltage of 5V and an average rectified current of 30mA. The diode exhibits a low capacitance of 0.9pF at 0.2V and 1MHz, making it suitable for RF signal detection and mixing circuits.</p><p>&nbsp;</p><p>The device is packaged in a TO-236-3, SC-59, SOT-23-3 compatible 3-CP surface-mount package, supporting standard SMD assembly processes. The operating junction temperature is rated up to 125°C.</p>

<p>The BZX85C15 is a 15V Zener diode from ON Semiconductor designed for voltage regulation and protection in a wide range of electronic circuits. It offers a nominal zener voltage of 15V with a tolerance of ±6%, ensuring predictable and stable operation. The device is rated for a maximum power dissipation of 1W, making it suitable for low to moderate power applications.</p><p>&nbsp;</p><p>Key electrical characteristics include a typical forward voltage of 1.2V at 200mA, a maximum reverse leakage current of 500nA at 10.5V, and a maximum zener impedance of 15Ω. These parameters enable reliable performance in shunt regulation, clamping, and reference voltage circuits.</p><p>&nbsp;</p><p>The BZX85C15 is housed in a DO-204AL (DO-41) axial lead package, designed for through-hole mounting. It supports an operating temperature range of -65°C to 200°C, providing robust performance in demanding environments. The axial leads facilitate easy integration into breadboards and PCBs.</p>

<p>The CM1250-04QG is a low-capacitance ESD protection diode from On Semiconductor, designed to safeguard sensitive electronic circuits from electrostatic discharge (ESD) events. It features four unidirectional channels with a Zener TVS structure, providing robust protection for high-speed data lines.</p><p>&nbsp;</p><p>Key electrical specifications include a reverse standoff voltage of 8.5V, a typical clamping voltage of 6.1V at 5mA (maximum 8.5V), and a low typical leakage current of 0.1 µA at 3.5V. The device offers excellent ESD withstand capability: ±8 kV contact discharge per IEC 61000-4-2 and ±15 kV per MIL-STD-883 Method 3015 (HBM). Channel input capacitance is typically 5 pF at 0V and 3 pF at 2.5V, with differential I/O to GND capacitance of only 0.14 pF, making it suitable for high-speed interfaces.</p><p>&nbsp;</p><p>The CM1250-04QG is housed in a compact 6-UFDFN surface-mount package (6-UDFN 1.45x1), saving board space in space-critical applications. It operates over a temperature range of -40°C to 85°C and is RoHS3 compliant and Pb-Free. The device is supplied in tape and reel packaging with a standard quantity of 3000 units.</p>

<p>The ESD7551N2T5G is a Zener-type TVS diode designed for ESD protection in high-speed circuits. It features a reverse standoff voltage of 3.3V and a maximum clamping voltage of 13V. The device offers ultra-low capacitance of 0.25pF typical (0.35pF max) at 1MHz, making it ideal for high-frequency applications such as USB 2.0 and antenna line protection.</p><p>&nbsp;</p><p>This diode provides ±25kV ESD protection per IEC 61000-4-2 (contact and air) and has a response time of less than 1ns with low dynamic resistance below 1Ω. It is housed in a compact 2-X2DFN (1x0.6mm) surface mount package and operates over a junction temperature range of -55°C to 150°C.</p><p>&nbsp;</p><p>Designed for general purpose use, the device supports single bidirectional channel protection and is not intended for power line protection. Power dissipation is 250mW on FR-5 board at 25°C. The part is RoHS compliant, Pb-Free, and Halogen Free.</p>