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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 35 V | Non-Inverting | 0.8V, 1V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 8ns | 10-DFN (3x3) | 4.5V ~ 5.5V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | - | 2 | -40°C ~ 125°C (TJ) | 11ns, 11ns | - | 4.5V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Analog Devices Inc./Maxim Integrated
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 20ns, 20ns | 8-SOIC | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Single | 1.3A, 7.6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 82ns, 12.5ns | 6-TDFN (3x3) | 4V ~ 12.6V | |
Analog Devices Inc./Maxim Integrated
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Single | 1.3A, 7.6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 82ns, 12.5ns | SOT-6 | 4V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Single | 1.3A, 7.6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 82ns, 12.5ns | 6-TDFN (3x3) | 4V ~ 12.6V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-TDFN (3x3) | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-TDFN (3x3) | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 12-TQFN (4x4) | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 12-TQFN (4x4) | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 12-TQFN (4x4) | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 12-TQFN (4x4) | 8V ~ 12.6V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-uMAX-EP|8-uSOP-EP | 4.5V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-uMAX-EP|8-uSOP-EP | 4.5V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-uMAX-EP|8-uSOP-EP | 4.5V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-uMAX-EP|8-uSOP-EP | 4.5V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-uMAX-EP|8-uSOP-EP | 4.5V ~ 15V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 14-TSSOP-EP | 4.5V ~ 15V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -10°C ~ 125°C (TJ) | 8ns, 8ns | 8-DFN (2x2) | 4.5V ~ 5.5V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 14-TSSOP-EP | 4.5V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Single | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 1 | -40°C ~ 125°C (TA) | 32ns, 26ns | 6-TDFN (3x3) | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Single | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 6-TDFN (3x3) | 4V ~ 15V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
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Infineon Technologies
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Single | 1A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 2V, 2.25V | Surface Mount | 1 | -25°C ~ 125°C (TJ) | 20ns, 10ns | 8-SOIC | 11V ~ 19V | |
IXYS
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 30V | |
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IXYS
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 30V | |
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IXYS
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 30V | |
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IXYS
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 30V | |
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IXYS
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 30V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-DFN (2x2) | 4.5V ~ 5.5V | |
Diodes Incorporated
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Single | 2A, 5A | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9840ns, 78ns | SM8 | 5V ~ 15V | |
IXYS
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Independent | 2A, 2A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 9.4ns, 9.7ns | 16-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 5.25V ~ 16V | |
Microchip Technology
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Independent | 1.5A, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 10-TDFN (2.5x2.5) | 5.25V ~ 16V | |
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STMicroelectronics
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Synchronous | 2A, - | Half-Bridge | N-Channel MOSFET | 41 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | - | 8-VFDFPN (3x3) | 5V ~ 12V | |
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STMicroelectronics
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Synchronous | 3.5A, - | Half-Bridge | N-Channel MOSFET | 41 V | Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | - | 8-VFDFPN (3x3) | 5V ~ 12V | |
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Renesas
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
IXYS
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Synchronous | 1.4A, 1.8A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 14ns | 14-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 5.5V ~ 16V | |
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Microchip Technology
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 10-TDFN (2.5x2.5) | 5.5V ~ 16V | |
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Microchip Technology
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 5.5V ~ 16V | |
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Microchip Technology
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 10-TDFN (2.5x2.5) | 5.5V ~ 16V | |
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Infineon Technologies
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.9V, 2.7V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 1µs, 1µs | PG-DSO-8-904 | 6V ~ 36V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.8V, 4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 10ns | 9-TDFN (4x4) | 8V ~ 14V | |
IXYS
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Synchronous | 1.4A, 1.8A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 23ns, 14ns | 14-DIP | 10V ~ 20V | |
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IXYS
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Synchronous | 1.4A, 1.8A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 14ns | 14-SOIC | 10V ~ 20V | |
ROHM Semiconductor
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Independent | 600mA, 600mA | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 2 | -25°C ~ 150°C (TJ) | - | 16-SSOP-B | 10V ~ 25V | |
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ROHM Semiconductor
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Independent | 600mA, 600mA | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 3 | -25°C ~ 150°C (TJ) | - | 16-SSOP-B | 10V ~ 25V | |
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IXYS
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Independent | 2A, 4A | Low-Side | IGBT | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | -, 8ns | 16-SOIC | -10V ~ 25V | |
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IXYS
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Independent | 2A, 4A | Low-Side | IGBT | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | -, 8ns | 16-SOIC | -10V ~ 25V | |
On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 35 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 11ns | 8-DFN (2x2) | 4.5V ~ 13.2V | |
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On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 35 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 11ns | 8-DFN (2x2) | 4.5V ~ 13.2V | |
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On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 35 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 11ns | 8-DFN (2x2) | 4.5V ~ 13.2V | |
Microchip Technology
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Synchronous | 1A, 1A | Full-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 16-QFN (4x4) | 5.25V ~ 16V | |
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Microchip Technology
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Independent | 1A, 1A | Full-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 16-QFN (4x4) | 5.25V ~ 16V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 20ns, 20ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | -55°C ~ 125°C (TA) | 25ns, 25ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 25ns, 20ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 20ns, 20ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 20ns, 20ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 25ns, 20ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 25ns, 20ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 25ns, 25ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 25ns, 25ns | 8-CERDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 25ns, 25ns | 8-CERDIP | 4.5V ~ 18V | |
Microchip Technology
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | - | 4-TQFN (1.2x1.2) | 2.7V ~ 9V | |
STMicroelectronics
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 45ns, 35ns | 8-MSOP-EP | 5V ~ 18V | |
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Semtech
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Independent | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-MSOP | 4.5V ~ 16.5V | |
Semtech
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Independent | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16.5V | |
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Semtech
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Independent | 2A, 2A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16.5V | |
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Semtech
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Independent | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16.5V | |
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Semtech
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Independent | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16.5V | |
Semtech
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 40 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 15ns, 10ns | 20-TSSOP | 9V ~ 15V |
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