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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 3ns, 3ns | 10-TDFN-EP (3x3) | 4.5V ~ 28V | |
Intersil
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 14ns, 17ns | 8-PDIP | 4.5V ~ 18V | |
Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount, Wettable Flank | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
STMicroelectronics
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Single | 1.3A, 1.7A | High-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 4.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 100ns, 100ns (Max) | 8-SOIC | 12V ~ 26V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 28-SOIC | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | 3A, 7A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 6ns, 4ns | SOT-23-6 | 4V ~ 14V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC-EP | 4.5V ~ 18V | |
Renesas
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3-Phase | 1A, 2A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 3 | -40°C ~ 125°C (TA) | 40ns, 40ns | 48-QFN (7x7) | 4.5V ~ 60V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 18ns, 14ns | 12-MSOP-EP | 5V ~ 14V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 9.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Single | 4A, 8A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 3ns, 3ns | 10-TDFN-EP (3x3) | 4.5V ~ 28V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 150°C (TJ) | 23ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.4V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 28-SOIC | 10V ~ 20V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 28-SOIC | 12V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Through Hole | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 28-PDIP | 10V ~ 20V | |
Power Integrations
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Independent | 8A, 15A | Half-Bridge | IGBT | 1200 V | - | - | Surface Mount | 2 | -20°C ~ 85°C (TA) | 5ns, 10ns | Module | 14.5V ~ 15.5V | |
Tamura
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Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
Renesas
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 18ns, 14ns | 12-MSOP-EP | 5V ~ 14V | |
Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 9V ~ 20V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 4 | 0°C ~ 70°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 4 | 0°C ~ 70°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 4 | -40°C ~ 85°C (TA) | 14ns, 13ns | 14-DIP | 4.5V ~ 18V | |
Trinamic Motion Control GmbH
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3-Phase | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 1.65V, 3.85V | Surface Mount | 6 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 37-QFN-EP (7x7) | 10V ~ 60V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | High-Side or Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 1.7V, 2.2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 16ns | 8-SO | 4.5V ~ 13.2V | |
Intersil
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Synchronous | 4A, 4A | High-Side or Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.6V, 2.4V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 4ns, 4ns | 8-PDIP | 4.5V ~ 16V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 44-PLCC, 32 Leads (16.51x16.51) | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 13ns, 8ns | 10-MSOP-EP | 5V ~ 25V | |
Analog Devices Inc./Maxim Integrated
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Single | -50mA, 300mA | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 10-MSOP | 3V ~ 42V | |
Tamura
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Analog Devices Inc./Maxim Integrated
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Single | 1.1A, 1.1A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.2V, 1.6V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 7ns | 8-MSOP-EP | 4V ~ 15V | |
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Renesas
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Renesas
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Renesas
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Renesas
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Independent | - | High-Side or Low-Side | N-Channel MOSFET | 25 V | TTL | 0.8V, 2.6V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 40-QFN (6x6) | 4.5V ~ 16V | |
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Analog Devices Inc./Maxim Integrated
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Single | 3A, 7A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 6ns, 4ns | SOT-23-6 | 6V ~ 14V | |
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Renesas
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Renesas
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Analog Devices Inc./Maxim Integrated
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Synchronous | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SO | 4.5V ~ 11V | |
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Renesas
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Renesas
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Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 14-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Independent | 2A, 2A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 14-PDIP | 3.3V ~ 20V | |
Infineon Technologies
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Independent | 2A, 2A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 16-SOIC | 3.3V ~ 20V | |
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Infineon Technologies
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Synchronous | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 8.3V, 12.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 8.3V, 12.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 16-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 16-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 6V, 9.5V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 10V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Single | 130mA, 130mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 250ns, 250ns | 8-PDIP | 13V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 12V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 12V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 12V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 12V ~ 20V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 28-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Through Hole | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 28-PDIP | 10V ~ 20V | |
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Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 28-SOIC | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Through Hole | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 28-PDIP | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 28-SOIC | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Through Hole | 6 | 125°C (TJ) | 90ns, 40ns | 28-PDIP | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | 125°C (TJ) | 90ns, 40ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Through Hole | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 28-PDIP | 11.5V ~ 20V | |
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 44-PLCC, 32 Leads (16.58x16.58) | 11.5V ~ 20V | |
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 80ns, 45ns | 8-SOIC | 10V ~ 15.6V | |
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Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 28-SOIC | 11.5V ~ 20V | |
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Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
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3-Phase | - | Half-Bridge | IGBT | 600 V | Inverting | - | Surface Mount | 3 | -40°C ~ 150°C (TJ) | 115ns, 25ns | 68-PLCC (24.23x24.23) | 12.5V ~ 20V | |
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3-Phase | - | Half-Bridge | IGBT | 600 V | Inverting | - | Surface Mount | 3 | -40°C ~ 150°C (TJ) | 115ns, 25ns | 64-MQFP (20x14) | 12.5V ~ 20V | |
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Infineon Technologies
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Synchronous | 125mA, 250mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 125mA, 250mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Through Hole | 2 | -40°C ~ 125°C (TJ) | 80ns, 45ns | 8-PDIP | 10V ~ 15.6V | |
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Infineon Technologies
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 80ns, 45ns | 8-SOIC | 10V ~ 15.6V | |
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Infineon Technologies
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Synchronous | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | RC Input Circuit | - | Through Hole | 2 | -40°C ~ 150°C (TJ) | 80ns, 45ns | 8-PDIP | 10V ~ 20V | |
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Independent | 2A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 1200 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -55°C ~ 150°C (TJ) | 25ns, 17ns | 14-DIP | 12V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 1200 V | Inverting | 0.8V, 2V | Through Hole | 6 | 125°C (TJ) | 90ns, 40ns | 28-PDIP | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 1200 V | Inverting | 0.8V, 2V | Surface Mount | 6 | 125°C (TJ) | 90ns, 40ns | 28-SOIC | 10V ~ 20V | |
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Independent | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 14-DIP | 10V ~ 20V | |
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Independent | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 14-SOIC | 10V ~ 20V | |
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Independent | 2A, 2A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 16-PDIP | 3.3V ~ 20V | |
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Independent | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 14-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 16-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 2A, 2A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 14-PDIP | 3.3V ~ 20V | |
Infineon Technologies
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Independent | 2A, 2A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 16-PDIP | 3.3V ~ 20V | |
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Infineon Technologies
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Synchronous | 125mA, 250mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | RC Input Circuit | - | Through Hole | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 125mA, 250mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Synchronous | - | Half-Bridge | IGBT | 600 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | - | - | 13V ~ 20V |
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