What are Gate Drivers ?
Gate Drivers are integrated circuits designed to control the switching of power transistors, ensuring efficient operation in electronic circuits. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Channel Type, which affects compatibility with the load; Current, which determines the drive capability; and Input Type, which influences the control signal requirements. It's crucial for procurement teams to validate lifecycle status and consider alternate-source options to mitigate sourcing risks.
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| Part & Mfr | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 500mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3.5V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 25ns, 15ns | 20-SOIC | 10V ~ 20V | |
IXYS
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.4V | Surface Mount | 3 | 150°C (TJ) | 90ns, 35ns | 28-SOIC | 10V ~ 20V | |
Infineon Technologies
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.7V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 40ns, 20ns | 14-DIP | 10V ~ 20V | |
Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
Texas Instruments
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Independent | 3A, 3A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 140°C (TJ) | 8ns, 7ns | 8-VSON (4x4) | 8V ~ 17V | |
Texas Instruments
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Independent | 3A, 3A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 3V, 8V | Surface Mount | 2 | -40°C ~ 140°C (TJ) | 8ns, 7ns | 8-VSON (4x4) | 8V ~ 17V | |
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Power Integrations
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- | 35A, 35A | High-Side or Low-Side | IGBT | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 9ns, 30ns | Module | 14.5V ~ 15.5V | |
Analog Devices / Maxim Integrated
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Independent | 2A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 3ns, 3ns | 10-TDFN-EP (3x3) | 4.5V ~ 28V | |
Intersil
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 14ns, 17ns | 8-PDIP | 4.5V ~ 18V | |
Monolithic Power Systems
|
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount, Wettable Flank | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
STMicroelectronics
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Single | 1.3A, 1.7A | High-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 4.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 100ns, 100ns (Max) | 8-SOIC | 12V ~ 26V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 28-SOIC | 10V ~ 20V | |
Analog Devices / Maxim Integrated
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Single | 3A, 7A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 6ns, 4ns | SOT-23-6 | 4V ~ 14V | |
Analog Devices / Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC-EP | 4.5V ~ 18V | |
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Power Integrations
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Renesas
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3-Phase | 1A, 2A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 3 | -40°C ~ 125°C (TA) | 40ns, 40ns | 48-QFN (7x7) | 4.5V ~ 60V | |
Analog Devices / Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 18ns, 14ns | 12-MSOP-EP | 5V ~ 14V | |
Analog Devices / Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 9.5V ~ 18V | |
Analog Devices / Maxim Integrated
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Single | 4A, 8A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 3ns, 3ns | 10-TDFN-EP (3x3) | 4.5V ~ 28V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 150°C (TJ) | 23ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-PDIP | 4.5V ~ 18V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.4V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 28-SOIC | 10V ~ 20V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 28-SOIC | 12V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Through Hole | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 28-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Analog Devices / Maxim Integrated
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Single | -50mA, 300mA | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 10-MSOP | 3V ~ 42V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
Renesas
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Analog Devices / Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 18ns, 14ns | 12-MSOP-EP | 5V ~ 14V | |
Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 9V ~ 20V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 4 | 0°C ~ 70°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 4 | 0°C ~ 70°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
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Trinamic Motion Control GmbH
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3-Phase | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 1.65V, 3.85V | Surface Mount | 6 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 37-QFN-EP (7x7) | 10V ~ 60V | |
Analog Devices / Maxim Integrated
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Independent | 1.5A, 1.5A | High-Side or Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 1.7V, 2.2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 16ns | 8-SO | 4.5V ~ 13.2V | |
Intersil
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Synchronous | 4A, 4A | High-Side or Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.6V, 2.4V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 4ns, 4ns | 8-PDIP | 4.5V ~ 16V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 44-PLCC, 32 Leads (16.51x16.51) | 10V ~ 20V | |
Analog Devices / Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 13ns, 8ns | 10-MSOP-EP | 5V ~ 25V | |
Renesas
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Analog Devices / Maxim Integrated
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Single | 1.1A, 1.1A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.2V, 1.6V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 7ns | 8-MSOP-EP | 4V ~ 15V | |
Renesas
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Renesas
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Renesas
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Renesas
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Independent | - | High-Side or Low-Side | N-Channel MOSFET | 25 V | TTL | 0.8V, 2.6V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 40-QFN (6x6) | 4.5V ~ 16V |
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