What are Gate Drivers ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS
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Single | 95A, 95A | Low-Side | N-Channel MOSFET | 500 V | Non-Inverting | 0.8V, 3.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 3.4ns, 1.65ns | 10-SMD | 8V ~ 18V | |
Diodes Incorporated
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SO | 10V ~ 20V | |
Diodes Incorporated
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SO | 10V ~ 20V | |
Diodes Incorporated
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Independent | 1.5A, 2A | Half-Bridge | N-Channel MOSFET | 50 V | CMOS/TTL | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 23ns, 18ns | W-DFN3030-10 | 8V ~ 14V | |
Analog Devices Inc./Maxim Integrated
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IXYS
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Independent | 5A, 5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7ns, 7ns | 8-SOIC-EP | 5V ~ 20V | |
On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel, P-Channel MOSFET | 35 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 11ns | 8-DFN (2x2) | 4.5V ~ 13.2V | |
STMicroelectronics
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Single | 500mA, 500mA | High-Side | N-Channel MOSFET | 300 V | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 100ns, 100ns | 8-SOIC | 10V ~ 18V | |
STMicroelectronics
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Single | 500mA, 500mA | High-Side | N-Channel MOSFET | 300 V | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 100ns, 100ns | 8-SOIC | 10V ~ 18V | |
STMicroelectronics
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- | - | - | - | - | - | - | Surface Mount | - | - | - | 8-SOIC | - | |
On Semiconductor
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Infineon Technologies
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 9-QFN (3x3) | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 10-QFN (4x4) | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 9-QFN (3x3) | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 10-QFN (4x4) | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-SOIC | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-SOICE | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 12ns | 8-SOIC | 4.5V ~ 18V | |
Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C | 15ns, 12ns | 8-SOIC | 9V ~ 16V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-SOIC | 9V ~ 12V | |
On Semiconductor
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On Semiconductor
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Infineon Technologies
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 6.4ns, 5.4ns | PG-TSSOP-8 | 4.5V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | Half-Bridge | N-Channel MOSFET | - | Inverting | 0.8V, 2V | Through Hole | 2 | -55°C ~ 125°C | 20ns, 20ns | 8-CERDIP | 4.5V ~ 17V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | Low-Side | - | - | CMOS/TTL | 0.8V, 2.4V | Through Hole | 2 | -55°C ~ 125°C (TA) | 60ns, 40ns | 8-CERDIP | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -55°C ~ 125°C (TA) | 25ns, 25ns | 8-CERDIP | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -55°C ~ 125°C (TA) | 25ns, 25ns | 8-CERDIP | 4.5V ~ 18V | |
Diodes Incorporated
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.4V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 90ns, 35ns | 28-SO | 10V ~ 20V | |
Infineon Technologies
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Single | 4A, 8A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting, Non-Inverting | 1.2V, 1.9V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | PG-SOT23-6-2 | 4.5V ~ 20V | |
Infineon Technologies
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Single | 4A, 8A | Half-Bridge, Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 1.2V, 1.9V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 6.5ns, 4.5ns | PG-SOT23-6-2 | 4.5V ~ 20V | |
Infineon Technologies
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Infineon Technologies
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Infineon Technologies
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 33ns, 33ns (Max) | PG-DSO-8-9 | 5V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | N-Channel MOSFET | 200 V | Non-Inverting | 0.7V, 2.5V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 100ns, 35ns | 28-SOIC | 24V ~ 150V | |
On Semiconductor
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Diodes Incorporated
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Synchronous | 1.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 50 V | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 17ns, 12ns | W-DFN3030-10 | 8V ~ 14V | |
Diodes Incorporated
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.6V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 100ns, 35ns | 14-SO | 10V ~ 20V | |
On Semiconductor
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Synchronous | 2.5A, 1.6A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.7V, 3.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 30ns, 27ns | 8-DFN (3x3) | 4.5V ~ 13.2V | |
pSemi
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Synchronous | 2A, 4A | Half-Bridge | N-Channel MOSFET | 100 V | Inverting | 0.6V, 1.6V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 900ps, 900ps | Die | 4V ~ 6V | |
Diodes Incorporated
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Synchronous | 1.5A, 2A | Half-Bridge | N-Channel MOSFET | 50 V | CMOS/TTL | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 16ns, 12ns | W-DFN3030-10 | 0.3V ~ 60V | |
STMicroelectronics
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Independent | 2A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
STMicroelectronics
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Independent | 2A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
STMicroelectronics
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Independent | 2A, 2.5A | High-Side or Low-Side | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
STMicroelectronics
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Independent | 2A, 2.5A | High-Side or Low-Side | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
Power Integrations
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- | 48A, 48A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Through Hole | 1 | -40°C ~ 85°C (TA) | - | Module | 15V | |
Power Integrations
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- | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Through Hole | 2 | -40°C ~ 85°C (TA) | - | Module | 15V | |
Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V |