What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology
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25A (Tc) | 700 V | 20V | - | N-Channel | 38 nC @ 20 V | 785 pF @ 700 V | Surface Mount | -55°C ~ 175°C (TJ) | 91W (Tc) | 115mOhm @ 15A, 20V | TO-268 | SiCFET (Silicon Carbide) | +23V, -10V | 2.4V @ 750µA | |
IXYS
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230A (Tc) | 75 V | 10V | - | N-Channel | 178 nC @ 10 V | 10500 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 480W (Tc) | 4.2mOhm @ 50A, 10V | TO-263-7 (IXTA) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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19A (Ta), 114A (Tc) | 100 V | 10V | - | N-Channel | 120 nC @ 10 V | 5660 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.3W (Ta), 100W (Tc) | 4.4mOhm @ 68A, 10V | DIRECTFET L8 | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
Microchip Technology
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30A (Tc) | 500 V | 10V | - | N-Channel | 115 nC @ 10 V | 4525 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 415W (Tc) | 190mOhm @ 14A, 10V | D3Pak | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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130A (Tc) | 150 V | 10V | - | N-Channel | 80 nC @ 10 V | 5230 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 390W (Tc) | 9mOhm @ 65A, 10V | TO-263 (D2Pak) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 1.5mA | |
IXYS
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20A (Tc) | 650 V | 10V | - | N-Channel | 35 nC @ 10 V | 1390 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 210mOhm @ 10A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
IXYS
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3A (Tc) | 1200 V | 10V | - | N-Channel | 39 nC @ 10 V | 1050 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 200W (Tc) | 4.5Ohm @ 1.5A, 10V | TO-263AA (IXFA) | MOSFET (Metal Oxide) | ±20V | 5V @ 1.5mA | |
IXYS
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3A (Tc) | 1200 V | 10V | - | N-Channel | 39 nC @ 10 V | 1050 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 200W (Tc) | 4.5Ohm @ 1.5A, 10V | TO-263 (D2Pak) | MOSFET (Metal Oxide) | ±20V | 5V @ 1.5mA | |
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24A (Tc) | 500 V | 10V | - | N-Channel | 160 nC @ 10 V | 4200 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 230mOhm @ 12A, 10V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ±20V | 4V @ 4mA | |
IXYS
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22A (Tc) | 500 V | 10V | - | N-Channel | 50 nC @ 10 V | 2630 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 350W (Tc) | 270mOhm @ 11A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
IXYS
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18A (Tc) | 600 V | 10V | - | N-Channel | 35 nC @ 10 V | 1440 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 320W (Tc) | 230mOhm @ 9A, 10V | TO-263AA (IXFA) | MOSFET (Metal Oxide) | ±30V | 4.5V @ 1.5mA | |
Infineon Technologies
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- | 650 V | 18V | - | - | - | - | Surface Mount | - | - | - | PG-HSOF-8-1 | SiCFET (Silicon Carbide) | - | - | |
Microchip Technology
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8A (Tc) | 1200 V | 10V | - | N-Channel | 80 nC @ 10 V | 2565 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 335W (Tc) | 2.1Ohm @ 3A, 10V | D3Pak | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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300A (Tc) | 40 V | 10V | - | N-Channel | 145 nC @ 10 V | 10700 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 480W (Tc) | 2.5mOhm @ 50A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
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6A (Tc) | 1200 V | 10V | - | N-Channel | 92 nC @ 10 V | 2830 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 250W (Tc) | 2.4Ohm @ 500mA, 10V | TO-263AA (IXFA) | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
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14A (Tc) | 800 V | 10V | - | N-Channel | 61 nC @ 10 V | 3900 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 400W (Tc) | 720mOhm @ 500mA, 10V | TO-268AA | MOSFET (Metal Oxide) | ±30V | 5.5V @ 4mA | |
IXYS
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200mA (Tc) | 500 V | 10V | Depletion Mode | N-Channel | - | 120 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1.1W (Ta), 25W (Tc) | 30Ohm @ 50mA, 0V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 5V @ 25µA | |
ALPHA & OMEGA SEMICONDU CTOR
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70A (Tc) | 600 V | 10V | - | N-Channel | 175 nC @ 10 V | 9320 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 40mOhm @ 25A, 10V | TO-247 | MOSFET (Metal Oxide) | ±20V | 3.6V @ 250µA | |
ROHM Semiconductor
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20A (Ta) | 600 V | 10V | - | N-Channel | 65 nC @ 10 V | 2040 pF @ 25 V | Through Hole | 150°C (TJ) | 50W (Tc) | 220mOhm @ 10A, 10V | TO-220FM | MOSFET (Metal Oxide) | ±30V | 4.5V @ 1mA | |
ROHM Semiconductor
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20A (Tc) | 600 V | 15V | - | N-Channel | 45 nC @ 15 V | 1500 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 76W (Tc) | 234mOhm @ 10A, 15V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 7V @ 3.5mA | |
ROHM Semiconductor
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16A (Ta) | 500 V | 10V | - | N-Channel | 46 nC @ 10 V | 1700 pF @ 25 V | Through Hole | 150°C (TJ) | 50W (Tc) | 325mOhm @ 8A, 10V | TO-220FM | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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22A (Tc) | 600 V | 10V | - | N-Channel | 58 nC @ 10 V | 3600 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 400W (Tc) | 350mOhm @ 11A, 10V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ±30V | 5.5V @ 4mA | |
Microchip Technology
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18A (Tc) | 800 V | 10V | - | N-Channel | 122 nC @ 10 V | 3757 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 580mOhm @ 9A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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34A (Tc) | 650 V | 10V | - | N-Channel | 56 nC @ 10 V | 3230 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 40W (Tc) | 100mOhm @ 17A, 10V | TO-220 Isolated Tab | MOSFET (Metal Oxide) | ±30V | 5V @ 1.5mA | |
IXYS
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18A (Tc) | 600 V | 10V | - | N-Channel | 35 nC @ 10 V | 1440 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 230mOhm @ 9A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 4.5V @ 1.5mA | |
IXYS
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42A (Tc) | 500 V | 10V | - | N-Channel | 88 nC @ 10 V | 5400 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 830W (Tc) | 145mOhm @ 500mA, 10V | TO-3P | MOSFET (Metal Oxide) | ±30V | 4.5V @ 250µA | |
IXYS
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1.83A (Tc) | 1500 V | 10V | - | N-Channel | 38.6 nC @ 10 V | 1375 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 73W (Tc) | 7.3Ohm @ 1.5A, 10V | TO-3PFP | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
IXYS
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86A (Tc) | 250 V | 10V | - | N-Channel | 105 nC @ 10 V | 5330 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 540W (Ta) | 37mOhm @ 43A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Infineon Technologies
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- | 650 V | 18V | - | - | - | - | Surface Mount | - | - | - | PG-HSOF-8-1 | SiCFET (Silicon Carbide) | - | - | |
Vishay
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60A (Tc) | 600 V | 10V | - | N-Channel | 410 nC @ 10 V | 5348 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 417W (Tc) | 41mOhm @ 35A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
IXYS
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21A (Tc) | 500 V | 10V | - | N-Channel | 190 nC @ 10 V | 4200 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 250mOhm @ 10.5A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
IXYS
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3A (Tc) | 1500 V | 10V | - | N-Channel | 38.6 nC @ 10 V | 1375 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 250W (Tc) | 7.3Ohm @ 1.5A, 10V | TO-263HV | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
IXYS
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30A (Tc) | 600 V | 10V | - | N-Channel | 56 nC @ 10 V | 2270 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 155mOhm @ 15A, 10V | TO-3P | MOSFET (Metal Oxide) | ±30V | 4.5V @ 4mA | |
Toshiba
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35A (Ta) | 650 V | 10V | - | N-Channel | 115 nC @ 10 V | 4100 pF @ 300 V | Through Hole | 150°C (TJ) | 270W (Tc) | 95mOhm @ 17.5A, 10V | TO-247 | MOSFET (Metal Oxide) | ±30V | 4.5V @ 2.1mA | |
IXYS
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140A (Tc) | 100 V | 10V, 15V | - | N-Channel | 155 nC @ 10 V | 4700 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 600W (Tc) | 11mOhm @ 70A, 10V | TO-268 | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
IXYS
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96A (Tc) | 200 V | 10V | - | N-Channel | 145 nC @ 10 V | 4800 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 600W (Tc) | 24mOhm @ 48A, 10V | TO-268 | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
ROHM Semiconductor
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25A (Tc) | 600 V | 15V | - | N-Channel | 57 nC @ 15 V | 1900 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 85W (Tc) | 182mOhm @ 12.5A, 15V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 7V @ 4.5mA | |
Microchip Technology
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37A (Tc) | 500 V | 10V | - | N-Channel | 145 nC @ 10 V | 5710 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 520W (Tc) | 150mOhm @ 18A, 10V | D3Pak | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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9A (Tc) | 650 V | 10V | - | N-Channel | 35 nC @ 10 V | 1390 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 63W (Tc) | 210mOhm @ 10A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
Toshiba
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38A (Ta) | 650 V | 10V | - | N-Channel | 62 nC @ 10 V | 3650 pF @ 300 V | Through Hole | 150°C | 270W (Tc) | 65mOhm @ 19A, 10V | TO-247-4L(T) | MOSFET (Metal Oxide) | ±30V | 4V @ 1.69mA | |
STMicroelectronics
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68A (Tc) | 600 V | 10V | - | N-Channel | 118 nC @ 10 V | 5200 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 450W (Tc) | 40mOhm @ 34A, 10V | TO-247-4 | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
Microchip Technology
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22A (Tc) | 500 V | 10V | - | N-Channel | 43 nC @ 10 V | 1900 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 265W (Tc) | 240mOhm @ 11A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Vishay
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70A (Tc) | 600 V | 10V | - | N-Channel | 380 nC @ 10 V | 7500 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 520W (Tc) | 38mOhm @ 35A, 10V | TO-247AD | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Toshiba
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30.8A (Ta) | 600 V | 10V | - | N-Channel | 105 nC @ 10 V | 3000 pF @ 300 V | Through Hole | 150°C (TJ) | 230W (Tc) | 88mOhm @ 15.4A, 10V | TO-3P(N) | MOSFET (Metal Oxide) | ±30V | 3.7V @ 1.5mA | |
IXYS
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7A (Tc) | 1000 V | 10V | - | N-Channel | 47 nC @ 10 V | 2590 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 1.9Ohm @ 3.5A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 6V @ 1mA | |
IXYS
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
Infineon Technologies
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10A (Tc) | 600 V | - | - | N-Channel | - | 157 pF @ 400 V | Surface Mount | -55°C ~ 150°C (TJ) | 62.5W (Tc) | - | PG-LSON-8-1 | GaNFET (Gallium Nitride) | -10V | 1.6V @ 960µA | |
Microchip Technology
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22A (Tc) | 500 V | - | - | N-Channel | 43 nC @ 10 V | 1900 pF @ 25 V | Through Hole | - | - | 240mOhm @ 11A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
STMicroelectronics
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60A (Tc) | 650 V | 10V | - | N-Channel | 120 nC @ 10 V | 5500 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 446W (Tc) | 50mOhm @ 30A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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70A (Tc) | 600 V | 10V | - | N-Channel | 175 nC @ 10 V | 9165 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 42mOhm @ 25A, 10V | TO-247 | MOSFET (Metal Oxide) | ±20V | 4.2V @ 250µA |