What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Avalanche Current | Continuous Drain Current | Continuous Drain Current (Id) | Current | Drain to Source Voltage (Vdss) | Drive Voltage | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) | Gate Charge (Qg) (Max) @ Vgs | Gate Threshold Voltage (Vgs(th)) | Gate Threshold Voltage (Vgs(th)) (Max) @ Id | Gate-Source Voltage (Vgs) | Halogen Free | Input Capacitance (Ciss) | Input Capacitance (Ciss) (Max) @ Vds | Lead Spacing | Mounting Type | On-Resistance (Rds On) | Operating Temperature | Power Dissipation (Max) | Pulsed Drain Current | Rds On (Max) @ Id, Vgs | Storage Temperature | Supplier Device Package | Tape & Reel | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
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Renesas
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Nexperia USA Inc.
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- | - | - | 74A (Tc) | 80 V | - | 10V | - | N-Channel | - | 43 nC @ 10 V | - | - | - | - | - | 2782 pF @ 12 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 148W (Tc) | - | 11mOhm @ 15A, 10V | - | TO-220AB | - | MOSFET (Metal Oxide) | ±20V | 4V @ 1mA | |
Renesas
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Renesas
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Renesas
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Renesas
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Infineon Technologies
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- | - | - | 11A (Tc) | 600 V | - | 10V | - | N-Channel | - | 41.5 nC @ 10 V | - | - | - | - | - | 1460 pF @ 25 V | - | Surface Mount | - | -55°C ~ 150°C (TJ) | 125W (Tc) | - | 380mOhm @ 7A, 10V | - | PG-TO263-3-2 | - | MOSFET (Metal Oxide) | ±20V | 5.5V @ 500µA | |
Infineon Technologies
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- | - | - | 14A (Tc) | 650 V | - | 10V | - | N-Channel | - | 23 nC @ 10 V | - | - | - | - | - | 1044 pF @ 400 V | - | Surface Mount | - | -40°C ~ 150°C (TJ) | 81W (Tc) | - | 200mOhm @ 5.2A, 10V | - | PG-VSON-4 | - | MOSFET (Metal Oxide) | ±20V | 4.5V @ 260µA | |
Taiwan Semiconductor
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- | - | - | 16A (Ta), 104A (Tc) | 60 V | - | 10V | - | N-Channel | - | 104 nC @ 10 V | - | - | - | - | - | 6870 pF @ 30 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 3.1W (Ta), 136W (Tc) | - | 5mOhm @ 16A, 10V | - | 8-PDFN (5.2x5.75) | - | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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Vishay Dale
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- | - | - | 296A (Tc) | 100 V | - | 10V | - | N-Channel | - | 272 nC @ 10 V | - | - | - | - | - | 15945 pF @ 25 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 600W (Tc) | - | 2.53mOhm @ 20A, 10V | - | PowerPAK® 8 x 8 | - | MOSFET (Metal Oxide) | ±20V | 3.5V @ 250µA | |
Renesas
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- | - | - | 33A (Ta) | 30 V | - | - | - | N-Channel | - | 64 nC @ 5 V | - | - | - | - | - | 8100 pF @ 10 V | - | Surface Mount | - | - | - | - | 2.5mOhm @ 17A, 10V | - | 8-DFN3333 (3.3x3.3) | - | MOSFET (Metal Oxide) | - | 2.5V @ 1mA | |
Renesas
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Renesas
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Infineon Technologies
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- | - | - | 100A (Tc) | 80 V | - | 6V, 10V | - | N-Channel | - | 206 nC @ 10 V | - | - | - | - | - | 14200 pF @ 40 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 300W (Tc) | - | 2.8mOhm @ 100A, 10V | - | PG-TO220-3-1 | - | MOSFET (Metal Oxide) | ±20V | 3.5V @ 270µA | |
On Semiconductor
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- | - | - | 10A (Tc) | 600 V | - | 10V | - | N-Channel | - | 57 nC @ 10 V | - | - | - | - | - | 2040 pF @ 25 V | - | Through Hole | - | -55°C ~ 150°C (TJ) | 192W (Tc) | - | 730mOhm @ 5A, 10V | - | TO-3P | - | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Renesas
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Infineon Technologies
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- | - | - | 13.3A (Tc) | 950 V | - | 10V | - | N-Channel | - | 43 nC @ 10 V | - | - | - | - | - | 1230 pF @ 400 V | - | Surface Mount | - | -55°C ~ 150°C (TJ) | 104W (Tc) | - | 450mOhm @ 7.2A, 10V | - | PG-TO263-3-2 | - | MOSFET (Metal Oxide) | ±20V | 3.5V @ 360µA | |
Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Infineon Technologies
|
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- | - | - | 170A (Tj) | 100 V | - | 6V, 10V | - | N-Channel | - | 88 nC @ 10 V | - | - | - | - | - | 6405 pF @ 50 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 197W (Tc) | - | 3.1mOhm @ 85A, 10V | - | PG-HSOF-5-4 | - | MOSFET (Metal Oxide) | ±20V | 3.8V @ 110µA | |
Infineon Technologies
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- | - | - | 48A (Ta), 381A (Tc) | 40 V | - | 4.5V, 10V | - | N-Channel | - | 118 nC @ 10 V | - | - | - | - | - | 8400 pF @ 20 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 3W (Ta), 188W (Tc) | - | 0.7mOhm @ 50A, 10V | - | PG-TDSON-8 FL | - | MOSFET (Metal Oxide) | ±20V | 2.3V @ 250µA | |
Infineon Technologies
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- | - | - | 56A (Tc) | 100 V | - | 10V | - | N-Channel | - | 81 nC @ 10 V | - | - | - | - | - | 3031 pF @ 50 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 143W (Tc) | - | 13.9mOhm @ 38A, 10V | - | IPAK (TO-251AA) | - | MOSFET (Metal Oxide) | ±20V | 4V @ 100µA | |
Microchip Technology
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- | - | - | - | 700 V | - | - | - | N-Channel | - | - | - | - | - | - | - | - | - | Chassis Mount | - | - | - | - | - | - | SOT-227 (ISOTOP®) | - | SiCFET (Silicon Carbide) | - | - | |
Infineon Technologies
|
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- | - | - | 80A (Tc) | 60 V | - | 10V | - | N-Channel | - | 56 nC @ 10 V | - | - | - | - | - | 4500 pF @ 25 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 79W (Tc) | - | 7.4mOhm @ 80A, 10V | - | PG-TO262-3-1 | - | MOSFET (Metal Oxide) | ±20V | 4V @ 40µA | |
Infineon Technologies
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- | - | - | 3.3A | 250 V | - | - | - | N-Channel | - | - | - | - | - | - | - | - | - | Through Hole | - | - | 40W | - | - | - | TO-204AA (TO-3) | - | MOSFET (Metal Oxide) | - | - | |
Harris Semiconductor
|
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- | - | - | 15A (Tc) | 350 V | - | 10V | - | N-Channel | - | 120 nC @ 10 V | - | - | - | - | - | 2000 pF @ 25 V | - | Through Hole | - | -55°C ~ 150°C (TJ) | 150W (Tc) | - | 300mOhm @ 8A, 10V | - | TO-3 | - | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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- | - | - | 5.5A | 150 V | - | - | Standard | P-Channel | - | - | - | - | - | - | - | - | - | Through Hole | - | - | 75W | - | - | - | TO-204AE | - | MOSFET (Metal Oxide) | - | - | |
Infineon Technologies
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- | - | - | 8A (Tc) | 800 V | - | 10V | - | N-Channel | - | 20 nC @ 10 V | - | - | - | - | - | 570 pF @ 500 V | - | Through Hole | - | -55°C ~ 150°C (TJ) | 60W (Tc) | - | 600mOhm @ 3.4A, 10V | - | PG-TO251-3 | - | MOSFET (Metal Oxide) | ±20V | 3.5V @ 170µA | |
On Semiconductor
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- | - | - | 4.1A (Ta) | 150 V | - | 6V, 10V | - | N-Channel | - | 53 nC @ 10 V | - | - | - | - | - | 1884 pF @ 75 V | - | Surface Mount | - | -55°C ~ 150°C (TJ) | 3W (Ta) | - | 78mOhm @ 4.1A, 10V | - | 8-SO | - | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
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- | - | - | 80A (Tc) | 55 V | - | 10V | - | N-Channel | - | 269 nC @ 20 V | - | - | - | - | - | 3565 pF @ 25 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 375W (Tc) | - | 7mOhm @ 80A, 10V | - | TO-220-3 | - | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
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- | - | - | 75A (Tc) | 100 V | - | 4.5V, 10V | - | N-Channel | - | 153 nC @ 10 V | - | - | - | - | - | 4400 pF @ 25 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 310W (Tc) | - | 14mOhm @ 75A, 10V | - | D2PAK (TO-263) | - | MOSFET (Metal Oxide) | ±16V | 3V @ 250µA | |
On Semiconductor
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- | - | - | 42A (Ta), 49A (Tc) | 25 V | - | 4.5V, 10V | - | N-Channel | - | 119 nC @ 10 V | - | - | - | - | - | 7770 pF @ 13 V | - | Surface Mount | - | -55°C ~ 150°C (TJ) | 3.3W (Ta), 104W (Tc) | - | 1.25mOhm @ 32A, 10V | - | 8-PQFN (5x6) | - | MOSFET (Metal Oxide) | ±20V | 3V @ 1mA | |
Renesas
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Infineon Technologies
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- | - | - | 39A (Ta), 330A (Tc) | 60 V | - | 6V, 10V | - | N-Channel | - | 143 nC @ 10 V | - | - | - | - | - | 11000 pF @ 30 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 3W (Ta), 214W (Tc) | - | 1.05mOhm @ 50A, 10V | - | PG-TSON-8-3 | - | MOSFET (Metal Oxide) | ±20V | 3.3V @ 147µA | |
Renesas
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- | - | - | 83A (Tc) | 40 V | - | - | - | P-Channel | - | 200 nC @ 10 V | - | - | - | - | - | 9820 pF @ 10 V | - | Surface Mount | - | - | - | - | 5.3mOhm @ 41.5A, 10V | - | TO-263 | - | MOSFET (Metal Oxide) | - | 2.5V @ 1mA | |
Infineon Technologies
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- | - | - | 39A (Tc) | 100 V | - | 6V, 10V | - | N-Channel | - | 35 nC @ 10 V | - | - | - | - | - | 2500 pF @ 50 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 33W (Tc) | - | 12.6mOhm @ 39A, 10V | - | PG-TO220 Full Pack | - | MOSFET (Metal Oxide) | ±20V | 3.5V @ 46µA | |
On Semiconductor
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On Semiconductor
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On Semiconductor
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- | - | - | 8.4A (Tc) | 400 V | - | 10V | - | N-Channel | - | 131 nC @ 10 V | - | - | - | - | - | 2780 pF @ 25 V | - | Through Hole | - | -55°C ~ 150°C (TJ) | 49W (Tc) | - | 300mOhm @ 4.2A, 10V | - | TO-220F-3 | - | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Infineon Technologies
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- | - | - | 70A (Tc) | 40 V | - | 10V | - | N-Channel | - | 32 nC @ 10 V | - | - | - | - | - | 2550 pF @ 25 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 58W (Tc) | - | 6.5mOhm @ 70A, 10V | - | PG-TO262-3 | - | MOSFET (Metal Oxide) | ±20V | 4V @ 26µA | |
Renesas
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On Semiconductor
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- | - | - | 15A (Tc) | 500 V | - | 10V | - | N-Channel | - | 41 nC @ 10 V | - | - | - | - | - | 1850 pF @ 25 V | - | Through Hole | - | -55°C ~ 175°C (TJ) | 300W (Tc) | - | 380mOhm @ 7.5A, 10V | - | TO-220-3 | - | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Harris Semiconductor
|
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- | - | - | 28A (Tc) | 100 V | - | 10V | - | N-Channel | - | 59 nC @ 10 V | - | - | - | - | - | 1450 pF @ 25 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 150W (Tc) | - | 77mOhm @ 17A, 10V | - | TO-263AB | - | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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- | - | - | 76A (Tc) | 150 V | - | 8V, 10V | - | N-Channel | - | 35 nC @ 10 V | - | - | - | - | - | 2770 pF @ 75 V | - | Surface Mount | - | -55°C ~ 150°C (TJ) | 125W (Tc) | - | 11mOhm @ 38A, 10V | - | PG-TDSON-8-7 | - | MOSFET (Metal Oxide) | ±20V | 4.6V @ 91µA | |
Renesas
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On Semiconductor
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- | - | - | 75A (Tc) | 30 V | - | 4.5V, 10V | - | N-Channel | - | 300 nC @ 10 V | - | - | - | - | - | 11000 pF @ 15 V | - | Surface Mount | - | -55°C ~ 175°C (TJ) | 345W (Tc) | - | 2.3mOhm @ 75A, 10V | - | D²PAK (TO-263) | - | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA |