What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
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Renesas
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Infineon Technologies
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22.4A (Tc) | 650 V | 10V | - | N-Channel | 86 nC @ 10 V | 2340 pF @ 100 V | Surface Mount | -55°C ~ 150°C (TJ) | 195.3W (Tc) | 150mOhm @ 9.3A, 10V | PG-TO263-3 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 900µA | |
Infineon Technologies
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80A (Tc) | 40 V | 10V | - | N-Channel | 66 nC @ 10 V | 5260 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 94W (Tc) | 3.7mOhm @ 80A, 10V | PG-TO262-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 53µA | |
Infineon Technologies
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80A (Tc) | 40 V | 10V | - | N-Channel | 66 nC @ 10 V | 5260 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 94W (Tc) | 3.7mOhm @ 80A, 10V | PG-TO220-3-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 53µA | |
Diodes Incorporated
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140A (Tc) | 100 V | 10V | - | N-Channel | 114 nC @ 10 V | 3688 pF @ 50 V | Through Hole | -55°C ~ 150°C (TJ) | 187W (Tc) | 5mOhm @ 13A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 3.5V @ 250µA | |
Infineon Technologies
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40A (Ta), 198A (Tc) | 60 V | 6V, 10V | - | N-Channel | 305 nC @ 10 V | 13800 pF @ 30 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.8W (Ta), 300W (Tc) | 1.3mOhm @ 100A, 10V | PG-TO263-3 | MOSFET (Metal Oxide) | ±20V | 3.3V @ 246µA | |
Infineon Technologies
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195A (Tc) | 40 V | 4.5V, 10V | - | N-Channel | 162 nC @ 4.5 V | 10315 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 375W (Tc) | 1.7mOhm @ 195A, 10V | D2PAK | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Infineon Technologies
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195A (Tc) | 40 V | - | - | N-Channel | 162 nC @ 4.5 V | 10315 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 375W (Tc) | 1.7mOhm @ 195A, 10V | D2PAK | MOSFET (Metal Oxide) | - | 2.5V @ 250µA | |
Vishay
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21A (Tc) | 600 V | 10V | - | N-Channel | 44 nC @ 10 V | 1811 pF @ 100 V | Surface Mount | -55°C ~ 150°C (TJ) | 132W (Tc) | 125mOhm @ 12A, 10V | PowerPAK®10 x 12 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Renesas
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STMicroelectronics
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80A (Tc) | 75 V | 10V | - | N-Channel | 160 nC @ 10 V | 3700 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 300W (Tc) | 11mOhm @ 40A, 10V | TO-220 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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35A (Tc) | 55 V | 4.5V, 10V | - | N-Channel | 130 nC @ 10 V | 2660 pF @ 25 V | Surface Mount | -40°C ~ 175°C (TJ) | 170W (Tc) | 13mOhm @ 19A, 10V | PG-TO263-5-2 | MOSFET (Metal Oxide) | ±20V | 2V @ 130µA | |
Renesas
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On Semiconductor
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20A (Tc) | 600 V | 10V | - | N-Channel | 98 nC @ 10 V | 3080 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 208W (Tc) | 190mOhm @ 10A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Infineon Technologies
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120A (Tc) | 75 V | - | - | N-Channel | 170 nC @ 10 V | 6920 pF @ 50 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 4.1mOhm @ 75A, 10V | D2PAK | MOSFET (Metal Oxide) | - | 4V @ 150µA | |
On Semiconductor
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5.8A (Tc) | 600 V | 10V | - | N-Channel | 54 nC @ 10 V | 1900 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 55W (Tc) | 700mOhm @ 2.9A, 10V | TO-220F-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Infineon Technologies
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STMicroelectronics
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200A (Tc) | 40 V | 10V | - | N-Channel | 240 nC @ 10 V | 13800 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 1.3mOhm @ 80A, 10V | H2PAK-6 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Renesas
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Renesas
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Harris Semiconductor
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27A (Tc) | 100 V | 10V | - | N-Channel | 59 nC @ 10 V | 1275 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 180W (Tc) | 99mOhm @ 19A, 10V | TO-247 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Renesas
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Vishay
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21A (Tc) | 600 V | 10V | - | N-Channel | 45 nC @ 10 V | 1863 pF @ 100 V | Surface Mount | -55°C ~ 150°C | 132W (Tc) | 125mOhm @ 12A, 10V | PowerPAK®10 x 12 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Infineon Technologies
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IXYS
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90A (Tc) | 55 V | 10V | - | N-Channel | 42 nC @ 10 V | 2770 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 150W (Tc) | 8.4mOhm @ 25A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Renesas
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Renesas
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Infineon Technologies
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77A (Tc) | 55 V | 10V | - | N-Channel | 60 nC @ 10 V | 1770 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 158W (Tc) | 12mOhm @ 38A, 10V | PG-TO220-3-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 93µA | |
On Semiconductor
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75A (Tc) | 150 V | 10V | - | N-Channel | 480 nC @ 20 V | 7690 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 500W (Tc) | 16mOhm @ 75A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
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10A (Ta), 67A (Tc) | 60 V | 5V, 10V | - | N-Channel | 31 nC @ 5 V | 2900 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 125W (Tc) | 11.6mOhm @ 67A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
Infineon Technologies
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Vishay
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6A (Tc) | 800 V | 10V | - | N-Channel | 54 nC @ 10 V | 1128 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 33W (Tc) | 350mOhm @ 6.5A, 10V | TO-220 Full Pack | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
On Semiconductor
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20A (Tc) | 500 V | 10V | - | N-Channel | 55 nC @ 10 V | 3290 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 277W (Tc) | 265mOhm @ 10A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Renesas
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Infineon Technologies
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21A (Ta), 194A (Tc) | 120 V | 8V, 10V | - | N-Channel | 74 nC @ 10 V | 5500 pF @ 60 V | Surface Mount | -55°C ~ 175°C (TJ) | 3W (Ta), 250W (Tc) | 3.04mOhm @ 50A, 10V | PG-TSON-8-3 | MOSFET (Metal Oxide) | ±20V | 3.6V @ 141µA | |
Sanyo Denki
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14A (Ta), 8.7A (Tc) | 600 V | - | - | N-Channel | 46 nC @ 10 V | 1200 pF @ 30 V | Through Hole | 150°C | 2W (Ta), 40W (Tc) | 680mOhm @ 7A, 10V | TO-220FI(LS) | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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Infineon Technologies
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11.4A (Tc) | 650 V | 10V | - | N-Channel | 41 nC @ 10 V | 1100 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 400µA | |
Infineon Technologies
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20A (Tc) | 600 V | 10V | - | N-Channel | 27 nC @ 10 V | 1080 pF @ 400 V | Surface Mount | -55°C ~ 150°C (TJ) | 120W (Tc) | 125mOhm @ 6.4A, 10V | PG-HDSOP-10-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 320µA | |
IXYS
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750mA (Tc) | 1000 V | 10V | - | N-Channel | 7.8 nC @ 10 V | 260 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 40W (Tc) | 17Ohm @ 375mA, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 4.5V @ 250µA | |
Sanyo Denki
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4.3A (Tc) | 800 V | - | - | N-Channel | 36 nC @ 10 V | 710 pF @ 30 V | Through Hole | 150°C | 2W (Ta), 36W (Tc) | 2.5Ohm @ 3.25A, 10V | TO-220FI(LS) | MOSFET (Metal Oxide) | ±30V | 4V @ 1mA | |
Infineon Technologies
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120A (Tc) | 40 V | 10V | - | N-Channel | 210 nC @ 10 V | 14300 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 300W (Tc) | 2.3mOhm @ 80A, 10V | PG-TO220-3-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 230µA | |
Infineon Technologies
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120A (Tc) | 100 V | 10V | - | N-Channel | 140 nC @ 10 V | 10120 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 250W (Tc) | 3.5mOhm @ 100A, 10V | PG-TO263-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 180µA | |
Renesas
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- | 500 V | 8V, 10V | - | N-Channel | - | - | Through Hole | - | - | - | TO-220FP | MOSFET (Metal Oxide) | ±30V | - | |
On Semiconductor
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46A (Tc) | 280 V | 10V | - | N-Channel | 144 nC @ 10 V | 6700 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 215W (Tc) | 41mOhm @ 23A, 10V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA |