What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ALPHA & OMEGA SEMICONDU CTOR
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18A (Ta), 46A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 33 nC @ 10 V | 1229 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 2.5W (Ta), 50W (Tc) | 5mOhm @ 20A, 10V | TO-252 (DPAK) | MOSFET (Metal Oxide) | ±20V | 2.2V @ 250µA | |
GeneSiC Semiconductor
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- | 750 V | - | - | - | - | - | Through Hole | - | - | - | TO-247-3 | SiCFET (Silicon Carbide) | +20V, -10V | - | |
ALPHA & OMEGA SEMICONDU CTOR
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15A (Ta), 54A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 22.5 nC @ 10 V | 951 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 2.5W (Ta), 50W (Tc) | 8mOhm @ 20A, 10V | TO-252 (DPAK) | MOSFET (Metal Oxide) | ±20V | 2.6V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
ALPHA & OMEGA SEMICONDU CTOR
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
ALPHA & OMEGA SEMICONDU CTOR
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17A (Ta), 46A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 18 nC @ 10 V | 1500 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 2.5W (Ta), 53W (Tc) | 5.2mOhm @ 20A, 10V | TO-252 (DPAK) | MOSFET (Metal Oxide) | ±20V | 2.4V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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18A (Ta), 46A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 33 nC @ 10 V | 1333 pF @ 15 V | Through Hole | -55°C ~ 175°C (TJ) | 2.5W (Ta), 50W (Tc) | 5mOhm @ 20A, 10V | TO-251A | MOSFET (Metal Oxide) | ±20V | 2.4V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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13A (Ta), 55A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 28 nC @ 10 V | 1430 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 2.3W (Ta), 50W (Tc) | 8mOhm @ 20A, 10V | TO-251A | MOSFET (Metal Oxide) | ±20V | 2.4V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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18A (Ta), 46A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 33 nC @ 10 V | 1229 pF @ 15 V | Through Hole | -55°C ~ 175°C (TJ) | 2.5W (Ta), 50W (Tc) | 5mOhm @ 20A, 10V | TO-251B | MOSFET (Metal Oxide) | ±20V | 2.2V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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18A (Ta), 46A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 33 nC @ 10 V | 1229 pF @ 15 V | Through Hole | -55°C ~ 175°C (TJ) | 2.5W (Ta), 50W (Tc) | 5mOhm @ 20A, 10V | TO-251B | MOSFET (Metal Oxide) | ±20V | 2.2V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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18A (Ta), 46A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 22.5 nC @ 10 V | 951 pF @ 15 V | - | -55°C ~ 175°C (TJ) | 2.5W (Ta), 50W (Tc) | 8mOhm @ 20A, 10V | - | MOSFET (Metal Oxide) | ±20V | 2.6V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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700mA (Ta) | 20 V | 1.5V, 4.5V | - | P-Channel | 0.75 nC @ 4.5 V | 50 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 900mW (Ta) | 710mOhm @ 400mA, 4.5V | 3-DFN (1.0 x 0.60) | MOSFET (Metal Oxide) | ±8V | 1.1V @ 250µA | |
Infineon Technologies
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80A (Tc) | 100 V | 6V, 10V | - | N-Channel | 68 nC @ 10 V | 4910 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 150W (Tc) | 7.2mOhm @ 80A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 90µA | |
Nexperia USA Inc.
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75A (Tc) | 100 V | 10V | - | N-Channel | 90 nC @ 10 V | 4900 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 300W (Tc) | 15mOhm @ 25A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 1mA | |
Vishay
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9A (Tc) | 200 V | 4V, 5V | - | N-Channel | 40 nC @ 10 V | 1100 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W (Ta), 74W (Tc) | 400mOhm @ 5.4A, 5V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±10V | 2V @ 250µA | |
Infineon Technologies
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195A (Tc) | 60 V | 6V, 10V | - | N-Channel | 279 nC @ 10 V | 10034 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 294W (Tc) | 2.4mOhm @ 100A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 3.7V @ 250µA | |
Vishay
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20A (Tc) | 60 V | 4V, 5V | - | N-Channel | 35 nC @ 5 V | 1600 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 42W (Tc) | 50mOhm @ 12A, 5V | TO-220-3 | MOSFET (Metal Oxide) | ±10V | 2V @ 250µA | |
ROHM Semiconductor
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51A (Tc) | 250 V | 10V | - | N-Channel | 120 nC @ 10 V | 7000 pF @ 25 V | Surface Mount | 150°C (TJ) | 1.56W (Ta), 40W (Tc) | 65mOhm @ 25.5A, 10V | LPTS | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Infineon Technologies
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80A (Tc) | 80 V | 6V, 10V | - | N-Channel | 53 nC @ 10 V | 3770 pF @ 40 V | Through Hole | -55°C ~ 175°C (TJ) | 125W (Tc) | 5.2mOhm @ 80A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 66µA | |
IXYS
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18A (Tc) | 100 V | 10V | - | P-Channel | 39 nC @ 10 V | 2100 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 83W (Tc) | 120mOhm @ 9A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±15V | 4.5V @ 250µA | |
IXYS
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32A (Tc) | 50 V | 10V | - | P-Channel | 46 nC @ 10 V | 1975 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 83W (Tc) | 39mOhm @ 500mA, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±15V | 4.5V @ 250µA | |
Vishay
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50A (Tc) | 60 V | 10V | - | N-Channel | 110 nC @ 10 V | 2400 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.7W (Ta), 190W (Tc) | 18mOhm @ 43A, 10V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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64A (Tc) | 55 V | 10V | - | N-Channel | 170 nC @ 10 V | 4000 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 63W (Tc) | 8mOhm @ 34A, 10V | TO-220AB Full-Pak | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Vishay
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17A (Tc) | 100 V | 10V | - | N-Channel | 72 nC @ 10 V | 1700 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 48W (Tc) | 77mOhm @ 10A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Vishay
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9.9A (Tc) | 200 V | 4V, 5V | - | N-Channel | 66 nC @ 10 V | 1800 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 40W (Tc) | 180mOhm @ 5.9A, 5V | TO-220-3 | MOSFET (Metal Oxide) | ±10V | 2V @ 250µA | |
Infineon Technologies
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20.2A (Tc) | 600 V | 10V | - | N-Channel | 37 nC @ 10 V | 1750 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 34W (Tc) | 190mOhm @ 7.6A, 10V | PG-TO220-FP | MOSFET (Metal Oxide) | ±20V | 4.5V @ 630µ | |
Infineon Technologies
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25A (Tc) | 250 V | 10V | - | N-Channel | 29 nC @ 10 V | 2350 pF @ 100 V | Through Hole | -55°C ~ 175°C (TJ) | 136W (Tc) | 60mOhm @ 25A, 10V | PG-TO220-3-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 90µA | |
Nexperia USA Inc.
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75A (Tc) | 55 V | 10V | - | N-Channel | 95.6 nC @ 5 V | 7665 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 300W (Tc) | 3.7mOhm @ 25A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±15V | 2V @ 1mA | |
Infineon Technologies
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100A (Tc) | 120 V | 10V | - | N-Channel | 182 nC @ 10 V | 12000 pF @ 60 V | Through Hole | -55°C ~ 175°C (TJ) | 300W (Tc) | 4.8mOhm @ 100A, 10V | PG-TO220-3-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 230µA | |
UnitedSiC
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28A (Tc) | 750 V | - | - | N-Channel | 37.8 nC @ 15 V | 1422 pF @ 100 V | Through Hole | -55°C ~ 175°C (TJ) | 155W (Tc) | 74mOhm @ 20A, 12V | TO-247-4 | SiCFET (Cascode SiCJFET) | ±20V | 6V @ 10mA | |
Infineon Technologies
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21A (Tc) | 500 V | 10V | - | N-Channel | 95 nC @ 10 V | 2400 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 208W (Tc) | 190mOhm @ 13.1A, 10V | PG-TO220-3-1 | MOSFET (Metal Oxide) | ±20V | 3.9V @ 1mA | |
Infineon Technologies
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31A (Tc) | 600 V | 10V | - | N-Channel | 45 nC @ 10 V | 1952 pF @ 400 V | Through Hole | -55°C ~ 150°C (TJ) | 117W (Tc) | 99mOhm @ 10.5A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 530µA | |
IXYS
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1A (Tc) | 1200 V | 10V | - | N-Channel | 17.6 nC @ 10 V | 550 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 63W (Tc) | 20Ohm @ 500mA, 10V | TO-263AA | MOSFET (Metal Oxide) | ±20V | 4.5V @ 50µA | |
Vishay
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16A (Tc) | 600 V | 10V | - | N-Channel | 77 nC @ 10 V | 2628 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 39W (Tc) | 68mOhm @ 16A, 10V | TO-220 Full Pack | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
GeneSiC Semiconductor
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11A (Tc) | 1200 V | 15V | - | N-Channel | 12 nC @ 15 V | 334 pF @ 800 V | Surface Mount | -55°C ~ 175°C (TJ) | 75W (Tc) | 420mOhm @ 4A, 15V | TO-263-7 | SiCFET (Silicon Carbide) | ±15V | 2.69V @ 2mA | |
Microchip Technology
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7A (Tc) | 1700 V | 20V | - | N-Channel | 11 nC @ 20 V | 184 pF @ 1360 V | Through Hole | -55°C ~ 175°C (TJ) | 68W (Tc) | 940mOhm @ 2.5A, 20V | TO-247-4 | SiCFET (Silicon Carbide) | +23V, -10V | 3.25V @ 100µA (Typ) | |
On Semiconductor
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40A (Tc) | 650 V | 10V | - | N-Channel | 80 nC @ 10 V | 3750 pF @ 400 V | Through Hole | -55°C ~ 150°C (TJ) | 266W (Tc) | 67mOhm @ 20A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 4V @ 3.9mA | |
Infineon Technologies
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24.3A (Tc) | 650 V | 10V | - | N-Channel | 135 nC @ 10 V | 3000 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 240W (Tc) | 160mOhm @ 15.4A, 10V | PG-TO247-3-1 | MOSFET (Metal Oxide) | ±20V | 3.9V @ 1.2mA | |
GeneSiC Semiconductor
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9A (Tc) | 1700 V | 15V | - | N-Channel | 18 nC @ 15 V | 454 pF @ 1000 V | Surface Mount | -55°C ~ 175°C (TJ) | 91W (Tc) | 585mOhm @ 4A, 15V | TO-263-7 | SiCFET (Silicon Carbide) | ±15V | 2.7V @ 2mA | |
UnitedSiC
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31A (Tc) | 650 V | 12V | - | N-Channel | 51 nC @ 15 V | 1500 pF @ 100 V | Through Hole | -55°C ~ 175°C (TJ) | 190W (Tc) | 100mOhm @ 20A, 12V | TO-247-3 | - | ±25V | 6V @ 10mA | |
UnitedSiC
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31A (Tc) | 650 V | 12V | - | N-Channel | 51 nC @ 15 V | 1500 pF @ 100 V | Through Hole | -55°C ~ 175°C (TJ) | 190W (Tc) | 111mOhm @ 20A, 12V | TO-247-3 | - | ±25V | 6V @ 10mA | |
Infineon Technologies
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50A (Tc) | 300 V | 10V | - | N-Channel | 107 nC @ 10 V | 4893 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 313W (Tc) | 40mOhm @ 30A, 10V | PG-TO247-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 270µA | |
IXYS
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3A (Tc) | 1200 V | 10V | - | N-Channel | 39 nC @ 10 V | 1050 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 200W (Tc) | 4.5Ohm @ 500mA, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 5V @ 1.5mA | |
IXYS
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56A (Tc) | 300 V | 10V | - | N-Channel | 56 nC @ 10 V | 3750 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 27mOhm @ 28A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 1.5mA | |
IXYS
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72A (Tc) | 200 V | 10V | - | N-Channel | 55 nC @ 10 V | 3780 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 20mOhm @ 36A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 1.5mA | |
WOLFSPEED
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10A (Tc) | 1200 V | 20V | - | N-Channel | 20.4 nC @ 20 V | 259 pF @ 1000 V | Through Hole | -55°C ~ 150°C (TJ) | 62.5W (Tc) | 370mOhm @ 6A, 20V | TO-247-3 | SiCFET (Silicon Carbide) | +25V, -10V | 2.8V @ 1.25mA (Typ) | |
Infineon Technologies
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4.7A (Tc) | 1200 V | 15V, 18V | - | N-Channel | 5.3 nC @ 18 V | 182 pF @ 800 V | Through Hole | -55°C ~ 175°C (TJ) | 60W (Tc) | 455mOhm @ 2A, 18V | PG-TO247-3-41 | SiCFET (Silicon Carbide) | +23V, -7V | 5.7V @ 1mA | |
UnitedSiC
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28.8A (Tc) | 1200 V | - | - | N-Channel | 23 nC @ 12 V | 754 pF @ 100 V | Surface Mount | -55°C ~ 175°C (TJ) | 190W (Tc) | 105mOhm @ 20A, 12V | D2PAK-7 | SiCFET (Cascode SiCJFET) | ±25V | 6V @ 10mA | |
IXYS
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32A (Tc) | 200 V | 10V | - | P-Channel | 185 nC @ 10 V | 14500 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 300W (Tc) | 130mOhm @ 16A, 10V | TO-263AA | MOSFET (Metal Oxide) | ±15V | 4V @ 250µA | |
WOLFSPEED
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4.9A (Tc) | 1700 V | 20V | - | N-Channel | 13 nC @ 20 V | 191 pF @ 1000 V | Through Hole | -55°C ~ 150°C (TJ) | 69W (Tc) | 1.1Ohm @ 2A, 20V | TO-247-3 | SiCFET (Silicon Carbide) | +25V, -10V | 2.4V @ 100µA |