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Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single facilitate the control of electrical signals in various electronic applications. Key attributes include Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). These components are essential for industrial power management and new product design.

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What are Transistors - FETs, MOSFETs - Single ?

Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.

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Part & Mfr Total Stock Pricing & RFQ Avalanche Current Continuous Drain Current Continuous Drain Current (Id) Current Drain to Source Voltage (Vdss) Drive Voltage Drive Voltage (Max Rds On, Min Rds On) FET Feature FET Type Gate Charge (Qg) Gate Charge (Qg) (Max) @ Vgs Gate Threshold Voltage (Vgs(th)) Gate Threshold Voltage (Vgs(th)) (Max) @ Id Gate-Source Voltage (Vgs) Halogen Free Input Capacitance (Ciss) Input Capacitance (Ciss) (Max) @ Vds Lead Spacing Mounting Type On-Resistance (Rds On) Operating Temperature Power Dissipation (Max) Pulsed Drain Current Rds On (Max) @ Id, Vgs Storage Temperature Supplier Device Package Tape & Reel Technology Vgs (Max) Vgs(th) (Max) @ Id
AO3404_101
AO3404_101
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 - - - 5A (Ta) 30 V - 4.5V, 10V - N-Channel - 6.3 nC @ 10 V - - - - - 310 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 31mOhm @ 5A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±20V 2.4V @ 250µA
AO3404_102
AO3404_102
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 - - - 5A (Ta) 30 V - 4.5V, 10V - N-Channel - 6.3 nC @ 10 V - - - - - 310 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 31mOhm @ 5A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±20V 2.4V @ 250µA
FQB5P20TM
FQB5P20TM
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 - - - 4.8A (Tc) 200 V - 10V - P-Channel - 13 nC @ 10 V - - - - - 430 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 3.13W (Ta), 75W (Tc) - 1.4Ohm @ 2.4A, 10V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±30V 5V @ 250µA
IRLR230ATM
IRLR230ATM
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 - - - 7.5A (Tc) 200 V - 5V - N-Channel - 27 nC @ 5 V - - - - - 755 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 48W (Tc) - 400mOhm @ 3.75A, 5V - TO-252AA - MOSFET (Metal Oxide) ±20V 2V @ 250µA
FQD5N40TF
FQD5N40TF
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 - - - 3.4A (Tc) 400 V - 10V - N-Channel - 13 nC @ 10 V - - - - - 460 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 45W (Tc) - 1.6Ohm @ 1.7A, 10V - TO-252AA - MOSFET (Metal Oxide) ±30V 5V @ 250µA
FQPF2P40
FQPF2P40
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 - - - 1.34A (Tc) 400 V - 10V - P-Channel - 13 nC @ 10 V - - - - - 350 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 28W (Tc) - 6.5Ohm @ 670mA, 10V - TO-220F-3 - MOSFET (Metal Oxide) ±30V 5V @ 250µA
FQU30N06LTU
FQU30N06LTU
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 - - - 24A (Tc) 60 V - 5V, 10V - N-Channel - 20 nC @ 5 V - - - - - 1040 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 2.5W (Ta), 44W (Tc) - 39mOhm @ 12A, 10V - I-PAK - MOSFET (Metal Oxide) ±20V 2.5V @ 250µA
FQD19N10TF
FQD19N10TF
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 - - - 15.6A (Tc) 100 V - 10V - N-Channel - 25 nC @ 10 V - - - - - 780 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 50W (Tc) - 100mOhm @ 7.8A, 10V - TO-252AA - MOSFET (Metal Oxide) ±25V 4V @ 250µA
FQB4N20LTM
FQB4N20LTM
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 - - - 3.8A (Tc) 200 V - 5V, 10V - N-Channel - 5.2 nC @ 5 V - - - - - 310 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 3.13W (Ta), 45W (Tc) - 1.35Ohm @ 1.9A, 10V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
AO3406L_106
AO3406L_106
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 - - - 3.6A (Ta) 30 V - 4.5V, 10V - N-Channel - 8.5 nC @ 10 V - - - - - 375 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 65mOhm @ 3.6A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±20V 3V @ 250µA
AO3406L_107
AO3406L_107
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 - - - 3.6A (Ta) 30 V - 4.5V, 10V - N-Channel - 8.5 nC @ 10 V - - - - - 375 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 65mOhm @ 3.6A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±20V 3V @ 250µA
AO3407L
AO3407L
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 - - - 4.1A (Ta) 30 V - 4.5V, 10V - P-Channel - 18 nC @ 10 V - - - - - 840 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 52mOhm @ 4.1A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±20V 3V @ 250µA
AO3409L
AO3409L
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 - - - 2.6A (Ta) 30 V - 4.5V, 10V - P-Channel - 9 nC @ 10 V - - - - - 370 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 130mOhm @ 2.6A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±20V 3V @ 250µA
AO3409L_102
AO3409L_102
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 - - - 2.6A (Ta) 30 V - 4.5V, 10V - P-Channel - 9 nC @ 10 V - - - - - 370 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 130mOhm @ 2.6A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±20V 3V @ 250µA
AO3413L
AO3413L
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 - - - 3A (Ta) 20 V - 1.8V, 4.5V - P-Channel - 6.1 nC @ 4.5 V - - - - - 540 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 97mOhm @ 3A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±8V 1V @ 250µA
AO3413L_101
AO3413L_101
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 - - - 3A (Ta) 20 V - 1.8V, 4.5V - P-Channel - 6.1 nC @ 4.5 V - - - - - 540 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 97mOhm @ 3A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±8V 1V @ 250µA
AO3415L_108
AO3415L_108
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 - - - 4A (Ta) 20 V - 1.5V, 4.5V - P-Channel - 17.2 nC @ 4.5 V - - - - - 1450 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 43mOhm @ 4A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±8V 1V @ 250µA
AO4485L
AO4485L
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 - - - 10A (Ta) 40 V - 4.5V, 10V - P-Channel - 55 nC @ 10 V - - - - - 3000 pF @ 20 V - Surface Mount - -55°C ~ 150°C (TJ) 1.7W (Ta) - 15mOhm @ 10A, 10V - 8-SOIC - MOSFET (Metal Oxide) ±20V 2.5V @ 250µA
FQB3N25TM
FQB3N25TM
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 - - - 2.8A (Tc) 250 V - 10V - N-Channel - 5.2 nC @ 10 V - - - - - 170 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 3.13W (Ta), 45W (Tc) - 2.2Ohm @ 1.4A, 10V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±30V 5V @ 250µA
HUF76407P3
HUF76407P3
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 - - - 13A (Tc) 60 V - 4.5V, 10V - N-Channel - 11.3 nC @ 10 V - - - - - 350 pF @ 25 V - Through Hole - -55°C ~ 175°C (TJ) 38W (Tc) - 92mOhm @ 13A, 10V - TO-220-3 - MOSFET (Metal Oxide) ±16V 3V @ 250µA
AO3416L_102
AO3416L_102
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 - - - 6.5A (Ta) 20 V - 1.8V, 4.5V - N-Channel - 16 nC @ 4.5 V - - - - - 1160 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 22mOhm @ 6.5A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±8V 1V @ 250µA
AO3416L_103
AO3416L_103
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 - - - 6.5A (Ta) 20 V - 1.8V, 4.5V - N-Channel - 16 nC @ 4.5 V - - - - - 1160 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 22mOhm @ 6.5A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±8V 1V @ 250µA
AO3418L
AO3418L
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 - - - 3.8A (Ta) 30 V - 2.5V, 10V - N-Channel - 3.6 nC @ 4.5 V - - - - - 270 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 60mOhm @ 3.8A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±12V 1.8V @ 250µA
FQD14N15TM
FQD14N15TM
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 - - - 10A (Tc) 150 V - 10V - N-Channel - 23 nC @ 10 V - - - - - 715 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 50W (Tc) - 210mOhm @ 5A, 10V - TO-252AA - MOSFET (Metal Oxide) ±25V 4V @ 250µA
AO3418L_101
AO3418L_101
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 - - - 3.8A (Ta) 30 V - 2.5V, 10V - N-Channel - 3.6 nC @ 4.5 V - - - - - 270 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 60mOhm @ 3.8A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±12V 1.8V @ 250µA
AO3419L
AO3419L
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 - - - 3.5A (Ta) 20 V - 2.5V, 10V - P-Channel - 6.6 nC @ 4.5 V - - - - - 620 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 75mOhm @ 3.5A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±12V 1.4V @ 250µA
AO3419L_101
AO3419L_101
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 - - - 3.5A (Ta) 20 V - 2.5V, 10V - P-Channel - 6.6 nC @ 4.5 V - - - - - 620 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 1.4W (Ta) - 75mOhm @ 3.5A, 10V - SOT-23-3 - MOSFET (Metal Oxide) ±12V 1.4V @ 250µA
AO3422L
AO3422L
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 - - - 2.1A (Ta) 55 V - 2.5V, 4.5V - N-Channel - 3.3 nC @ 4.5 V - - - - - 300 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 1.25W (Ta) - 160mOhm @ 2.1A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±12V 2V @ 250µA
AO3422L_103
AO3422L_103
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 - - - 2.1A (Ta) 55 V - 2.5V, 4.5V - N-Channel - 3.3 nC @ 4.5 V - - - - - 300 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 1.25W (Ta) - 160mOhm @ 2.1A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±12V 2V @ 250µA
AO3422L_104
AO3422L_104
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 - - - 2.1A (Ta) 55 V - 2.5V, 4.5V - N-Channel - 3.3 nC @ 4.5 V - - - - - 300 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 1.25W (Ta) - 160mOhm @ 2.1A, 4.5V - SOT-23-3 - MOSFET (Metal Oxide) ±12V 2V @ 250µA
AO4354_101
AO4354_101
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 - - - 23A (Ta) 30 V - 4.5V, 10V - N-Channel - 49 nC @ 10 V - - - - - 2010 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3.1W (Ta) - 3.7mOhm @ 20A, 10V - 8-SOIC - MOSFET (Metal Oxide) ±20V 2.2V @ 250µA
FQD9N25TF
FQD9N25TF
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 - - - 7.4A (Tc) 250 V - 10V - N-Channel - 20 nC @ 10 V - - - - - 700 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 55W (Tc) - 420mOhm @ 3.7A, 10V - TO-252AA - MOSFET (Metal Oxide) ±30V 5V @ 250µA
FQD6N40CTF
FQD6N40CTF
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 - - - 4.5A (Tc) 400 V - 10V - N-Channel - 20 nC @ 10 V - - - - - 625 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 48W (Tc) - 1Ohm @ 2.25A, 10V - TO-252AA - MOSFET (Metal Oxide) ±30V 4V @ 250µA
FQB5N20LTM
FQB5N20LTM
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 - - - 4.5A (Tc) 200 V - 5V, 10V - N-Channel - 6.2 nC @ 5 V - - - - - 325 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 3.13W (Ta), 52W (Tc) - 1.2Ohm @ 2.25A, 10V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±25V 2V @ 250µA
FQB6N15TM
FQB6N15TM
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 - - - 6.4A (Tc) 150 V - 10V - N-Channel - 8.5 nC @ 10 V - - - - - 270 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.75W (Ta), 63W (Tc) - 600mOhm @ 3.2A, 10V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±25V 4V @ 250µA
HUFA76609D3
HUFA76609D3
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 - - - 10A (Tc) 100 V - 4.5V, 10V - N-Channel - 16 nC @ 10 V - - - - - 425 pF @ 25 V - Through Hole - -55°C ~ 175°C (TJ) 49W (Tc) - 160mOhm @ 10A, 10V - I-PAK - MOSFET (Metal Oxide) ±16V 3V @ 250µA
FQD3N60TM
FQD3N60TM
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 - - - 2.4A (Tc) 600 V - 10V - N-Channel - 13 nC @ 10 V - - - - - 450 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 50W (Tc) - 3.6Ohm @ 1.2A, 10V - TO-252AA - MOSFET (Metal Oxide) ±30V 5V @ 250µA
HUFA76409D3
HUFA76409D3
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 - - - 18A (Tc) 60 V - 4.5V, 10V - N-Channel - 15 nC @ 10 V - - - - - 485 pF @ 25 V - Through Hole - -55°C ~ 175°C (TJ) 49W (Tc) - 63mOhm @ 18A, 10V - I-PAK - MOSFET (Metal Oxide) ±16V 3V @ 250µA
HUFA75309D3
HUFA75309D3
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 - - - 19A (Tc) 55 V - 10V - N-Channel - 24 nC @ 20 V - - - - - 350 pF @ 25 V - Through Hole - -55°C ~ 175°C (TJ) 55W (Tc) - 70mOhm @ 19A, 10V - I-PAK - MOSFET (Metal Oxide) ±20V 4V @ 250µA
AO4406AL_103
AO4406AL_103
Alpha&Omega Semicondu Ctor
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 - - - 13A (Tc) 30 V - 4.5V, 10V - N-Channel - 17 nC @ 10 V - - - - - 910 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3.1W (Tc) - 11.5mOhm @ 12A, 10V - 8-SOIC - MOSFET (Metal Oxide) ±20V 2.5V @ 250µA
AO4407AL
AO4407AL
Alpha&Omega Semicondu Ctor
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 - - - 12A (Ta) 30 V - 6V, 20V - P-Channel - 39 nC @ 10 V - - - - - 2600 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3.1W (Ta) - 11mOhm @ 12A, 20V - 8-SOIC - MOSFET (Metal Oxide) ±25V 3V @ 250µA
AO4407AL_102
AO4407AL_102
Alpha&Omega Semicondu Ctor
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 - - - 12A (Ta) 30 V - 6V, 20V - P-Channel - 39 nC @ 10 V - - - - - 2600 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3.1W (Ta) - 11mOhm @ 12A, 20V - 8-SOIC - MOSFET (Metal Oxide) ±25V 3V @ 250µA
AO4423L_102
AO4423L_102
Alpha&Omega Semicondu Ctor
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 - - - 15A (Ta) 30 V - 6V, 20V - P-Channel - 98 nC @ 10 V - - - - - 5560 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3.1W (Ta) - 7mOhm @ 15A, 20V - 8-SOIC - MOSFET (Metal Oxide) ±25V 3.5V @ 250µA
AO4425L
AO4425L
Alpha&Omega Semicondu Ctor
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 - - - 14A (Ta) 38 V - 10V, 20V - P-Channel - 63 nC @ 10 V - - - - - 3800 pF @ 20 V - Surface Mount - -55°C ~ 150°C (TJ) 3.1W (Ta) - 10mOhm @ 14A, 20V - 8-SOIC - MOSFET (Metal Oxide) ±25V 3.5V @ 250µA
AO4430L
AO4430L
Alpha&Omega Semicondu Ctor
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 - - - 18A (Ta) 30 V - 4.5V, 10V - N-Channel - 124 nC @ 10 V - - - - - 7270 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3W (Ta) - 5.5mOhm @ 18A, 10V - 8-SOIC - MOSFET (Metal Oxide) ±20V 2.5V @ 250µA
AO4430L_102
AO4430L_102
Alpha&Omega Semicondu Ctor
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 - - - 18A (Ta) 30 V - 4.5V, 10V - N-Channel - 124 nC @ 10 V - - - - - 7270 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3W (Ta) - 5.5mOhm @ 18A, 10V - 8-SOIC - MOSFET (Metal Oxide) ±20V 2.5V @ 250µA
AO4435L_103
AO4435L_103
Alpha&Omega Semicondu Ctor
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 - - - 10.5A (Ta) 30 V - 5V, 20V - P-Channel - 24 nC @ 10 V - - - - - 1400 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 3.1W (Ta) - 14mOhm @ 11A, 20V - 8-SOIC - MOSFET (Metal Oxide) ±25V 3V @ 250µA
AO4484L
AO4484L
Alpha&Omega Semicondu Ctor
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 - - - 10A (Ta) 40 V - 4.5V, 10V - N-Channel - 37 nC @ 10 V - - - - - 1950 pF @ 20 V - Surface Mount - -55°C ~ 150°C (TJ) 1.7W (Ta) - 10mOhm @ 10A, 10V - 8-SOIC - MOSFET (Metal Oxide) ±20V 3V @ 250µA
FQD6P25TM
FQD6P25TM
Download Datasheet for FQD6P25TM
On Semiconductor
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 - - - 4.7A (Tc) 250 V - 10V - P-Channel - 27 nC @ 10 V - - - - - 780 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 2.5W (Ta), 55W (Tc) - 1.1Ohm @ 2.35A, 10V - TO-252AA - MOSFET (Metal Oxide) ±30V 5V @ 250µA
FQU5N50CTU
FQU5N50CTU
Download Datasheet for FQU5N50CTU
On Semiconductor
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 - - - 4A (Tc) 500 V - 10V - N-Channel - 24 nC @ 10 V - - - - - 625 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 2.5W (Ta), 48W (Tc) - 1.4Ohm @ 2A, 10V - I-PAK - MOSFET (Metal Oxide) ±30V 4V @ 250µA
Showing 37251-37300 of 41,316 products

About Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single are essential components in the realm of discrete semiconductor products, providing critical functionality in electronic circuits. These transistors are designed to handle various electrical parameters, making them suitable for applications ranging from industrial power management to new product design and prototyping.

When sourcing FETs and MOSFETs, it is crucial to compare key specifications such as Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). Understanding these attributes will help ensure that the selected components meet the specific requirements of your application.

Applications for these transistors include production electronics assembly, maintenance and field replacement, as well as engineering evaluation and qualification. They are vital in ensuring reliable performance in various electronic systems.

Buyers should prioritize parametric filtering to reduce sourcing risk and confirm mechanical and electrical compatibility with existing design constraints. It is advisable to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

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