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Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single facilitate the control of electrical signals in various electronic applications. Key attributes include Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). These components are essential for industrial power management and new product design.

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What are Transistors - FETs, MOSFETs - Single ?

Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.

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Part & Mfr Total Stock Pricing & RFQ Avalanche Current Continuous Drain Current Continuous Drain Current (Id) Current Drain to Source Voltage (Vdss) Drive Voltage Drive Voltage (Max Rds On, Min Rds On) FET Feature FET Type Gate Charge (Qg) Gate Charge (Qg) (Max) @ Vgs Gate Threshold Voltage (Vgs(th)) Gate Threshold Voltage (Vgs(th)) (Max) @ Id Gate-Source Voltage (Vgs) Halogen Free Input Capacitance (Ciss) Input Capacitance (Ciss) (Max) @ Vds Lead Spacing Mounting Type On-Resistance (Rds On) Operating Temperature Power Dissipation (Max) Pulsed Drain Current Rds On (Max) @ Id, Vgs Storage Temperature Supplier Device Package Tape & Reel Technology Vgs (Max) Vgs(th) (Max) @ Id
2SK3820-DL-1E
2SK3820-DL-1E
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 - - - 26A (Ta) 100 V - 4V, 10V - N-Channel - 44 nC @ 10 V - - - - - 2150 pF @ 20 V - Surface Mount - 150°C (TJ) 1.65W (Ta), 50W (Tc) - 60mOhm @ 13A, 10V - TO-263-2 - MOSFET (Metal Oxide) ±20V -
2SK4066-1E
2SK4066-1E
On Semiconductor
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 - - - 100A (Ta) 60 V - 4V, 10V - N-Channel - 220 nC @ 10 V - - - - - 12500 pF @ 20 V - Through Hole - 150°C (TJ) 1.65W (Ta), 90W (Tc) - 4.7mOhm @ 50A, 10V - TO-262-3 - MOSFET (Metal Oxide) ±20V -
2SK4066-DL-1E
2SK4066-DL-1E
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 - - - 100A (Ta) 60 V - 4V, 10V - N-Channel - 220 nC @ 10 V - - - - - 12500 pF @ 20 V - Surface Mount - 150°C (TJ) 1.65W (Ta), 90W (Tc) - 4.7mOhm @ 50A, 10V - TO-263-2 - MOSFET (Metal Oxide) ±20V -
2SK4087LS-1E
2SK4087LS-1E
On Semiconductor
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 - - - 9.2A (Tc) 600 V - 10V - N-Channel - 46 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 40W (Tc) - 610mOhm @ 7A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
EMH1405-P-TL-H
EMH1405-P-TL-H
On Semiconductor
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 - - - 8.5A (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - 8-EMH - - - -
2SK4088LS-1E
2SK4088LS-1E
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 - - - 7.5A (Tc) 650 V - 10V - N-Channel - 37.6 nC @ 10 V - - - - - 1000 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 37W (Tc) - 850mOhm @ 5.5A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
2SK4099LS-1E
2SK4099LS-1E
On Semiconductor
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 - - - 6.9A (Tc) 600 V - 10V - N-Channel - 29 nC @ 10 V - - - - - 750 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 35W (Tc) - 940mOhm @ 4A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
2SK4124-1E
2SK4124-1E
On Semiconductor
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 - - - 20A (Ta) 500 V - 10V - N-Channel - 46.6 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - 150°C (TJ) 2.5W (Ta), 170W (Tc) - 430mOhm @ 8A, 10V - TO-3P-3L - MOSFET (Metal Oxide) ±30V -
2SK4125-1E
2SK4125-1E
On Semiconductor
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 - - - 17A (Ta) 600 V - 10V - N-Channel - 46 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - 150°C (TJ) 2.5W (Ta), 170W (Tc) - 610mOhm @ 7A, 10V - TO-3P-3L - MOSFET (Metal Oxide) ±30V -
2SK536-MTK-TB-E
2SK536-MTK-TB-E
On Semiconductor
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 - - - 100mA (Tj) - - 10V - - - - - - - - - - - Surface Mount - 125°C (TJ) - - - - 3-CP - - ±12V -
3LN01S-K-TL-E
3LN01S-K-TL-E
On Semiconductor
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 - - - 150mA (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - SMCP - - - -
3LP01M-TL-E
3LP01M-TL-E
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 - - - 100mA (Ta) 30 V - 1.5V, 4V - P-Channel - 1.43 nC @ 10 V - - - - - 7.5 pF @ 10 V - Surface Mount - 150°C (TJ) 150mW (Ta) - 10.4Ohm @ 50mA, 4V - MCP - MOSFET (Metal Oxide) ±10V -
3LP01S-K-TL-E
3LP01S-K-TL-E
On Semiconductor
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 - - - 100mA (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - SMCP - - - -
5LN01M-TL-E
5LN01M-TL-E
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 - - - 100mA (Ta) 50 V - 1.5V, 4V - N-Channel - 1.57 nC @ 10 V - - - - - 6.6 pF @ 10 V - Surface Mount - 150°C (TJ) 150mW (Ta) - 7.8Ohm @ 50mA, 4V - MCP - MOSFET (Metal Oxide) ±10V -
5LN01SP
5LN01SP
On Semiconductor
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 - - - 100mA (Ta) 50 V - 1.5V, 4V - N-Channel - 1.57 nC @ 10 V - - - - - 6.6 pF @ 10 V - Through Hole - 150°C (TJ) 250mW (Ta) - 7.8Ohm @ 50mA, 4V - 3-SPA - MOSFET (Metal Oxide) ±10V 1.3V @ 100µA
MCH3333A-TL-H
MCH3333A-TL-H
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On Semiconductor
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 - - - 2A (Ta) 30 V - 1.8V, 4V - P-Channel - 2.8 nC @ 4 V - - - - - 240 pF @ 10 V - Surface Mount - - 900mW (Ta) - 215mOhm @ 1A, 4V - SC-70FL/MCPH3 - MOSFET (Metal Oxide) ±10V -
MCH3377-S-TL-E
MCH3377-S-TL-E
On Semiconductor
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 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MCH3478-S-TL-H
MCH3478-S-TL-H
On Semiconductor
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 - - - 2A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 3-MCPH - - - -
MCH3486-TL-H
MCH3486-TL-H
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On Semiconductor
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 - - - 2A (Ta) 60 V - 4V, 10V - N-Channel - 7 nC @ 10 V - - - - - 310 pF @ 20 V - Surface Mount - 150°C (TJ) 1W (Ta) - 137mOhm @ 1A, 10V - SC-70FL/MCPH3 - MOSFET (Metal Oxide) ±20V -
MCH6321-TL-W
MCH6321-TL-W
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On Semiconductor
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 - - - 4A (Ta) 20 V - 1.8V, 4.5V - P-Channel - 4.6 nC @ 4.5 V - - - - - 375 pF @ 10 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 83mOhm @ 2A, 4.5V - 6-MCPH - MOSFET (Metal Oxide) ±10V -
MCH6336-P-TL-E
MCH6336-P-TL-E
On Semiconductor
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 - - - 5A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 6-MCPH - - - -
MCH6336-S-TL-E
MCH6336-S-TL-E
On Semiconductor
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 - - - 5A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 6-MCPH - - - -
MCH6431-P-TL-H
MCH6431-P-TL-H
On Semiconductor
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 - - - 5A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 6-MCPH - - - -
MMBFV170LT3G
MMBFV170LT3G
On Semiconductor
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 - - - - - - - - - - - - - - - - - - Surface Mount - - - - - - SOT-23-3 (TO-236) - - - -
NDD01N60-1G
NDD01N60-1G
On Semiconductor
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 - - - 1.5A (Tc) 600 V - 10V - N-Channel - 7.2 nC @ 10 V - - - - - 160 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 46W (Tc) - 8.5Ohm @ 200mA, 10V - I-Pak - MOSFET (Metal Oxide) ±30V 3.7V @ 50µA
NDD02N40-1G
NDD02N40-1G
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 - - - 1.7A (Tc) 400 V - 10V - N-Channel - 5.5 nC @ 10 V - - - - - 121 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 39W (Tc) - 5.5Ohm @ 220mA, 10V - I-Pak - MOSFET (Metal Oxide) ±20V 2V @ 250µA
NDD60N360U1-1G
NDD60N360U1-1G
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 - - - 11A (Tc) 600 V - 10V - N-Channel - 26 nC @ 10 V - - - - - 790 pF @ 50 V - Through Hole - -55°C ~ 150°C (TJ) 114W (Tc) - 360mOhm @ 5.5A, 10V - I-PAK - MOSFET (Metal Oxide) ±25V 4V @ 250µA
NDD60N360U1-35G
NDD60N360U1-35G
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On Semiconductor
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 - - - 11A (Tc) 600 V - 10V - N-Channel - 26 nC @ 10 V - - - - - 790 pF @ 50 V - Through Hole - -55°C ~ 150°C (TJ) 114W (Tc) - 360mOhm @ 5.5A, 10V - I-Pak - MOSFET (Metal Oxide) ±25V 4V @ 250µA
NTD110N02RST4G
NTD110N02RST4G
On Semiconductor
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 - - - 32A (Ta), 110A (Tc) - - 4.5V, 10V - - - - - - - - - - - Surface Mount - - - - - - DPAK-3 - - ±20V -
NTLJS3A18PZTWG
NTLJS3A18PZTWG
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 - - - 5A (Ta) 20 V - 1.5V, 4.5V - P-Channel - 28 nC @ 4.5 V - - - - - 2240 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 700mW (Ta) - 18mOhm @ 7A, 4.5V - 6-WDFN (2x2) - MOSFET (Metal Oxide) ±8V 1V @ 250µA
NTMFS4C59NT3G
NTMFS4C59NT3G
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 - - - 9A (Ta), 52A (Tc) 30 V - 4.5V, 10V - N-Channel - 22.2 nC @ 10 V - - - - - 1252 pF @ 15 V - Surface Mount - - - - 5.8mOhm @ 30A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2.1V @ 250µA
NTMS4503NSR2G
NTMS4503NSR2G
On Semiconductor
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 - - - - - - - - - - - - - - - - - - Surface Mount - -55°C ~ 150°C (TJ) - - - - 8-SOIC - - - -
NTR4503NST1G
NTR4503NST1G
On Semiconductor
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 - - - - - - - - - - - - - - - - - - Surface Mount - - - - - - SOT-23-3 (TO-236) - - - -
NTTFS4965NFTAG
NTTFS4965NFTAG
On Semiconductor
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 - - - 16.3A (Ta), 64A (Tc) 30 V - - - N-Channel - 29.4 nC @ 10 V - - - - - 2075 pF @ 15 V - Surface Mount - - - - 3.5mOhm @ 20A, 10V - 8-WDFN (3.3x3.3) - MOSFET (Metal Oxide) - 2.3V @ 250µA
NTTFS4965NFTWG
NTTFS4965NFTWG
On Semiconductor
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 - - - 16.3A (Ta), 64A (Tc) 30 V - - - N-Channel - 29.4 nC @ 10 V - - - - - 2075 pF @ 15 V - Surface Mount - - - - 3.5mOhm @ 20A, 10V - 8-WDFN (3.3x3.3) - MOSFET (Metal Oxide) - 2.3V @ 250µA
NTTFS4C08NTWG
NTTFS4C08NTWG
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On Semiconductor
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 - - - 9.3A (Ta) 30 V - 4.5V, 10V - N-Channel - 18.2 nC @ 10 V - - - - - 1113 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 820mW (Ta), 25.5W (Tc) - 5.9mOhm @ 30A, 10V - 8-WDFN (3.3x3.3) - MOSFET (Metal Oxide) ±20V 2.2V @ 250µA
NTTFS4C50NTWG
NTTFS4C50NTWG
On Semiconductor
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 - - - 19.4A (Ta) - - - - N-Channel - - - - - - - - - Surface Mount - - - - - - 8-WDFN (3.3x3.3) - - - -
NTTFS4C53NTAG
NTTFS4C53NTAG
On Semiconductor
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 - - - - - - - - - - - - - - - - - - Surface Mount - - - - - - 8-WDFN (3.3x3.3) - - - -
NTTFS4C53NTWG
NTTFS4C53NTWG
On Semiconductor
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 - - - - - - - - - - - - - - - - - - Surface Mount - - - - - - 8-WDFN (3.3x3.3) - - - -
NTTFS4C55NTAG
NTTFS4C55NTAG
On Semiconductor
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 - - - - - - - - - - - - - - - - - - Surface Mount - - - - - - 8-WDFN (3.3x3.3) - - - -
TSM60N380CH C5G
TSM60N380CH C5G
Taiwan Semiconductor
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 - - - 11A (Tc) 600 V - 10V - N-Channel - 20.5 nC @ 10 V - - - - - 1040 pF @ 100 V - Through Hole - -55°C ~ 150°C (TJ) 125W (Tc) - 380mOhm @ 5.5A, 10V - TO-251 (IPAK) - MOSFET (Metal Oxide) ±30V 4V @ 250µA
NVTYS003N03CLTWG
NVTYS003N03CLTWG
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 - - - 23A (Ta), 98A (Tc) 30 V - 4.5V, 10V - N-Channel - 26 nC @ 10 V - - - - - 1870 pF @ 15 V - Surface Mount - -55°C ~ 175°C (TJ) 3W (Ta), 59W (Tc) - 3.6mOhm @ 30A, 10V - 8-LFPAK - MOSFET (Metal Oxide) ±20V 2.2V @ 250µA
AOB12N50L
AOB12N50L
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Alpha&Omega Semicondu Ctor
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 - - - 12A (Tc) 500 V - 10V - N-Channel - 37 nC @ 10 V - - - - - 1633 pF @ 25 V - Surface Mount - -55°C ~ 150°C (TJ) 250W (Tc) - 520mOhm @ 6A, 10V - TO-263 (D2Pak) - MOSFET (Metal Oxide) ±30V 4.5V @ 250µA
BUK7675-100A,118
BUK7675-100A,118
Download Datasheet for BUK7675-100A,118
Nexperia USA Inc.
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 - - - 23A (Tc) 100 V - 10V - N-Channel - - - - - - - 1210 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 99W (Tc) - 75mOhm @ 13A, 10V - D2PAK - MOSFET (Metal Oxide) ±20V 4V @ 1mA
TP0606N3-G-P002
TP0606N3-G-P002
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Microchip Technology
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 - - - 320mA (Tj) 60 V - 5V, 10V - P-Channel - - - - - - - 150 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 1W (Tc) - 3.5Ohm @ 750mA, 10V - TO-92-3 - MOSFET (Metal Oxide) ±20V 2.4V @ 1mA
TP0606N3-G-P003
TP0606N3-G-P003
Download Datasheet for TP0606N3-G-P003
Microchip Technology
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 - - - 320mA (Tj) 60 V - 5V, 10V - P-Channel - - - - - - - 150 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 1W (Tc) - 3.5Ohm @ 750mA, 10V - TO-92-3 - MOSFET (Metal Oxide) ±20V 2.4V @ 1mA
IRLR3110ZTRRPBF
IRLR3110ZTRRPBF
Download Datasheet for IRLR3110ZTRRPBF
Infineon Technologies
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 - - - 42A (Tc) 100 V - 4.5V, 10V - N-Channel - 48 nC @ 4.5 V - - - - - 3980 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 140W (Tc) - 14mOhm @ 38A, 10V - D-Pak - MOSFET (Metal Oxide) ±16V 2.5V @ 100µA
DMTH12H007SPSWQ-13
DMTH12H007SPSWQ-13
Diodes Incorporated
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 - - - 84A (Tc) 120 V - 6V, 10V - N-Channel - 44 nC @ 10 V - - - - - 3142 pF @ 60 V - Surface Mount, Wettable Flank - -55°C ~ 175°C (TJ) 3.5W - 8.9mOhm @ 30A, 10V - PowerDI5060-8 (Type UX) - MOSFET (Metal Oxide) ±20V 4V @ 250µA
TPH4R606NH,L1Q
TPH4R606NH,L1Q
Toshiba
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 - - - 32A (Ta) 60 V - 6.5V, 10V - N-Channel - 49 nC @ 10 V - - - - - 3965 pF @ 30 V - Surface Mount - 150°C (TJ) 1.6W (Ta), 63W (Tc) - 4.6mOhm @ 16A, 10V - 8-SOP Advance (5x5) - MOSFET (Metal Oxide) ±20V 4V @ 500µA
AOB2606L
AOB2606L
Download Datasheet for AOB2606L
Alpha&Omega Semicondu Ctor
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 - - - 13A (Ta), 72A (Tc) 60 V - 10V - N-Channel - 75 nC @ 10 V - - - - - 4050 pF @ 30 V - Surface Mount - -55°C ~ 175°C (TJ) 2.1W (Ta), 115W (Tc) - 6.2mOhm @ 20A, 10V - TO-263 (D2Pak) - MOSFET (Metal Oxide) ±20V 3.5V @ 250µA
Showing 34651-34700 of 41,316 products

About Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single are essential components in the realm of discrete semiconductor products, providing critical functionality in electronic circuits. These transistors are designed to handle various electrical parameters, making them suitable for applications ranging from industrial power management to new product design and prototyping.

When sourcing FETs and MOSFETs, it is crucial to compare key specifications such as Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). Understanding these attributes will help ensure that the selected components meet the specific requirements of your application.

Applications for these transistors include production electronics assembly, maintenance and field replacement, as well as engineering evaluation and qualification. They are vital in ensuring reliable performance in various electronic systems.

Buyers should prioritize parametric filtering to reduce sourcing risk and confirm mechanical and electrical compatibility with existing design constraints. It is advisable to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

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