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Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single facilitate the control of electrical signals in various electronic applications. Key attributes include Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). These components are essential for industrial power management and new product design.

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What are Transistors - FETs, MOSFETs - Single ?

Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.

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Part & Mfr Total Stock Pricing & RFQ Avalanche Current Continuous Drain Current Continuous Drain Current (Id) Current Drain to Source Voltage (Vdss) Drive Voltage Drive Voltage (Max Rds On, Min Rds On) FET Feature FET Type Gate Charge (Qg) Gate Charge (Qg) (Max) @ Vgs Gate Threshold Voltage (Vgs(th)) Gate Threshold Voltage (Vgs(th)) (Max) @ Id Gate-Source Voltage (Vgs) Halogen Free Input Capacitance (Ciss) Input Capacitance (Ciss) (Max) @ Vds Lead Spacing Mounting Type On-Resistance (Rds On) Operating Temperature Power Dissipation (Max) Pulsed Drain Current Rds On (Max) @ Id, Vgs Storage Temperature Supplier Device Package Tape & Reel Technology Vgs (Max) Vgs(th) (Max) @ Id
PMZ290UNEYL
PMZ290UNEYL
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Nexperia USA Inc.
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 - - - 1A (Ta) 20 V - 1.8V, 4.5V - N-Channel - 0.68 nC @ 4.5 V - - - - - 83 pF @ 10 V - Surface Mount - -55°C ~ 150°C (TJ) 360mW (Ta), 2.7W (Tc) - 380mOhm @ 500mA, 4.5V - SOT-883 - MOSFET (Metal Oxide) ±8V 950mV @ 250µA
NVMFS5C423NLT1G
NVMFS5C423NLT1G
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 - - - 150A (Tc) 40 V - 4.5V, 10V - N-Channel - 50 nC @ 10 V - - - - - 3100 pF @ 20 V - Surface Mount - -55°C ~ 175°C (TJ) 3.7W (Ta), 83W (Tc) - 2mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
NVMFS5C670NLT3G
NVMFS5C670NLT3G
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 - - - 17A (Ta), 71A (Tc) 60 V - 4.5V, 10V - N-Channel - 20 nC @ 10 V - - - - - 1400 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.6W (Ta), 61W (Tc) - 6.1mOhm @ 35A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
2SK4196LS-1E
2SK4196LS-1E
On Semiconductor
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 - - - 5A (Tc) 500 V - 10V - N-Channel - 14.6 nC @ 10 V - - - - - 360 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 30W (Tc) - 1.56Ohm @ 2.8A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
3LP01C-TB-E
3LP01C-TB-E
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 - - - 100mA (Ta) 30 V - 1.5V, 4V - P-Channel - 1.43 nC @ 10 V - - - - - 7.5 pF @ 10 V - Surface Mount - 150°C (TJ) 250mW (Ta) - 10.4Ohm @ 50mA, 4V - SC-59-3/CP3 - MOSFET (Metal Oxide) ±10V -
BBL4001-1E
BBL4001-1E
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On Semiconductor
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 - - - 74A (Ta) 60 V - 4V, 10V - N-Channel - 135 nC @ 10 V - - - - - 6900 pF @ 20 V - Through Hole - 150°C (TJ) 2W (Ta), 35W (Tc) - 6.1mOhm @ 37A, 10V - TO-220-3 Fullpack/TO-220F-3SG - MOSFET (Metal Oxide) ±20V 2.6V @ 1mA
ECH8315-TL-W
ECH8315-TL-W
Download Datasheet for ECH8315-TL-W
On Semiconductor
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 - - - 7.5A (Ta) 30 V - 4V, 10V - P-Channel - 18 nC @ 10 V - - - - - 875 pF @ 10 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 25mOhm @ 3.5A, 10V - SOT-28FL/ECH8 - MOSFET (Metal Oxide) ±20V 2.6V @ 1mA
MCH3475-TL-W
MCH3475-TL-W
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On Semiconductor
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 - - - 1.8A (Ta) 30 V - 4V, 10V - N-Channel - 2 nC @ 10 V - - - - - 88 pF @ 10 V - Surface Mount - 150°C (TJ) 800mW (Ta) - 180mOhm @ 900mA, 10V - SC-70FL/MCPH3 - MOSFET (Metal Oxide) ±20V 2.6V @ 1mA
MCH3477-TL-W
MCH3477-TL-W
On Semiconductor
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 - - - 4.5A (Ta) 20 V - 1.8V, 4.5V - N-Channel - 5.1 nC @ 4.5 V - - - - - 410 pF @ 10 V - Surface Mount - 150°C (TJ) 1W (Ta) - 38mOhm @ 2A, 4.5V - SC-70FL/MCPH3 - MOSFET (Metal Oxide) ±12V 1.3V @ 1mA
MCH6320-TL-W
MCH6320-TL-W
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 - - - 3.5A (Ta) 12 V - 1.8V, 4.5V - P-Channel - 5.6 nC @ 4.5 V - - - - - 405 pF @ 6 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 70mOhm @ 1.5A, 4.5V - SC-88FL/MCPH6 - MOSFET (Metal Oxide) ±10V 1.4V @ 1mA
MCH6336-TL-W
MCH6336-TL-W
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On Semiconductor
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 - - - 5A (Ta) 12 V - 1.8V, 4.5V - P-Channel - 6.9 nC @ 4.5 V - - - - - 660 pF @ 6 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 43mOhm @ 3A, 4.5V - SC-88FL/MCPH6 - MOSFET (Metal Oxide) ±10V 1.4V @ 1mA
MCH6436-TL-W
MCH6436-TL-W
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 - - - 6A (Ta) 30 V - 1.8V, 4.5V - N-Channel - 7.5 nC @ 4.5 V - - - - - 710 pF @ 10 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 34mOhm @ 3A, 4.5V - SC-88FL/MCPH6 - MOSFET (Metal Oxide) ±12V 1.3V @ 1mA
MCH6437-TL-W
MCH6437-TL-W
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 - - - 7A (Ta) 20 V - 1.8V, 4.5V - N-Channel - 8.4 nC @ 4.5 V - - - - - 660 pF @ 10 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 24mOhm @ 4A, 4.5V - SC-88FL/MCPH6 - MOSFET (Metal Oxide) ±12V 1.3V @ 1mA
MCH6448-TL-W
MCH6448-TL-W
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 - - - 8A (Ta) 20 V - 1.2V, 4.5V - N-Channel - 11.2 nC @ 4.5 V - - - - - 705 pF @ 10 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 22mOhm @ 4A, 4.5V - SC-88FL/MCPH6 - MOSFET (Metal Oxide) ±9V 1V @ 1mA
NDBA100N10BT4H
NDBA100N10BT4H
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On Semiconductor
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 - - - 100A (Ta) 100 V - 10V, 15V - N-Channel - 35 nC @ 10 V - - - - - 2950 pF @ 50 V - Surface Mount - 175°C (TJ) 110W (Tc) - 6.9mOhm @ 50A, 15V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±20V 4V @ 1mA
NDBA170N06AT4H
NDBA170N06AT4H
On Semiconductor
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 - - - 170A (Ta) 60 V - 10V - N-Channel - 280 nC @ 10 V - - - - - 15800 pF @ 20 V - Surface Mount - 150°C (TJ) 90W (Tc) - 3.3mOhm @ 50A, 10V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±20V 2.6V @ 1mA
NDBA180N10BT4H
NDBA180N10BT4H
On Semiconductor
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 - - - 180A (Ta) 100 V - 10V, 15V - N-Channel - 95 nC @ 10 V - - - - - 6950 pF @ 50 V - Surface Mount - 175°C (TJ) 200W (Tc) - 2.8mOhm @ 50A, 15V - D²PAK (TO-263) - MOSFET (Metal Oxide) ±20V 4V @ 1mA
NDD60N745U1-35G
NDD60N745U1-35G
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 - - - 6.6A (Tc) 600 V - 10V - N-Channel - 15 nC @ 10 V - - - - - 440 pF @ 50 V - Through Hole - -55°C ~ 150°C (TJ) 84W (Tc) - 745mOhm @ 3.25A, 10V - I-PAK - MOSFET (Metal Oxide) ±25V 4V @ 250µA
NDD60N745U1T4G
NDD60N745U1T4G
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 - - - 6.6A (Tc) 600 V - 10V - N-Channel - 15 nC @ 10 V - - - - - 440 pF @ 50 V - Surface Mount - -55°C ~ 150°C (TJ) 84W (Tc) - 745mOhm @ 3.25A, 10V - DPAK - MOSFET (Metal Oxide) ±25V 4V @ 250µA
NDD60N900U1-1G
NDD60N900U1-1G
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 - - - 5.7A (Tc) 600 V - 10V - N-Channel - 12 nC @ 10 V - - - - - 360 pF @ 50 V - Through Hole - -55°C ~ 150°C (TJ) 74W (Tc) - 900mOhm @ 2.5A, 10V - I-PAK - MOSFET (Metal Oxide) ±25V 4V @ 250µA
NDD60N900U1-35G
NDD60N900U1-35G
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 - - - 5.7A (Tc) 600 V - 10V - N-Channel - 12 nC @ 10 V - - - - - 360 pF @ 50 V - Through Hole - -55°C ~ 150°C (TJ) 74W (Tc) - 900mOhm @ 2.5A, 10V - I-PAK - MOSFET (Metal Oxide) ±25V 4V @ 250µA
NDD60N900U1T4G
NDD60N900U1T4G
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 - - - 5.7A (Tc) 600 V - 10V - N-Channel - 12 nC @ 10 V - - - - - 360 pF @ 50 V - Surface Mount - -55°C ~ 150°C (TJ) 74W (Tc) - 900mOhm @ 2.5A, 10V - DPAK - MOSFET (Metal Oxide) ±25V 4V @ 250µA
NDF04N60ZG-001
NDF04N60ZG-001
On Semiconductor
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 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
NDF06N60ZG-001
NDF06N60ZG-001
On Semiconductor
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 - - - - - - 10V - - - - - - - - - - - - - - - - - - - - - ±30V -
NDF10N60ZG-001
NDF10N60ZG-001
On Semiconductor
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 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
NTMFS4C06NAT1G
NTMFS4C06NAT1G
On Semiconductor
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 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
NTMFS4C10NAT1G
NTMFS4C10NAT1G
On Semiconductor
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NTMFS4C13NT3G
NTMFS4C13NT3G
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 - - - 7.2A (Ta), 38A (Tc) 30 V - 4.5V, 10V - N-Channel - 15.2 nC @ 10 V - - - - - 770 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 750mW (Ta) - 9.1mOhm @ 30A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2.1V @ 250µA
NTMFS4C705NT1G
NTMFS4C705NT1G
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 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
NTMFS5C612NLWFT1G
NTMFS5C612NLWFT1G
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 - - - 235A (Tc) 60 V - 4.5V, 10V - N-Channel - 41 nC @ 4.5 V - - - - - 6660 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.8W (Ta), 167W (Tc) - 1.5mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
NTTFS4C25NTWG
NTTFS4C25NTWG
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 - - - 5A (Ta), 27A (Tc) 30 V - 4.5V, 10V - N-Channel - 10.3 nC @ 10 V - - - - - 500 pF @ 15 V - Surface Mount - -55°C ~ 150°C (TJ) 690mW (Ta), 20.2W (Tc) - 17mOhm @ 10A, 10V - 8-WDFN (3.3x3.3) - MOSFET (Metal Oxide) ±20V 2.2V @ 250µA
NVMFS5C404NT3G
NVMFS5C404NT3G
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 - - - 53A (Ta), 378A (Tc) 40 V - 10V - N-Channel - 128 nC @ 10 V - - - - - 8400 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.9W (Ta), 200W (Tc) - 0.7mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 4V @ 250µA
NVMFS5C404NWFT1G
NVMFS5C404NWFT1G
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 - - - 53A (Ta), 378A (Tc) 40 V - 10V - N-Channel - 128 nC @ 10 V - - - - - 8400 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.9W (Ta), 200W (Tc) - 0.7mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 4V @ 250µA
NVMFS5C404NWFT3G
NVMFS5C404NWFT3G
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 - - - 53A (Ta), 378A (Tc) 40 V - 10V - N-Channel - 128 nC @ 10 V - - - - - 8400 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.9W (Ta), 200W (Tc) - 0.7mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 4V @ 250µA
NVMFS5C423NLT3G
NVMFS5C423NLT3G
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 - - - 31A (Ta), 150A (Tc) 40 V - 4.5V, 10V - N-Channel - 50 nC @ 10 V - - - - - 3100 pF @ 20 V - Surface Mount - -55°C ~ 175°C (TJ) 3.7W (Ta), 83W (Tc) - 2mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
NVMFS5C423NLWFT1G
NVMFS5C423NLWFT1G
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 - - - 31A (Ta), 150A (Tc) 40 V - 4.5V, 10V - N-Channel - 50 nC @ 10 V - - - - - 3100 pF @ 20 V - Surface Mount - -55°C ~ 175°C (TJ) 3.7W (Ta), 83W (Tc) - 2mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
NVMFS5C423NLWFT3G
NVMFS5C423NLWFT3G
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 - - - 31A (Ta), 150A (Tc) 40 V - 4.5V, 10V - N-Channel - 50 nC @ 10 V - - - - - 3100 pF @ 20 V - Surface Mount - -55°C ~ 175°C (TJ) 3.7W (Ta), 83W (Tc) - 2mOhm @ 50A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
NVMFS5C670NLWFT1G
NVMFS5C670NLWFT1G
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 - - - 17A (Ta), 71A (Tc) 60 V - 4.5V, 10V - N-Channel - 20 nC @ 10 V - - - - - 1400 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.6W (Ta), 61W (Tc) - 6.1mOhm @ 35A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
NVMFS5C670NLWFT3G
NVMFS5C670NLWFT3G
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 - - - 17A (Ta), 71A (Tc) 60 V - 4.5V, 10V - N-Channel - 20 nC @ 10 V - - - - - 1400 pF @ 25 V - Surface Mount - -55°C ~ 175°C (TJ) 3.6W (Ta), 61W (Tc) - 6.1mOhm @ 35A, 10V - 5-DFN (5x6) (8-SOFL) - MOSFET (Metal Oxide) ±20V 2V @ 250µA
SFT1431-TL-W
SFT1431-TL-W
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 - - - 11A (Ta) 35 V - 4V, 10V - N-Channel - 17.3 nC @ 10 V - - - - - 960 pF @ 20 V - Surface Mount - 150°C (TJ) 1W (Ta), 15W (Tc) - 25mOhm @ 5.5A, 10V - DPAK/TP-FA - MOSFET (Metal Oxide) ±20V 2.6V @ 1mA
SFT1431-W
SFT1431-W
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 - - - 11A (Ta) 35 V - 4V, 10V - N-Channel - 17.3 nC @ 10 V - - - - - 960 pF @ 20 V - Through Hole - 150°C (TJ) 1W (Ta), 15W (Tc) - 25mOhm @ 5.5A, 10V - IPAK/TP - MOSFET (Metal Oxide) ±20V 2.6V @ 1mA
IPA60R330P6XKSA1
IPA60R330P6XKSA1
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Infineon Technologies
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 - - - 12A (Tc) 600 V - 10V - N-Channel - 22 nC @ 10 V - - - - - 1010 pF @ 100 V - Through Hole - -55°C ~ 150°C (TJ) 32W (Tc) - 330mOhm @ 4.5A, 10V - PG-TO220-FP - MOSFET (Metal Oxide) ±20V 4.5V @ 370µA
IPP60R230P6XKSA1
IPP60R230P6XKSA1
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Infineon Technologies
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 - - - 16.8A (Tc) 600 V - 10V - N-Channel - 31 nC @ 10 V - - - - - 1450 pF @ 100 V - Through Hole - -55°C ~ 150°C (TJ) 126W (Tc) - 230mOhm @ 6.4A, 10V - PG-TO220-3 - MOSFET (Metal Oxide) ±20V 4.5V @ 530µA
IPP60R380P6XKSA1
IPP60R380P6XKSA1
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Infineon Technologies
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 - - - 10.6A (Tc) 600 V - 10V - N-Channel - 19 nC @ 10 V - - - - - 877 pF @ 100 V - Through Hole - -55°C ~ 150°C (TJ) 83W (Tc) - 380mOhm @ 3.8A, 10V - PG-TO220-3 - MOSFET (Metal Oxide) ±20V 4.5V @ 320µA
IPW60R230P6FKSA1
IPW60R230P6FKSA1
Download Datasheet for IPW60R230P6FKSA1
Infineon Technologies
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 - - - 16.8A (Tc) 600 V - 10V - N-Channel - 31 nC @ 10 V - - - - - 1450 pF @ 100 V - Through Hole - -55°C ~ 150°C (TJ) 126W (Tc) - 230mOhm @ 6.4A, 10V - PG-TO247-3 - MOSFET (Metal Oxide) ±20V 4.5V @ 530µA
IPW60R330P6FKSA1
IPW60R330P6FKSA1
Download Datasheet for IPW60R330P6FKSA1
Infineon Technologies
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 - - - 12A (Tc) 600 V - 10V - N-Channel - 22 nC @ 10 V - - - - - 1010 pF @ 100 V - Through Hole - -55°C ~ 150°C (TJ) 93W (Tc) - 330mOhm @ 4.5A, 10V - PG-TO247-3 - MOSFET (Metal Oxide) ±20V 4.5V @ 370µA
IPL60R255P6AUMA1
IPL60R255P6AUMA1
Download Datasheet for IPL60R255P6AUMA1
Infineon Technologies
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 - - - 15.9A (Tc) 600 V - 10V - N-Channel - 31 nC @ 10 V - - - - - 1450 pF @ 100 V - Surface Mount - -40°C ~ 150°C (TJ) 126W (Tc) - 255mOhm @ 6.4A, 10V - PG-VSON-4 - MOSFET (Metal Oxide) ±20V 4.5V @ 530µA
GA100JT12-227
GA100JT12-227
Download Datasheet for GA100JT12-227
GeneSiC Semiconductor
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 - - - 160A (Tc) 1200 V - - - - - - - - - - - 14400 pF @ 800 V - Chassis Mount - -55°C ~ 175°C (TJ) 535W (Tc) - 10mOhm @ 100A - SOT-227 - SiC (Silicon Carbide Junction Transistor) - -
GA20SICP12-247
GA20SICP12-247
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GeneSiC Semiconductor
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 - - - 45A (Tc) 1200 V - - - - - - - - - - - 3091 pF @ 800 V - Through Hole - -55°C ~ 175°C (TJ) 282W (Tc) - 50mOhm @ 20A - TO-247AB - SiC (Silicon Carbide Junction Transistor) - -
GA50JT12-263
GA50JT12-263
GeneSiC Semiconductor
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Showing 33751-33800 of 41,316 products

About Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single are essential components in the realm of discrete semiconductor products, providing critical functionality in electronic circuits. These transistors are designed to handle various electrical parameters, making them suitable for applications ranging from industrial power management to new product design and prototyping.

When sourcing FETs and MOSFETs, it is crucial to compare key specifications such as Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). Understanding these attributes will help ensure that the selected components meet the specific requirements of your application.

Applications for these transistors include production electronics assembly, maintenance and field replacement, as well as engineering evaluation and qualification. They are vital in ensuring reliable performance in various electronic systems.

Buyers should prioritize parametric filtering to reduce sourcing risk and confirm mechanical and electrical compatibility with existing design constraints. It is advisable to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

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