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Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single facilitate the control of electrical signals in various electronic applications. Key attributes include Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). These components are essential for industrial power management and new product design.

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What are Transistors - FETs, MOSFETs - Single ?

Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.

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Part & Mfr Total Stock Pricing & RFQ Avalanche Current Continuous Drain Current Continuous Drain Current (Id) Current Drain to Source Voltage (Vdss) Drive Voltage Drive Voltage (Max Rds On, Min Rds On) FET Feature FET Type Gate Charge (Qg) Gate Charge (Qg) (Max) @ Vgs Gate Threshold Voltage (Vgs(th)) Gate Threshold Voltage (Vgs(th)) (Max) @ Id Gate-Source Voltage (Vgs) Halogen Free Input Capacitance (Ciss) Input Capacitance (Ciss) (Max) @ Vds Lead Spacing Mounting Type On-Resistance (Rds On) Operating Temperature Power Dissipation (Max) Pulsed Drain Current Rds On (Max) @ Id, Vgs Storage Temperature Supplier Device Package Tape & Reel Technology Vgs (Max) Vgs(th) (Max) @ Id
PSMN1R6-60CLJ
PSMN1R6-60CLJ
Nexperia USA Inc.
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PSMN2R1-60CSJ
PSMN2R1-60CSJ
Nexperia USA Inc.
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2N7002WST1G
2N7002WST1G
On Semiconductor
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 - - - 310mA (Ta) - - 4.5V, 10V - - - - - - - - - - - Surface Mount - -55°C ~ 150°C (TJ) - - - - SC-70-3 (SOT323) - - ±20V -
2SJ652-1E
2SJ652-1E
On Semiconductor
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 - - - 28A (Ta) 60 V - 4V, 10V - P-Channel - 80 nC @ 10 V - - - - - 4360 pF @ 20 V - Through Hole - 150°C (TJ) 2W (Ta), 30W (Tc) - 38mOhm @ 14A, 10V - TO-220F-3SG - MOSFET (Metal Oxide) ±20V -
2SK3703-1E
2SK3703-1E
On Semiconductor
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 - - - 30A (Ta) 60 V - 4V, 10V - N-Channel - 40 nC @ 10 V - - - - - 1780 pF @ 20 V - Through Hole - 150°C (TJ) 2W (Ta), 25W (Tc) - 26mOhm @ 15A, 10V - TO-220F-3SG - MOSFET (Metal Oxide) ±20V -
2SK3707-1E
2SK3707-1E
On Semiconductor
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 - - - 20A (Ta) 100 V - 4V, 10V - N-Channel - 44 nC @ 10 V - - - - - 2150 pF @ 20 V - Through Hole - 150°C (TJ) 2W (Ta), 25W (Tc) - 60mOhm @ 10A, 10V - TO-220F-3SG - MOSFET (Metal Oxide) ±20V -
2SK3745LS-1E
2SK3745LS-1E
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 - - - 2A (Ta) 1500 V - 10V - N-Channel - 37.5 nC @ 10 V - - - - - 380 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 35W (Tc) - 13Ohm @ 1A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±20V -
2SK3746-1E
2SK3746-1E
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 - - - 2A (Ta) 1500 V - 10V - N-Channel - 37.5 nC @ 10 V - - - - - 380 pF @ 30 V - Through Hole - 150°C (TJ) 2.5W (Ta), 110W (Tc) - 13Ohm @ 1A, 10V - TO-3P-3L - MOSFET (Metal Oxide) ±20V -
2SK3748-1E
2SK3748-1E
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On Semiconductor
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 - - - 4A (Ta) 1500 V - 10V - N-Channel - 80 nC @ 10 V - - - - - 790 pF @ 30 V - Through Hole - 150°C (TJ) 3W (Ta), 65W (Tc) - 7Ohm @ 2A, 10V - TO-3PF-3 - MOSFET (Metal Oxide) ±20V -
2SK3816-DL-1E
2SK3816-DL-1E
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 - - - 40A (Ta) 60 V - 4V, 10V - N-Channel - 40 nC @ 10 V - - - - - 1780 pF @ 20 V - Surface Mount - 150°C (TJ) 1.65W (Ta), 50W (Tc) - 26mOhm @ 20A, 10V - TO-263-2 - MOSFET (Metal Oxide) ±20V -
2SK3820-DL-1E
2SK3820-DL-1E
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 - - - 26A (Ta) 100 V - 4V, 10V - N-Channel - 44 nC @ 10 V - - - - - 2150 pF @ 20 V - Surface Mount - 150°C (TJ) 1.65W (Ta), 50W (Tc) - 60mOhm @ 13A, 10V - TO-263-2 - MOSFET (Metal Oxide) ±20V -
ATP212-S-TL-H
ATP212-S-TL-H
On Semiconductor
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 - - - 35A (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - ATPAK - - - -
2SK4066-1E
2SK4066-1E
On Semiconductor
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 - - - 100A (Ta) 60 V - 4V, 10V - N-Channel - 220 nC @ 10 V - - - - - 12500 pF @ 20 V - Through Hole - 150°C (TJ) 1.65W (Ta), 90W (Tc) - 4.7mOhm @ 50A, 10V - TO-262-3 - MOSFET (Metal Oxide) ±20V -
2SK4066-DL-1E
2SK4066-DL-1E
On Semiconductor
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 - - - 100A (Ta) 60 V - 4V, 10V - N-Channel - 220 nC @ 10 V - - - - - 12500 pF @ 20 V - Surface Mount - 150°C (TJ) 1.65W (Ta), 90W (Tc) - 4.7mOhm @ 50A, 10V - TO-263-2 - MOSFET (Metal Oxide) ±20V -
2SK4087LS-1E
2SK4087LS-1E
On Semiconductor
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 - - - 9.2A (Tc) 600 V - 10V - N-Channel - 46 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 40W (Tc) - 610mOhm @ 7A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
2SK4088LS-1E
2SK4088LS-1E
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On Semiconductor
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 - - - 7.5A (Tc) 650 V - 10V - N-Channel - 37.6 nC @ 10 V - - - - - 1000 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 37W (Tc) - 850mOhm @ 5.5A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
2SK4099LS-1E
2SK4099LS-1E
On Semiconductor
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 - - - 6.9A (Tc) 600 V - 10V - N-Channel - 29 nC @ 10 V - - - - - 750 pF @ 30 V - Through Hole - 150°C (TJ) 2W (Ta), 35W (Tc) - 940mOhm @ 4A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
2SK4124-1E
2SK4124-1E
On Semiconductor
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 - - - 20A (Ta) 500 V - 10V - N-Channel - 46.6 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - 150°C (TJ) 2.5W (Ta), 170W (Tc) - 430mOhm @ 8A, 10V - TO-3P-3L - MOSFET (Metal Oxide) ±30V -
2SK4125-1E
2SK4125-1E
On Semiconductor
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 - - - 17A (Ta) 600 V - 10V - N-Channel - 46 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - 150°C (TJ) 2.5W (Ta), 170W (Tc) - 610mOhm @ 7A, 10V - TO-3P-3L - MOSFET (Metal Oxide) ±30V -
2SK536-MTK-TB-E
2SK536-MTK-TB-E
On Semiconductor
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 - - - 100mA (Tj) - - 10V - - - - - - - - - - - Surface Mount - 125°C (TJ) - - - - 3-CP - - ±12V -
3LN01S-K-TL-E
3LN01S-K-TL-E
On Semiconductor
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 - - - 150mA (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - SMCP - - - -
3LP01M-TL-E
3LP01M-TL-E
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On Semiconductor
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 - - - 100mA (Ta) 30 V - 1.5V, 4V - P-Channel - 1.43 nC @ 10 V - - - - - 7.5 pF @ 10 V - Surface Mount - 150°C (TJ) 150mW (Ta) - 10.4Ohm @ 50mA, 4V - MCP - MOSFET (Metal Oxide) ±10V -
3LP01S-K-TL-E
3LP01S-K-TL-E
On Semiconductor
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 - - - 100mA (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - SMCP - - - -
5LN01M-TL-E
5LN01M-TL-E
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On Semiconductor
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 - - - 100mA (Ta) 50 V - 1.5V, 4V - N-Channel - 1.57 nC @ 10 V - - - - - 6.6 pF @ 10 V - Surface Mount - 150°C (TJ) 150mW (Ta) - 7.8Ohm @ 50mA, 4V - MCP - MOSFET (Metal Oxide) ±10V -
5LN01SP
5LN01SP
On Semiconductor
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 - - - 100mA (Ta) 50 V - 1.5V, 4V - N-Channel - 1.57 nC @ 10 V - - - - - 6.6 pF @ 10 V - Through Hole - 150°C (TJ) 250mW (Ta) - 7.8Ohm @ 50mA, 4V - 3-SPA - MOSFET (Metal Oxide) ±10V 1.3V @ 100µA
5LP01M-TL-E
5LP01M-TL-E
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 - - - 70mA (Ta) 50 V - 1.5V, 4V - P-Channel - 1.4 nC @ 10 V - - - - - 7.4 pF @ 10 V - Surface Mount - 150°C (TJ) 150mW (Ta) - 23Ohm @ 40mA, 4V - MCP - MOSFET (Metal Oxide) ±10V -
5LP01M-TL-HX
5LP01M-TL-HX
On Semiconductor
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 - - - 70mA (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - MCP - - - -
5LP01SP
5LP01SP
On Semiconductor
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 - - - 70mA (Ta) 50 V - 1.5V, 4V - P-Channel - 1.4 nC @ 10 V - - - - - 7.4 pF @ 10 V - Through Hole - 150°C (TJ) 250mW (Ta) - 23Ohm @ 40mA, 4V - 3-SPA - MOSFET (Metal Oxide) ±10V -
5LP01SP-AC
5LP01SP-AC
On Semiconductor
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 - - - 70mA (Ta) 50 V - 1.5V, 4V - P-Channel - 1.4 nC @ 10 V - - - - - 7.4 pF @ 10 V - Through Hole - 150°C (TJ) 250mW (Ta) - 23Ohm @ 40mA, 4V - 3-SPA - MOSFET (Metal Oxide) ±10V -
ATP101-V-TL-H
ATP101-V-TL-H
On Semiconductor
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 - - - 25A (Tj) - - - - P-Channel - - - - - - - - - Surface Mount - 150°C (TJ) - - - - ATPAK - - - -
ATP201-V-TL-H
ATP201-V-TL-H
On Semiconductor
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 - - - 35A (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - ATPAK - - - -
ATP207-S-TL-H
ATP207-S-TL-H
On Semiconductor
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 - - - 65A (Tj) - - - - - - - - - - - - - - Surface Mount - 150°C (TJ) - - - - ATPAK - - - -
ATP401-TL-H
ATP401-TL-H
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 - - - 100A (Ta) 60 V - 4.5V, 10V - N-Channel - 300 nC @ 10 V - - - - - 17000 pF @ 20 V - Surface Mount - 150°C (TJ) 90W (Tc) - 3.7mOhm @ 50A, 10V - ATPAK - MOSFET (Metal Oxide) ±20V -
BFL4001-1E
BFL4001-1E
On Semiconductor
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 - - - 4.1A (Tc) 900 V - 10V - N-Channel - 44 nC @ 10 V - - - - - 850 pF @ 30 V - Through Hole - -55°C ~ 150°C (TJ) 2W (Ta), 37W (Tc) - 2.7Ohm @ 3.25A, 10V - TO-220-3 Fullpack/TO-220F-3SG - MOSFET (Metal Oxide) ±30V -
BFL4004-1E
BFL4004-1E
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 - - - 4.3A (Tc) 800 V - 10V - N-Channel - 36 nC @ 10 V - - - - - 710 pF @ 30 V - Through Hole - -55°C ~ 150°C (TJ) 2W (Ta), 36W (Tc) - 2.5Ohm @ 3.25A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
BFL4007-1E
BFL4007-1E
On Semiconductor
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 - - - 8.7A (Tc) 600 V - 10V - N-Channel - 46 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - -55°C ~ 150°C (TJ) 2W (Ta), 40W (Tc) - 680mOhm @ 7A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
BFL4036-1E
BFL4036-1E
On Semiconductor
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 - - - 9.6A (Tc) 500 V - 10V - N-Channel - 38.4 nC @ 10 V - - - - - 1000 pF @ 30 V - Through Hole - -55°C ~ 150°C (TJ) 2W (Ta), 37W (Tc) - 520mOhm @ 7A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
BFL4037-1E
BFL4037-1E
On Semiconductor
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 - - - 11A (Tc) 500 V - 10V - N-Channel - 48.6 nC @ 10 V - - - - - 1200 pF @ 30 V - Through Hole - -55°C ~ 150°C (TJ) 2W (Ta), 40W (Tc) - 430mOhm @ 8A, 10V - TO-220F-3FS - MOSFET (Metal Oxide) ±30V -
BMS3003-1E
BMS3003-1E
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On Semiconductor
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 - - - 78A (Ta) 60 V - 4V, 10V - P-Channel - 285 nC @ 10 V - - - - - 13200 pF @ 20 V - Through Hole - -55°C ~ 150°C (TJ) 2W (Ta), 40W (Tc) - 6.5mOhm @ 39A, 10V - TO-220F-3SG - MOSFET (Metal Oxide) ±20V -
BMS3004-1E
BMS3004-1E
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 - - - 68A (Ta) 75 V - 4V, 10V - P-Channel - 300 nC @ 10 V - - - - - 13400 pF @ 20 V - Through Hole - -55°C ~ 150°C (TJ) 2W (Ta), 40W (Tc) - 8.5mOhm @ 34A, 10V - TO-220F-3SG - MOSFET (Metal Oxide) ±20V -
MCH3333A-TL-H
MCH3333A-TL-H
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 - - - 2A (Ta) 30 V - 1.8V, 4V - P-Channel - 2.8 nC @ 4 V - - - - - 240 pF @ 10 V - Surface Mount - - 900mW (Ta) - 215mOhm @ 1A, 4V - SC-70FL/MCPH3 - MOSFET (Metal Oxide) ±10V -
MCH3377-S-TL-E
MCH3377-S-TL-E
On Semiconductor
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MCH3478-S-TL-H
MCH3478-S-TL-H
On Semiconductor
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 - - - 2A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 3-MCPH - - - -
MCH3486-TL-H
MCH3486-TL-H
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On Semiconductor
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 - - - 2A (Ta) 60 V - 4V, 10V - N-Channel - 7 nC @ 10 V - - - - - 310 pF @ 20 V - Surface Mount - 150°C (TJ) 1W (Ta) - 137mOhm @ 1A, 10V - SC-70FL/MCPH3 - MOSFET (Metal Oxide) ±20V -
MCH6321-TL-W
MCH6321-TL-W
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 - - - 4A (Ta) 20 V - 1.8V, 4.5V - P-Channel - 4.6 nC @ 4.5 V - - - - - 375 pF @ 10 V - Surface Mount - 150°C (TJ) 1.5W (Ta) - 83mOhm @ 2A, 4.5V - 6-MCPH - MOSFET (Metal Oxide) ±10V -
MCH6336-P-TL-E
MCH6336-P-TL-E
On Semiconductor
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 - - - 5A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 6-MCPH - - - -
MCH6336-S-TL-E
MCH6336-S-TL-E
On Semiconductor
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 - - - 5A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 6-MCPH - - - -
MCH6431-P-TL-H
MCH6431-P-TL-H
On Semiconductor
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 - - - 5A (Tj) - - - - - - - - - - - - - - Surface Mount - - - - - - 6-MCPH - - - -
MMBFV170LT3G
MMBFV170LT3G
On Semiconductor
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 - - - - - - - - - - - - - - - - - - Surface Mount - - - - - - SOT-23-3 (TO-236) - - - -
NDD01N60-1G
NDD01N60-1G
On Semiconductor
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 - - - 1.5A (Tc) 600 V - 10V - N-Channel - 7.2 nC @ 10 V - - - - - 160 pF @ 25 V - Through Hole - -55°C ~ 150°C (TJ) 46W (Tc) - 8.5Ohm @ 200mA, 10V - I-Pak - MOSFET (Metal Oxide) ±30V 3.7V @ 50µA
Showing 32951-33000 of 41,316 products

About Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single are essential components in the realm of discrete semiconductor products, providing critical functionality in electronic circuits. These transistors are designed to handle various electrical parameters, making them suitable for applications ranging from industrial power management to new product design and prototyping.

When sourcing FETs and MOSFETs, it is crucial to compare key specifications such as Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). Understanding these attributes will help ensure that the selected components meet the specific requirements of your application.

Applications for these transistors include production electronics assembly, maintenance and field replacement, as well as engineering evaluation and qualification. They are vital in ensuring reliable performance in various electronic systems.

Buyers should prioritize parametric filtering to reduce sourcing risk and confirm mechanical and electrical compatibility with existing design constraints. It is advisable to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

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