What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba
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61.8A (Ta) | 600 V | 10V | - | N-Channel | 135 nC @ 10 V | 6500 pF @ 300 V | Through Hole | 150°C | 400W (Tc) | 40mOhm @ 21A, 10V | TO-247-4L(T) | MOSFET (Metal Oxide) | ±30V | 3.5V @ 3.1mA | |
IXYS
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10A (Tc) | 1000 V | 10V | Depletion Mode | N-Channel | 200 nC @ 5 V | 5320 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 695W (Tc) | 1.5Ohm @ 5A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±20V | - | |
IXYS
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85A (Tc) | 600 V | 10V | - | N-Channel | 650 nC @ 10 V | - | Through Hole | -55°C ~ 150°C (TJ) | - | 36mOhm @ 55A, 10V | TO-264AA | MOSFET (Metal Oxide) | ±20V | 4V @ 4mA | |
IXYS
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180A (Tc) | 200 V | 10V | - | N-Channel | 154 nC @ 10 V | 10300 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 780W (Tc) | 7.5mOhm @ 90A, 10V | TO-268HV (IXFT) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 4mA | |
IXYS
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80A (Tc) | 600 V | 10V | - | N-Channel | 190 nC @ 10 V | 13100 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1300W (Tc) | 70mOhm @ 500mA, 10V | TO-264AA (IXFK) | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
IXYS
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100A (Tc) | 650 V | 10V | - | N-Channel | 180 nC @ 10 V | 11300 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1040W (Tc) | 30mOhm @ 50A, 10V | TO-264 | MOSFET (Metal Oxide) | ±30V | 5.5V @ 4mA | |
IXYS
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1A (Tc) | 1700 V | 10V | Depletion Mode | N-Channel | 47 nC @ 5 V | 3090 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 290W (Tc) | 16Ohm @ 500mA, 0V | TO-263HV | MOSFET (Metal Oxide) | ±20V | - | |
IXYS
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36A (Tc) | 600 V | 10V | - | N-Channel | 200 nC @ 10 V | 12000 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 105mOhm @ 32A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
On Semiconductor
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- | - | - | - | - | - | - | Surface Mount | - | - | - | 5-DFN (5x6) (8-SOFL) | - | - | - | |
IXYS
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68A (Tc) | 200 V | 10V | - | P-Channel | 380 nC @ 10 V | 33400 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 568W (Tc) | 55mOhm @ 34A, 10V | TO-268AA | MOSFET (Metal Oxide) | ±15V | 4V @ 250µA | |
Microchip Technology
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49A (Tc) | 800 V | 10V | - | N-Channel | 305 nC @ 10 V | 9330 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1135W (Tc) | 200mOhm @ 24A, 10V | TO-264 [L] | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
IXYS
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170A (Tc) | 250 V | 10V | - | N-Channel | 190 nC @ 10 V | 13500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 960W (Tc) | 7.4mOhm @ 85A, 10V | TO-264AA | MOSFET (Metal Oxide) | ±20V | 4.5V @ 4mA | |
IXYS
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30A (Tc) | 600 V | 10V | - | N-Channel | 335 nC @ 10 V | 10700 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 540W (Tc) | 240mOhm @ 15A, 10V | TO-268AA | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
Microchip Technology
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37A (Tc) | 1000 V | 10V | - | N-Channel | 305 nC @ 10 V | 9835 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1135W (Tc) | 330mOhm @ 18A, 10V | TO-264 | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
Infineon Technologies
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52A (Tc) | 1200 V | 15V | Current Sensing | N-Channel | 52 nC @ 15 V | 1900 pF @ 800 V | Through Hole | -55°C ~ 175°C (TJ) | 228W (Tc) | 59mOhm @ 20A, 15V | PG-TO247-4-1 | SiCFET (Silicon Carbide) | +20V, -10V | 5.7V @ 10mA | |
Infineon Technologies
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52A (Tc) | 1200 V | 15V | - | N-Channel | 52 nC @ 15 V | 1900 pF @ 800 V | Through Hole | -55°C ~ 175°C (TJ) | 228W (Tc) | 59mOhm @ 20A, 15V | PG-TO247-3-41 | SiCFET (Silicon Carbide) | +20V, -10V | 5.7V @ 10mA | |
IXYS
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140A (Tc) | 300 V | 10V | - | N-Channel | 185 nC @ 10 V | 14800 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1040W (Tc) | 24mOhm @ 70A, 10V | PLUS247™-3 | MOSFET (Metal Oxide) | ±20V | 5V @ 8mA | |
IXYS
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94A (Tc) | 500 V | 10V | - | N-Channel | 220 nC @ 10 V | 13700 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1300W (Tc) | 55mOhm @ 500mA, 10V | PLUS247™-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
Texas Instruments
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IXYS
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240A (Tc) | 150 V | 10V | - | N-Channel | 195 nC @ 10 V | 8900 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 940W (Tc) | 4.4mOhm @ 120A, 10V | TO-268HV (IXTT) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
Microchip Technology
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29A (Tc) | 1200 V | 10V | - | N-Channel | 300 nC @ 10 V | 9670 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1135W (Tc) | 530mOhm @ 14A, 10V | TO-264 [L] | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
Microchip Technology
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29A (Tc) | 1200 V | 10V | - | N-Channel | 300 nC @ 10 V | 9670 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1135W (Tc) | 560mOhm @ 14A, 10V | T-MAX™ [B2] | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
IXYS
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70A (Tc) | 600 V | 10V | - | N-Channel | 190 nC @ 10 V | 6800 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | - | 45mOhm @ 44A, 10V | TO-247AD | MOSFET (Metal Oxide) | ±20V | 3.5V @ 3mA | |
IXYS
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70A (Tc) | 300 V | 10V | - | N-Channel | 185 nC @ 10 V | 14800 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 26mOhm @ 70A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±20V | 5V @ 8mA | |
IXYS
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120A (Tc) | 650 V | 10V | - | N-Channel | 240 nC @ 10 V | 13600 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1250W (Tc) | 24mOhm @ 60A, 10V | TO-264 (IXTK) | MOSFET (Metal Oxide) | ±30V | 4.5V @ 8mA | |
IXYS
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45A (Tc) | 500 V | 10V | - | N-Channel | 197 nC @ 10 V | 12700 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 360W (Tc) | 72mOhm @ 40A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
IXYS
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120A (Tc) | 650 V | 10V | - | N-Channel | 225 nC @ 10 V | 15500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1250W (Tc) | 24mOhm @ 60A, 10V | TO-264AA | MOSFET (Metal Oxide) | ±30V | 5.5V @ 8mA | |
IXYS
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110A (Tc) | 600 V | 10V | - | N-Channel | 245 nC @ 10 V | 18000 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1890W (Tc) | 56mOhm @ 55A, 10V | PLUS264™ | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
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10.3A (Ta), 54A (Tc) | 30 V | - | - | N-Channel | 24 nC @ 10 V | 1932 pF @ 15 V | Surface Mount | - | - | 5.5mOhm @ 30A, 10V | DPAK | MOSFET (Metal Oxide) | - | 2.2V @ 250µA | |
Infineon Technologies
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52A (Tc) | 1200 V | - | - | N-Channel | 57 nC @ 15 V | 2130 pF @ 800 V | Through Hole | -40°C ~ 175°C (TJ) | 228W (Tc) | 59mOhm @ 20A, 15V | PG-TO247-3 | SiCFET (Silicon Carbide) | +20V, -7V | 5.7V @ 10mA | |
IXYS
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230A (Tc) | 200 V | 10V | - | N-Channel | 378 nC @ 10 V | 28000 pF @ 25 V | Through Hole | - | 1670W (Tc) | 7.5mOhm @ 60A, 10V | PLUS247™-3 | MOSFET (Metal Oxide) | ±20V | 5V @ 8mA | |
Vishay Dale
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287A (Tc) | 200 V | 10V | - | N-Channel | 250 nC @ 10 V | 16500 pF @ 100 V | Chassis Mount | -55°C ~ 175°C (TJ) | 937W (Tc) | 4.7mOhm @ 200A, 10V | SOT-227 | MOSFET (Metal Oxide) | ±20V | 4.3V @ 1mA | |
IXYS
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88A (Tc) | 300 V | 10V | - | N-Channel | 224 nC @ 10 V | 7500 pF @ 25 V | Chassis Mount | -55°C ~ 150°C (TJ) | 600W (Tc) | 33mOhm @ 500mA, 10V | SOT-227B | MOSFET (Metal Oxide) | ±20V | 5V @ 4mA | |
IXYS
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120A (Tc) | 200 V | - | - | P-Channel | 740 nC @ 10 V | 73000 pF @ 25 V | Through Hole | - | - | 30mOhm @ 60A, 10V | PLUS247™-3 | MOSFET (Metal Oxide) | - | 4.5V @ 250µA | |
IXYS
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100A (Tc) | 500 V | 10V | - | N-Channel | 240 nC @ 10 V | 20000 pF @ 25 V | Through Hole | - | 1890W (Tc) | 49mOhm @ 50A, 10V | PLUS264™ | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
Microchip Technology
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41A (Tc) | 500 V | 10V | - | N-Channel | 96 nC @ 10 V | 4360 pF @ 25 V | Chassis Mount | -55°C ~ 150°C (TJ) | 378W (Tc) | 100mOhm @ 23A, 10V | SOT-227 | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
Infineon Technologies
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IXYS
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320A (Tc) | 170 V | 10V | - | N-Channel | 640 nC @ 10 V | 45000 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 1670W (Tc) | 5.2mOhm @ 60A, 10V | TO-264AA (IXFK) | MOSFET (Metal Oxide) | ±20V | 5V @ 8mA | |
IXYS
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300A (Tc) | 200 V | 10V | - | N-Channel | 375 nC @ 10 V | 23800 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1250W (Tc) | 4mOhm @ 150A, 10V | PLUS247™-3 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 8mA | |
IXYS
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39A (Tc) | 800 V | 10V | - | N-Channel | 200 nC @ 10 V | 12000 pF @ 25 V | Chassis Mount | -55°C ~ 150°C (TJ) | 694W (Tc) | 190mOhm @ 500mA, 10V | SOT-227B | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
IXYS
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150A (Tc) | 650 V | 10V | - | N-Channel | 430 nC @ 10 V | 20400 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1560W (Tc) | 17mOhm @ 75A, 10V | PLUS264™ | MOSFET (Metal Oxide) | ±30V | 5.5V @ 8mA | |
Microchip Technology
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18A (Tc) | 1200 V | 10V | - | N-Channel | 300 nC @ 10 V | 9670 pF @ 25 V | Chassis Mount | -55°C ~ 150°C (TJ) | 545W (Tc) | 580mOhm @ 14A, 10V | ISOTOP® | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
IXYS
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50A (Tc) | 600 V | 10V | - | N-Channel | 200 nC @ 10 V | 12000 pF @ 25 V | Chassis Mount | -55°C ~ 150°C (TJ) | 700W (Tc) | 96mOhm @ 500mA, 10V | SOT-227B | MOSFET (Metal Oxide) | ±30V | 5V @ 8mA | |
STMicroelectronics
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90A (Tc) | 650 V | 18V | - | N-Channel | 157 nC @ 18 V | 3300 pF @ 400 V | Through Hole | -55°C ~ 200°C (TJ) | 390W (Tc) | 25mOhm @ 50A, 18V | HiP247™ | SiCFET (Silicon Carbide) | +22V, -10V | 5V @ 250µA | |
Texas Instruments
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Microchip Technology
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44A (Tc) | 500 V | 10V | - | N-Channel | 312 nC @ 10 V | 7410 pF @ 25 V | Chassis Mount | -55°C ~ 150°C (TJ) | 450W (Tc) | 100mOhm @ 22A, 10V | SOT-227 | MOSFET (Metal Oxide) | ±30V | 4V @ 2.5mA | |
Microchip Technology
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126A (Tc) | 700 V | 20V | - | N-Channel | 215 nC @ 20 V | 4500 pF @ 700 V | Surface Mount | -55°C ~ 175°C (TJ) | 370W (Tc) | 19mOhm @ 40A, 20V | D3PAK | SiCFET (Silicon Carbide) | +23V, -10V | 2.4V @ 4mA | |
STMicroelectronics
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100A (Tc) | 650 V | 18V | - | N-Channel | 162 nC @ 18 V | 3315 pF @ 520 V | Through Hole | -55°C ~ 200°C (TJ) | 420W (Tc) | 26mOhm @ 50A, 18V | HiP247™ | SiCFET (Silicon Carbide) | +22V, -10V | 5V @ 5mA | |
STMicroelectronics
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65A (Tc) | 1200 V | 20V | - | N-Channel | 122 nC @ 20 V | 1900 pF @ 400 V | Through Hole | -55°C ~ 200°C (TJ) | 318W (Tc) | 69mOhm @ 40A, 20V | HiP247™ | SiCFET (Silicon Carbide) | +25V, -10V | 3V @ 1mA | |
IXYS
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64A (Tc) | 600 V | 10V | - | N-Channel | 190 nC @ 10 V | 9930 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1250W (Tc) | 95mOhm @ 32A, 10V | TO-264AA (IXFK) | MOSFET (Metal Oxide) | ±30V | 6.5V @ 4mA |