What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
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Renesas
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82A (Tc) | 40 V | - | - | N-Channel | 150 nC @ 10 V | 9 pF @ 25 V | Through Hole | 175°C (TJ) | 1.8W (Ta), 143W (Tc) | 4.2mOhm @ 41A, 10V | TO-220-3 | MOSFET (Metal Oxide) | - | 2.5V @ 250µA | |
Renesas
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82A (Tc) | 40 V | - | - | N-Channel | 150 nC @ 10 V | 9 pF @ 25 V | Through Hole | 175°C (TJ) | 1.8W (Ta), 143W (Tc) | 4.2mOhm @ 41A, 10V | TO-262-3 | MOSFET (Metal Oxide) | - | 2.5V @ 250µA | |
Renesas
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82A (Tc) | 40 V | - | - | N-Channel | 150 nC @ 10 V | 9000 pF @ 25 V | Through Hole | 175°C | 1.8W (Ta), 143W (Tc) | 4.2mOhm @ 41A, 10V | TO-262 | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Renesas
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82A (Tc) | 40 V | - | - | N-Channel | 150 nC @ 10 V | 9000 pF @ 25 V | Through Hole | 175°C | 1.8W (Ta), 143W (Tc) | 4.2mOhm @ 41A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Vishay
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13A (Tc) | 600 V | 10V | - | N-Channel | 23 nC @ 10 V | 915 pF @ 100 V | Surface Mount | -55°C ~ 150°C (TJ) | 89W (Tc) | 250mOhm @ 5.5A, 10V | PowerPAK® 8 x 8 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Toshiba
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92A (Tc) | 80 V | 6V, 10V | - | N-Channel | 102 nC @ 10 V | 7670 pF @ 40 V | Through Hole | 175°C | 45W (Tc) | 3.2mOhm @ 46A, 10V | TO-220SIS | MOSFET (Metal Oxide) | ±20V | 3.5V @ 1.3mA | |
Infineon Technologies
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220A (Tj) | 80 V | 6V, 10V | - | N-Channel | 105 nC @ 10 V | 7219 pF @ 40 V | Surface Mount | -55°C ~ 175°C (TJ) | 211W (Tc) | 2.1mOhm @ 100A, 10V | PG-HSOF-5-4 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 120µA | |
On Semiconductor
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17A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 58 nC @ 5 V | 4785 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 1W (Ta) | 5.5mOhm @ 17A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±16V | 3V @ 1mA | |
ROHM Semiconductor
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5A (Tc) | 800 V | 10V | - | N-Channel | 20 nC @ 10 V | 500 pF @ 25 V | Surface Mount | 150°C (TJ) | 120W (Tc) | 2.1Ohm @ 2.5A, 10V | TO-263S | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Infineon Technologies
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171A (Tc) | 100 V | 6V, 10V | - | N-Channel | 88 nC @ 10 V | 6500 pF @ 50 V | Surface Mount | -55°C ~ 175°C (TJ) | 188W (Tc) | 3mOhm @ 50A, 10V | PG-WSON-8-2 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 115µA | |
Harris Semiconductor
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10A (Tc) | 150 V | 5V | - | N-Channel | - | 1200 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 75W (Tc) | 300mOhm @ 5A, 5V | TO-3 | MOSFET (Metal Oxide) | ±10V | - | |
Nexperia USA Inc.
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75A (Tc) | 55 V | 4.5V, 10V | - | N-Channel | 95 nC @ 5 V | 10220 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 3.7mOhm @ 25A, 10V | D2PAK | MOSFET (Metal Oxide) | ±15V | 2V @ 1mA | |
Vishay
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19A (Tc) | 600 V | 10V | - | N-Channel | 33 nC @ 10 V | 1085 pF @ 100 V | Surface Mount | -55°C ~ 150°C (TJ) | 114W (Tc) | 185mOhm @ 9.5A, 10V | PowerPAK®10 x 12 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Infineon Technologies
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5.1A (Tc) | 900 V | 10V | - | N-Channel | 28 nC @ 10 V | 710 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 31W (Tc) | 1.2Ohm @ 2.8A, 10V | PG-TO220-FP | MOSFET (Metal Oxide) | ±20V | 3.5V @ 310µA | |
On Semiconductor
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12.6A (Tc) | 800 V | 10V | - | N-Channel | 88 nC @ 10 V | 3500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 750mOhm @ 6.3A, 10V | TO-3PN | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Renesas
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On Semiconductor
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6.5A (Tc) | 800 V | 10V | - | N-Channel | 165 nC @ 10 V | 3500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 100W (Tc) | 950mOhm @ 3A, 10V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 3.5V @ 250µA | |
Micro Commercial Co.
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80A (Tc) | 60 V | 10V | - | P-Channel | 88 nC @ 10 V | 5810 pF @ 30 V | Through Hole | -55°C ~ 150°C (TJ) | 83W | 10mOhm @ 20A, 10V | TO-220F | MOSFET (Metal Oxide) | ±18V | 4V @ 250µA | |
On Semiconductor
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11.5A (Tc) | 400 V | 10V | - | N-Channel | 131 nC @ 10 V | 2780 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 92W (Tc) | 300mOhm @ 5.75A, 10V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Infineon Technologies
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NTE Electronics
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250mA (Tj) | 200 V | 10V | - | N-Channel | - | 60 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 350mW (Ta) | - | TO-92 | MOSFET (Metal Oxide) | ±20V | 3V @ 1mA | |
Renesas
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Vishay
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16A (Tc) | 600 V | 10V | - | N-Channel | 32 nC @ 10 V | 1081 pF @ 100 V | Surface Mount | -55°C ~ 150°C (TJ) | 114W (Tc) | 193mOhm @ 9.5A, 10V | PowerPAK®10 x 12 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Renesas
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Renesas
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Renesas
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Renesas
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On Semiconductor
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22A (Tc) | 200 V | 10V | - | N-Channel | 152 nC @ 20 V | 2200 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 180W (Tc) | 125mOhm @ 22A, 10V | D2PAK (TO-263) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
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38A (Tc) | 200 V | 10V | - | N-Channel | 280 nC @ 20 V | 4023 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 310W (Tc) | 71mOhm @ 38A, 10V | TO-247AD | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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80A (Tc) | 49 V | 4.5V, 10V | - | N-Channel | 232 nC @ 10 V | 4800 pF @ 25 V | Through Hole | -40°C ~ 175°C (TJ) | 300W (Tc) | 6.5mOhm @ 36A, 10V | PG-TO220-7-12 | MOSFET (Metal Oxide) | ±20V | 2V @ 240µA | |
Renesas
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Renesas
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Infineon Technologies
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250A (Tj) | 80 V | 6V, 10V | - | N-Channel | 125 nC @ 10 V | 8715 pF @ 40 V | Surface Mount | -55°C ~ 175°C (TJ) | 238W (Tc) | 1.8mOhm @ 100A, 10V | PG-HSOF-5-4 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 150µA | |
Infineon Technologies
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87A (Tc) | 150 V | 8V, 10V | - | N-Channel | 40.7 nC @ 10 V | 3230 pF @ 75 V | Surface Mount | -55°C ~ 150°C (TJ) | 139W (Tc) | 9.3mOhm @ 44A, 10V | PG-TDSON-8-7 | MOSFET (Metal Oxide) | ±20V | 4.6V @ 107µA | |
Infineon Technologies
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17A (Tc) | 650 V | 10V | - | N-Channel | 28 nC @ 10 V | 1283 pF @ 400 V | Surface Mount | -55°C ~ 150°C (TJ) | 98W (Tc) | 160mOhm @ 6.4A, 10V | PG-VSON-4 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 320µA | |
Nexperia USA Inc.
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170A (Ta) | 80 V | 10V | - | N-Channel | 110 nC @ 10 V | 8000 pF @ 40 V | Surface Mount | -55°C ~ 175°C (TJ) | 294W (Ta) | 4.2mOhm @ 25A, 10V | LFPAK56, Power-SO8 | MOSFET (Metal Oxide) | ±20V | 3.6V @ 1mA | |
Renesas
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Renesas
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90A (Ta) | 75 V | - | - | N-Channel | 89 nC @ 10 V | 10 pF @ 10 V | Through Hole | 150°C (TJ) | 150W (Tc) | 4.8mOhm @ 45A, 10V | TO-220AB | MOSFET (Metal Oxide) | - | - | |
Infineon Technologies
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41A (Ta), 348A (Tc) | 60 V | 4.5V, 10V | - | N-Channel | 209 nC @ 10 V | 13000 pF @ 30 V | Surface Mount | -55°C ~ 175°C (TJ) | 3W (Ta), 214W (Tc) | 0.9mOhm @ 50A, 10V | PG-TSON-8-3 | MOSFET (Metal Oxide) | ±20V | 2.3V @ 147µA | |
On Semiconductor
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34A (Tc) | 300 V | 10V | - | N-Channel | 100 nC @ 10 V | 4670 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 161W (Tc) | 56mOhm @ 17A, 10V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
On Semiconductor
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11.2A (Tc) | 600 V | 10V | - | N-Channel | 90 nC @ 10 V | 3600 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 120W (Tc) | 380mOhm @ 5.6A, 10V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
On Semiconductor
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34A (Tc) | 250 V | 10V | - | N-Channel | 100 nC @ 10 V | 4640 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 115W (Tc) | 41mOhm @ 17A, 10V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Renesas
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90A (Ta) | 75 V | - | - | N-Channel | 89 nC @ 10 V | 6450 pF @ 10 V | Through Hole | 150°C (TJ) | 30W (Tc) | 4.8mOhm @ 45A, 10V | TO-220FP | MOSFET (Metal Oxide) | - | - | |
Renesas
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110A (Tc) | 55 V | 10V | - | N-Channel | 294 nC @ 10 V | 16050 pF @ 25 V | Surface Mount | 175°C (TJ) | 1.8W (Ta), 348W (Tc) | 1.75mOhm @ 55A, 10V | TO-263 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Renesas
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Infineon Technologies
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33A (Tc) | 55 V | 4.5V, 10V | - | N-Channel | 90 nC @ 10 V | 1730 pF @ 25 V | Surface Mount | -40°C ~ 175°C (TJ) | 120W (Tc) | 18mOhm @ 12A, 10V | PG-TO263-5-2 | MOSFET (Metal Oxide) | ±20V | 2V @ 90µA | |
Infineon Technologies
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210A (Tj) | 100 V | 6V, 10V | - | N-Channel | 119 nC @ 10 V | 8696 pF @ 50 V | Surface Mount | -55°C ~ 175°C (TJ) | 238W (Tc) | 2.4mOhm @ 100A, 10V | PG-HSOF-5-4 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 150µA | |
Diodes Incorporated
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215A (Tc) | 100 V | 10V | - | N-Channel | 124.4 nC @ 10 V | 8450 pF @ 50 V | Surface Mount | -55°C ~ 175°C (TJ) | 5.8W (Ta), 230.8W (Tc) | 2.5mOhm @ 30A, 10V | POWERDI1012-8 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
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70A (Tc) | 120 V | 10V | - | N-Channel | 65 nC @ 10 V | 4355 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 125W (Tc) | 11.6mOhm @ 70A, 10V | PG-TO220-3-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 83µA | |
Renesas
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