What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
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IXYS
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230A (Tc) | 75 V | 10V | - | N-Channel | 178 nC @ 10 V | 10500 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 480W (Tc) | 4.2mOhm @ 50A, 10V | TO-263AA (IXFA) | MOSFET (Metal Oxide) | ±20V | 4V @ 1mA | |
Infineon Technologies
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31.2A (Tc) | 650 V | 10V | - | N-Channel | 118 nC @ 10 V | 3240 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 277.8W (Tc) | 110mOhm @ 12.7A, 10V | PG-TO247-3-1 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 1.3mA | |
Infineon Technologies
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69A (Tc) | 250 V | 10V | - | N-Channel | 86 nC @ 10 V | 7000 pF @ 125 V | Surface Mount | -55°C ~ 175°C (TJ) | 375W (Tc) | 21mOhm @ 69A, 10V | PG-HSOF-8-1 | MOSFET (Metal Oxide) | ±20V | 4V @ 267µA | |
IXYS
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8A (Tc) | 850 V | 10V | - | N-Channel | 17 nC @ 10 V | 654 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 200W (Tc) | 850mOhm @ 4A, 10V | TO-263AA (IXFA) | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
WeEn Semiconductors
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24A (Ta) | 1200 V | 20V | - | N-Channel | 35 nC @ 20 V | 736 pF @ 1000 V | Through Hole | -55°C ~ 175°C (TJ) | 155W (Ta) | 196mOhm @ 10A, 20V | TO-247-3 | MOSFET (Metal Oxide) | +25V, -10V | 4.5V @ 3mA | |
Infineon Technologies
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64A (Tc) | 250 V | 10V | - | N-Channel | 86 nC @ 10 V | 7100 pF @ 100 V | Through Hole | -55°C ~ 175°C (TJ) | 300W (Tc) | 20mOhm @ 64A, 10V | PG-TO262-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 270µA | |
IXYS
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140A (Tc) | 120 V | 10V | - | N-Channel | 174 nC @ 10 V | 9700 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 577W (Tc) | 10mOhm @ 70A, 10V | TO-263AA | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
IXYS
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STMicroelectronics
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38A (Tc) | 650 V | 10V | - | N-Channel | 69 nC @ 10 V | 3200 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 87mOhm @ 19A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
IXYS
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96A (Tc) | 250 V | 10V | - | N-Channel | 114 nC @ 10 V | 6100 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 625W (Tc) | 29mOhm @ 500mA, 10V | TO-3P | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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32A (Tc) | 650 V | 10V | - | N-Channel | 54 nC @ 10 V | 2205 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 135mOhm @ 16A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
Vishay
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47A (Tc) | 600 V | 10V | - | N-Channel | 225 nC @ 10 V | 4854 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 379W (Tc) | 65mOhm @ 24A, 10V | TO-247AD | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
IXYS
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102A (Tc) | 150 V | 10V | - | N-Channel | 87 nC @ 10 V | 5220 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 455W (Tc) | 18mOhm @ 500mA, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±20V | 5V @ 1mA | |
IXYS
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86A (Tc) | 200 V | - | - | N-Channel | - | - | Through Hole | - | - | - | TO-247 (IXTH) | MOSFET (Metal Oxide) | - | - | |
IXYS
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86A (Tc) | 250 V | 10V | - | N-Channel | 105 nC @ 10 V | 5330 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 540W (Ta) | 37mOhm @ 43A, 10V | TO-3P | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Infineon Technologies
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16A (Tc) | 600 V | 10V | - | N-Channel | 68 nC @ 10 V | 2850 pF @ 400 V | Through Hole | -55°C ~ 150°C (TJ) | 34W (Tc) | 60mOhm @ 15.9A, 10V | PG-TO220-FP | MOSFET (Metal Oxide) | ±20V | 4V @ 800µA | |
STMicroelectronics
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35A (Tc) | 650 V | 10V | - | N-Channel | 82 nC @ 10 V | 3470 pF @ 100 V | Through Hole | 150°C (TJ) | 57W (Tc) | 78mOhm @ 17.5A, 10V | TO-3PF | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
Infineon Technologies
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160A (Tc) | 40 V | 10V | - | N-Channel | 196 nC @ 10 V | 5669 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 333W (Tc) | 4mOhm @ 121A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
IXYS
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32A (Tc) | 650 V | 10V | - | N-Channel | 54 nC @ 10 V | 2205 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 135mOhm @ 16A, 10V | TO-3P | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
Infineon Technologies
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- | 600 V | - | - | - | - | - | Surface Mount | - | - | - | PG-HDSOP-22-1 | MOSFET (Metal Oxide) | - | - | |
IXYS
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26A (Tc) | 600 V | 10V | - | N-Channel | 72 nC @ 10 V | 4150 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 460W (Tc) | 270mOhm @ 500mA, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
IXYS
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18A (Tc) | 600 V | 10V | - | N-Channel | 35 nC @ 10 V | 1440 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 230mOhm @ 9A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 4.5V @ 1.5mA | |
Vishay
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73A (Tc) | 600 V | 10V | - | N-Channel | 362 nC @ 10 V | 7700 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 520W (Tc) | 39mOhm @ 36A, 10V | TO-247AD | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
IXYS
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102A (Tc) | 150 V | 10V | - | N-Channel | 87 nC @ 10 V | 5220 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 455W (Tc) | 18mOhm @ 500mA, 10V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ±20V | 5V @ 1mA | |
IXYS
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90A (Tc) | 200 V | 10V | - | N-Channel | 78 nC @ 10 V | 5420 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 390W (Tc) | 12.8mOhm @ 45A, 10V | TO-263 (D2Pak) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 1.5mA | |
IXYS
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72A (Tc) | 300 V | 10V | - | N-Channel | 82 nC @ 10 V | 5400 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 390W (Tc) | 19mOhm @ 36A, 10V | TO-263 (D2Pak) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 1.5mA | |
STMicroelectronics
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55A (Tc) | 650 V | 10V | - | N-Channel | 80 nC @ 10 V | 4610 pF @ 400 V | Through Hole | -55°C ~ 150°C (TJ) | 245W (Tc) | 45mOhm @ 28A, 10V | TO-220 | MOSFET (Metal Oxide) | ±30V | 4.2V @ 250µA | |
STMicroelectronics
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58A (Tc) | 600 V | 10V | - | N-Channel | 72.5 nC @ 10 V | 3400 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 431W (Tc) | 54mOhm @ 23.5A, 10V | TO-247 Long Leads | MOSFET (Metal Oxide) | ±25V | 4.75V @ 250µA | |
Microchip Technology
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18A (Tc) | 800 V | 10V | - | N-Channel | 122 nC @ 10 V | 3757 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 580mOhm @ 9A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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34A (Tc) | 650 V | 10V | - | N-Channel | 56 nC @ 10 V | 3230 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 40W (Tc) | 100mOhm @ 17A, 10V | TO-220 Isolated Tab | MOSFET (Metal Oxide) | ±30V | 5V @ 1.5mA | |
IXYS
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18A (Tc) | 600 V | 10V | - | N-Channel | 35 nC @ 10 V | 1440 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 230mOhm @ 9A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 4.5V @ 1.5mA | |
IXYS
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42A (Tc) | 500 V | 10V | - | N-Channel | 88 nC @ 10 V | 5400 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 830W (Tc) | 145mOhm @ 500mA, 10V | TO-3P | MOSFET (Metal Oxide) | ±30V | 4.5V @ 250µA | |
IXYS
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1.83A (Tc) | 1500 V | 10V | - | N-Channel | 38.6 nC @ 10 V | 1375 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 73W (Tc) | 7.3Ohm @ 1.5A, 10V | TO-3PFP | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
IXYS
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86A (Tc) | 250 V | 10V | - | N-Channel | 105 nC @ 10 V | 5330 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 540W (Ta) | 37mOhm @ 43A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Infineon Technologies
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- | 650 V | 18V | - | - | - | - | Surface Mount | - | - | - | PG-HSOF-8-1 | SiCFET (Silicon Carbide) | - | - | |
Vishay
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60A (Tc) | 600 V | 10V | - | N-Channel | 410 nC @ 10 V | 5348 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 417W (Tc) | 41mOhm @ 35A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
IXYS
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21A (Tc) | 500 V | 10V | - | N-Channel | 190 nC @ 10 V | 4200 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 250mOhm @ 10.5A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
IXYS
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3A (Tc) | 1500 V | 10V | - | N-Channel | 38.6 nC @ 10 V | 1375 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 250W (Tc) | 7.3Ohm @ 1.5A, 10V | TO-263HV | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Toshiba
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35A (Ta) | 650 V | 10V | - | N-Channel | 115 nC @ 10 V | 4100 pF @ 300 V | Through Hole | 150°C (TJ) | 270W (Tc) | 95mOhm @ 17.5A, 10V | TO-247 | MOSFET (Metal Oxide) | ±30V | 4.5V @ 2.1mA | |
IXYS
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140A (Tc) | 100 V | 10V, 15V | - | N-Channel | 155 nC @ 10 V | 4700 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 600W (Tc) | 11mOhm @ 70A, 10V | TO-268 | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
IXYS
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96A (Tc) | 200 V | 10V | - | N-Channel | 145 nC @ 10 V | 4800 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 600W (Tc) | 24mOhm @ 48A, 10V | TO-268 | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
ROHM Semiconductor
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25A (Tc) | 600 V | 15V | - | N-Channel | 57 nC @ 15 V | 1900 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 85W (Tc) | 182mOhm @ 12.5A, 15V | TO-3PF | MOSFET (Metal Oxide) | ±30V | 7V @ 4.5mA | |
Microchip Technology
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37A (Tc) | 500 V | 10V | - | N-Channel | 145 nC @ 10 V | 5710 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 520W (Tc) | 150mOhm @ 18A, 10V | D3Pak | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
IXYS
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9A (Tc) | 650 V | 10V | - | N-Channel | 35 nC @ 10 V | 1390 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 63W (Tc) | 210mOhm @ 10A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
Toshiba
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38A (Ta) | 650 V | 10V | - | N-Channel | 62 nC @ 10 V | 3650 pF @ 300 V | Through Hole | 150°C | 270W (Tc) | 65mOhm @ 19A, 10V | TO-247-4L(T) | MOSFET (Metal Oxide) | ±30V | 4V @ 1.69mA | |
STMicroelectronics
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68A (Tc) | 600 V | 10V | - | N-Channel | 118 nC @ 10 V | 5200 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 450W (Tc) | 40mOhm @ 34A, 10V | TO-247-4 | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
IXYS
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20A (Tc) | 650 V | 10V | - | N-Channel | 35 nC @ 10 V | 1390 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 320W (Tc) | 210mOhm @ 10A, 10V | TO-263AA | MOSFET (Metal Oxide) | ±30V | 5.5V @ 250µA | |
Vishay
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70A (Tc) | 600 V | 10V | - | N-Channel | 380 nC @ 10 V | 7500 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 520W (Tc) | 38mOhm @ 35A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Linear Integrated Systems, Inc.
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50mA | 40 V | 20V | - | P-Channel | - | 3.5 pF @ 15 V | Through Hole | - | 375mW | 250Ohm @ 100µA, 20V | TO-72-4 | MOSFET (Metal Oxide) | -6.5V | 5V @ 10µA | |
IXYS
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