What are Transistors - FETs, MOSFETs - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS
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6A (Tc) | 1200 V | 10V | - | N-Channel | 56 nC @ 10 V | 1950 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 300W (Tc) | 2.6Ohm @ 3A, 10V | TO-268 | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
IXYS
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22A (Tc) | 150 V | 10V | - | P-Channel | 55 nC @ 10 V | 2950 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 150W (Tc) | 120mOhm @ 18A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
IXYS
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90A (Tc) | 100 V | 10V | - | N-Channel | 152 nC @ 10 V | 9400 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 156W (Tc) | 7mOhm @ 50A, 10V | ISOPLUS i4-PAC™ | MOSFET (Metal Oxide) | ±30V | 4.5V @ 250µA | |
Microchip Technology
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56A (Tc) | 500 V | 10V | - | N-Channel | 220 nC @ 10 V | 8800 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 780W (Tc) | 100mOhm @ 28A, 10V | T-MAX™ | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
IXYS
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69A (Tc) | 300 V | 10V | - | N-Channel | 180 nC @ 10 V | 4960 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 500W (Tc) | 49mOhm @ 500mA, 10V | TO-268AA | MOSFET (Metal Oxide) | ±20V | 5V @ 4mA | |
IXYS
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80A (Tc) | 250 V | 10V | - | N-Channel | 83 nC @ 10 V | 5430 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 390W (Tc) | 16mOhm @ 40A, 10V | TO-3P | MOSFET (Metal Oxide) | ±20V | 4.5V @ 1.5mA | |
Microchip Technology
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17A (Tc) | 600 V | - | - | N-Channel | 43 nC @ 10 V | 1850 pF @ 25 V | Surface Mount | - | - | 380mOhm @ 8.5A, 10V | D3 [S] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
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15A (Tc) | 600 V | 10V | - | N-Channel | 85 nC @ 10 V | 3820 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 166W (Tc) | 250mOhm @ 15A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±30V | 5V @ 4mA | |
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6A (Tj) | 1000 V | 0V | Depletion Mode | N-Channel | 95 nC @ 5 V | 2650 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 300W (Tc) | 2.2Ohm @ 3A, 0V | TO-263HV | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
Microchip Technology
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27A (Tc) | 500 V | - | - | N-Channel | 58 nC @ 10 V | 2596 pF @ 25 V | Surface Mount | - | - | 180mOhm @ 13.5A, 10V | D3 [S] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
IXYS
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110A (Tc) | 70 V | 10V | - | N-Channel | 480 nC @ 10 V | 9000 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 500W (Tc) | 6mOhm @ 55A, 10V | TO-264AA (IXFK) | MOSFET (Metal Oxide) | ±20V | 4V @ 8mA | |
IXYS
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24A (Tc) | 800 V | 10V | - | N-Channel | 105 nC @ 10 V | 7200 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 650W (Tc) | 400mOhm @ 12A, 10V | TO-268AA | MOSFET (Metal Oxide) | ±30V | 5V @ 4mA | |
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120A (Tc) | 200 V | 10V | - | N-Channel | 152 nC @ 10 V | 6000 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 714W (Tc) | 22mOhm @ 500mA, 10V | TO-264 (IXTK) | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
IXYS
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88A (Tc) | 300 V | 10V | - | N-Channel | 180 nC @ 10 V | 6300 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 600W (Tc) | 40mOhm @ 44A, 10V | TO-264 (IXTK) | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
Microchip Technology
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26A (Tc) | 500 V | - | - | N-Channel | 225 nC @ 10 V | 4440 pF @ 25 V | Surface Mount | - | - | 200mOhm @ 500mA, 10V | D3 [S] | MOSFET (Metal Oxide) | - | 4V @ 1mA | |
Microchip Technology
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14A (Tc) | 1200 V | 10V | - | N-Channel | 145 nC @ 10 V | 4765 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 625W (Tc) | 1.2Ohm @ 7A, 10V | D3Pak | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
STMicroelectronics
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48A (Tc) | 650 V | 10V | - | N-Channel | 88 nC @ 10 V | 4100 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 360W (Tc) | 65mOhm @ 24A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
Microchip Technology
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25A (Tc) | 800 V | 10V | - | N-Channel | 150 nC @ 10 V | 4595 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 625W (Tc) | 390mOhm @ 12A, 10V | D3Pak | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Microchip Technology
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3.5A (Tc) | 1200 V | - | - | N-Channel | 31 nC @ 10 V | 715 pF @ 25 V | Surface Mount | - | - | 4.7Ohm @ 1.75A, 10V | D3 [S] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
Microchip Technology
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21A (Tc) | 600 V | - | - | N-Channel | 65 nC @ 10 V | 2615 pF @ 25 V | Surface Mount | - | - | 290mOhm @ 10.5A, 10V | D3 [S] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
Microchip Technology
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36A (Tc) | 600 V | 10V | - | N-Channel | 165 nC @ 10 V | 6640 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 624W (Tc) | 190mOhm @ 17A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Microchip Technology
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75A (Tc) | 500 V | 10V | - | N-Channel | 290 nC @ 10 V | 11600 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1040W (Tc) | 75mOhm @ 37A, 10V | T-MAX™ | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
IXYS
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30A (Tc) | 500 V | 10V | - | N-Channel | 70 nC @ 10 V | 4150 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 460W (Tc) | 200mOhm @ 15A, 10V | TO-268AA | MOSFET (Metal Oxide) | ±30V | 5V @ 4mA | |
IXYS
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10A (Tc) | 600 V | 10V | - | P-Channel | 92 nC @ 10 V | 5120 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 190W (Tc) | 790mOhm @ 8A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
IXYS
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13A (Tc) | 500 V | 10V | - | P-Channel | 103 nC @ 10 V | 5120 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 190W (Tc) | 490mOhm @ 10A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
IXYS
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220A (Tc) | 170 V | 10V | - | N-Channel | 500 nC @ 10 V | 31000 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 1250W (Tc) | 6.3mOhm @ 60A, 10V | PLUS247™-3 | MOSFET (Metal Oxide) | ±20V | 5V @ 8mA | |
Microchip Technology
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4A (Tc) | 1000 V | 10V | - | N-Channel | 34 nC @ 10 V | 694 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 139W (Tc) | 3Ohm @ 2A, 10V | D3PAK | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Infineon Technologies
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- | 600 V | - | - | - | - | - | Surface Mount | - | - | - | PG-HDSOP-22-1 | MOSFET (Metal Oxide) | - | - | |
Microchip Technology
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36A (Tc) | 600 V | 10V | - | N-Channel | 165 nC @ 10 V | 6640 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 624W (Tc) | 190mOhm @ 17A, 10V | D3PAK | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
Microchip Technology
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45A (Tc) | 600 V | 10V | - | N-Channel | 215 nC @ 10 V | 8590 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 780W (Tc) | 150mOhm @ 21A, 10V | T-MAX™ [B2] | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
IXYS
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67A (Tc) | 100 V | 10V | - | N-Channel | 260 nC @ 10 V | 4500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 25mOhm @ 33.5A, 10V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ±20V | 4V @ 4mA | |
ALPHA & OMEGA SEMICONDU CTOR
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40.3A (Tc) | 1200 V | 15V | - | N-Channel | 62.3 nC @ 15 V | 1716 pF @ 800 V | Through Hole | -55°C ~ 175°C (TJ) | 187.5W (Ta) | 85mOhm @ 10A, 15V | TO-247-4L | SiC (Silicon Carbide Junction Transistor) | +15V, -5V | 3.5V @ 10mA | |
IXYS
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60A (Tc) | 650 V | 10V | - | N-Channel | 108 nC @ 10 V | 6300 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 780W (Tc) | 52mOhm @ 30A, 10V | TO-268HV (IXFT) | MOSFET (Metal Oxide) | ±30V | 5V @ 4mA | |
IXYS
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15A (Tc) | 800 V | 10V | - | N-Channel | 90 nC @ 10 V | 4300 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 600mOhm @ 7.5A, 10V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 4mA | |
IXYS
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24A (Tc) | 900 V | 10V | - | N-Channel | 130 nC @ 10 V | 7200 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 660W (Tc) | 420mOhm @ 12A, 10V | TO-268 | MOSFET (Metal Oxide) | ±30V | 6.5V @ 1mA | |
Microchip Technology
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45A (Tc) | 600 V | 10V | - | N-Channel | 215 nC @ 10 V | 8590 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 780W (Tc) | 150mOhm @ 21A, 10V | TO-264 [L] | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
IXYS
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19A (Tc) | 500 V | 10V | - | N-Channel | 93 nC @ 10 V | 5500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 156W (Tc) | 190mOhm @ 18A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±30V | 5V @ 4mA | |
IXYS
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30A (Tc) | 500 V | 10V | - | N-Channel | 240 nC @ 10 V | 8100 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 400W (Tc) | 200mOhm @ 15A, 10V | TO-3P | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
Microchip Technology
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74A (Tc) | 200 V | - | - | N-Channel | 60 nC @ 10 V | 3660 pF @ 25 V | Through Hole | - | - | 34mOhm @ 37A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
Microchip Technology
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67A (Tc) | 200 V | 10V | - | N-Channel | 225 nC @ 10 V | 6120 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 370W (Tc) | 38mOhm @ 33.5A, 10V | D3Pak | MOSFET (Metal Oxide) | ±30V | 4V @ 1mA | |
Microchip Technology
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43A (Tc) | 800 V | 10V | - | N-Channel | 260 nC @ 10 V | 8070 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 1040W (Tc) | 210mOhm @ 20A, 10V | TO-264 [L] | MOSFET (Metal Oxide) | ±30V | 5V @ 2.5mA | |
Microchip Technology
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75A (Tc) | 100 V | - | - | N-Channel | 300 nC @ 10 V | 6120 pF @ 25 V | Surface Mount | - | - | 19mOhm @ 37.5A, 10V | D3 [S] | MOSFET (Metal Oxide) | - | 4V @ 1mA | |
Microchip Technology
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24A (Tc) | 600 V | - | - | N-Channel | 65 nC @ 10 V | 2910 pF @ 25 V | Through Hole | - | - | 250mOhm @ 12A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
Microchip Technology
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77A (Tc) | 600 V | 10V | - | N-Channel | 260 nC @ 10 V | 13600 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 481W (Tc) | 41mOhm @ 44.4A, 10V | D3Pak | MOSFET (Metal Oxide) | ±20V | 3.6V @ 2.96mA | |
IXYS
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120A (Tc) | 250 V | 10V | - | N-Channel | 185 nC @ 10 V | 8000 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 700W (Tc) | 24mOhm @ 60A, 10V | TO-264AA (IXFK) | MOSFET (Metal Oxide) | ±20V | 5V @ 4mA | |
IXYS
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15A (Tc) | 1000 V | 10V | - | N-Channel | 64 nC @ 10 V | 3250 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 690W (Tc) | 1.05Ohm @ 7.5A, 10V | TO-268 | MOSFET (Metal Oxide) | ±30V | 6.5V @ 4mA | |
IXYS
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6A (Tc) | 1000 V | 10V | - | N-Channel | 130 nC @ 10 V | 2600 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 180W (Tc) | 2Ohm @ 500mA, 10V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 2.5mA | |
Infineon Technologies
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46A (Tc) | 600 V | 10V | - | N-Channel | 322 nC @ 10 V | 7700 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 417W (Tc) | 83mOhm @ 29A, 10V | PG-TO247-3-1 | MOSFET (Metal Oxide) | ±20V | 5V @ 2.9mA | |
Microchip Technology
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24A (Tc) | 600 V | - | - | N-Channel | 65 nC @ 10 V | 2910 pF @ 25 V | Through Hole | - | - | 250mOhm @ 12A, 10V | TO-247 [B] | MOSFET (Metal Oxide) | - | 5V @ 1mA | |
On Semiconductor
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75A (Tc) | 650 V | 10V | - | N-Channel | 227 nC @ 10 V | 7780 pF @ 400 V | Through Hole | -55°C ~ 150°C (TJ) | 595W (Tc) | 27.4mOhm @ 35A, 10V | TO-247-4L | MOSFET (Metal Oxide) | ±30V | 5V @ 3mA |