What are Transistors - FETs, MOSFETs - Arrays ?
Transistors - FETs, MOSFETs - Arrays are semiconductor devices that control the flow of electrical signals, commonly used in power management applications. They are integral in industrial power management, new product design, and production electronics assembly. Important specifications include Configuration, which determines the transistor's arrangement for optimal performance; Drain to Source Voltage (Vdss), which defines the maximum voltage the transistor can handle; and Gate Charge (Qg) (Max) @ Vgs, which affects switching speed and efficiency. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
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| Part & Mfr | Total Stock | Pricing & RFQ | Configuration | Current | Drain to Source Voltage (Vdss) | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | |
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Diodes Incorporated
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2 P-Channel (Dual) | - | 20V | Logic Level Gate | 5.25nC @ 4.5V | 290pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.04W | 270mOhm @ 1.2A, 4.5V | 8-MSOP | MOSFET (Metal Oxide) | 700mV @ 250µA (Min) | |
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Diodes Incorporated
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2 P-Channel (Dual) | - | 30V | Logic Level Gate | 7nC @ 10V | 270pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 1.04W | 185mOhm @ 1.2A, 10V | 8-MSOP | MOSFET (Metal Oxide) | 1V @ 250µA (Min) | |
Diodes Incorporated
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2 P-Channel (Dual) | 4A | 20V | - | 20nC @ 4.5V | 960pF @ 15V | Surface Mount | - | 1.75W | 50mOhm @ 2.9A, 4.5V | 8-SO | MOSFET (Metal Oxide) | 700mV @ 250µA (Min) | |
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Diodes Incorporated
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2 N-Channel (Dual) | 1.6A | 100V | Logic Level Gate | 7.7nC @ 10V | 405pF @ 50V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W | 250mOhm @ 3.2A, 10V | 8-SO | MOSFET (Metal Oxide) | 2V @ 250µA (Min) | |
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Diodes Incorporated
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2 N-Channel (Dual) | 5.9A | 20V | Logic Level Gate | 22.1nC @ 5V | 1880pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W | 25mOhm @ 5.9A, 4.5V | 8-SO | MOSFET (Metal Oxide) | 700mV @ 250µA (Min) | |
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Diodes Incorporated
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2 N-Channel (Dual) | 6.5A | 30V | Logic Level Gate | 36.8nC @ 10V | 1890pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.81W | 20mOhm @ 12.6A, 10V | 8-SO | MOSFET (Metal Oxide) | 1V @ 250µA (Min) | |
Infineon Technologies
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Diodes Incorporated
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2 N-Channel (Dual) | - | 30V | - | - | - | Surface Mount | - | - | - | 8-SO | MOSFET (Metal Oxide) | - | |
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Diodes Incorporated
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2 N-Channel (Dual) | 4.3A | 60V | Logic Level Gate | 24.2nC @ 5V | 1407pF @ 40V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W | 40mOhm @ 8.2A, 10V | 8-SO | MOSFET (Metal Oxide) | 3V @ 250µA | |
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Microchip Technology
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Diodes Incorporated
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2 N-Channel (Dual) | 280mA | 60V | - | - | 50pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 150mW | 7.5Ohm @ 50mA, 5V | SOT-563 | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
STMicroelectronics
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N and P-Channel | 3A | 100V | Logic Level Gate | 20nC @ 10V | 460pF @ 25V | Surface Mount | 150°C (TJ) | 2W | 145mOhm @ 1.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 2V @ 250µA | |
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Renesas
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Microchip Technology
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WOLFSPEED
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2 N-Channel (Half Bridge) | 630A (Tc) | 1200V (1.2kV) | - | 1362nC @ 15V | 38900pF @ 800V | Chassis Mount | -40°C ~ 150°C (TJ) | - | 3.47mOhm @ 530A, 15V | - | Silicon Carbide (SiC) | 3.6V @ 127mA | |
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Infineon Technologies
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2 N-Channel (Dual) | 9.1A, 11A | 30V | Logic Level Gate | 10nC @ 4.5V | 850pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 16.4mOhm @ 9.1A, 10V | 8-SO | MOSFET (Metal Oxide) | 2.35V @ 25µA | |
WOLFSPEED
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2 N-Channel (Dual) Common Source | 630A (Tc) | 1200V (1.2kV) | - | 1362nC @ 15V | 38900pF @ 800V | Chassis Mount | -40°C ~ 150°C (TJ) | - | 3.47mOhm @ 530A, 15V | - | Silicon Carbide (SiC) | 3.6V @ 127mA | |
On Semiconductor
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2 N-Channel (Dual) | - | 60V | Logic Level Gate | 11.2nC @ 10V | 330pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W | 90mOhm @ 3.8A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
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On Semiconductor
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2 N-Channel (Dual) | 4.5A | 20V | Logic Level Gate | - | - | Surface Mount | -55°C ~ 150°C (TJ) | 900mW | 60mOhm @ 4.5A, 4.5V | 8-SOIC | MOSFET (Metal Oxide) | 1V @ 250µA | |
On Semiconductor
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2 N-Channel (Dual) | 7.5A | 20V | Logic Level Gate | 28nC @ 4.5V | 2152pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.1W | 19mOhm @ 7.5A, 4.5V | 8-TSSOP | MOSFET (Metal Oxide) | 1.5V @ 250µA | |
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Infineon Technologies
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2 N-Channel (Half Bridge) | 500A (Tc) | 1200V (1.2kV) | - | 1340nC @ 15V | 39700pF @ 800V | Chassis Mount | -40°C ~ 150°C (TJ) | - | 2.13mOhm @ 500A, 15V | AG-62MMHB | MOSFET (Metal Oxide) | 5.15V @ 224mA | |
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On Semiconductor
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2 P-Channel (Dual) | 4.4A | 20V | Logic Level Gate | 21nC @ 5V | 1465pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 600mW | 35mOhm @ 4.4A, 4.5V | 8-TSSOP | MOSFET (Metal Oxide) | 1.5V @ 250µA | |
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Infineon Technologies
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2 N-Channel (Dual) | 8A | 30V | Logic Level Gate | 17nC @ 5V | 870pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 20mOhm @ 8A, 10V | PG-DSO-8 | MOSFET (Metal Oxide) | 2V @ 30µA | |
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Infineon Technologies
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N and P-Channel | 3A, 2A | 60V | - | 15.5nC @ 10V | 340pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 120mOhm @ 3A, 10V | PG-DSO-8 | MOSFET (Metal Oxide) | 4V @ 20µA | |
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Infineon Technologies
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N and P-Channel | 3.1A, 2A | 60V | Logic Level Gate | 22.5nC @ 10V | 380pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 110mOhm @ 3.1A, 10V | PG-DSO-8 | MOSFET (Metal Oxide) | 2V @ 20µA | |
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Infineon Technologies
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2 N-Channel (Dual) | 2.6A | 60V | Logic Level Gate | 20nC @ 10V | 380pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 150mOhm @ 2.6A, 4.5V | PG-DSO-8 | MOSFET (Metal Oxide) | 2V @ 20µA | |
Diodes Incorporated
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2 N-Channel (Dual) | 280mA | 50V | Logic Level Gate | - | 50pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 200mW | 3Ohm @ 200mA, 2.7V | SOT-363 | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
Diodes Incorporated
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4 N-Channel (Half Bridge) | 1.4A | 60V | Logic Level Gate | 3.2nC @ 10V | 166pF @ 40V | Surface Mount | -55°C ~ 150°C (TJ) | 1.6W | 300mOhm @ 1.8A, 10V | SM8 | MOSFET (Metal Oxide) | 3V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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N and P-Channel Complementary | 7A (Ta), 5.7A (Ta) | 30V | - | 20nC @ 10V, 33nC @ 10V | 600pF @ 15V, 1100pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.7W (Ta) | 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 2.3V @ 250µA, 2.2V @ 250µA | |
Panasonic Electronic Components
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2 N-Channel (Dual) | 100mA | 30V | Logic Level Gate | - | 12pF @ 3V | Surface Mount | 125°C (TJ) | 125mW | 8Ohm @ 10mA, 4V | SSMini5-F2 | MOSFET (Metal Oxide) | 1.5V @ 1µA | |
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Renesas
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Nexperia USA Inc.
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2 N-Channel (Dual) | 10.9A | 20V | Logic Level Gate | 15.3nC @ 5V | 950pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 4.17W | 20mOhm @ 3A, 5V | 8-SO | MOSFET (Metal Oxide) | 1.5V @ 250µA | |
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On Semiconductor
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2 N-Channel (Dual) | 3.2A | 20V | Logic Level Gate | 3nC @ 4.5V | 200pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 800mW | 90mOhm @ 3.2A, 4.5V | MicroFET 2x2 Thin | MOSFET (Metal Oxide) | 1.5V @ 250µA | |
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Diodes Incorporated
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N and P-Channel | 5.8A, 4.8A | 30V | Logic Level Gate | 36nC @ 10V | 1800pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W | 25mOhm @ 5.8A, 10V | 8-SO | MOSFET (Metal Oxide) | 1V @ 250µA (Min) | |
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Infineon Technologies
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2 P-Channel (Dual) | 8.2A | 30V | Logic Level Gate | 72.5nC @ 10V | 1761pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 21mOhm @ 8.2A, 10V | PG-DSO-8 | MOSFET (Metal Oxide) | 2V @ 100µA | |
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Renesas
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2 N-Channel (Dual) | 5A | 60V | Logic Level Gate | - | 520pF @ 10V | Surface Mount | 150°C (TJ) | 3W | 58mOhm @ 3A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.2V @ 1mA | |
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Diodes Incorporated
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2 N-Channel (Dual) | 305mA | 50V | Logic Level Gate | - | 50pF @ 25V | Surface Mount | -65°C ~ 150°C (TJ) | 250mW | 2Ohm @ 50mA, 5V | SOT-363 | MOSFET (Metal Oxide) | 1V @ 250µA | |
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Infineon Technologies
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2 N-Channel (Dual) | 7.6A | 30V | - | 15nC @ 5V | 1890pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.4W | 15mOhm @ 9.1A, 10V | PG-DSO-8 | MOSFET (Metal Oxide) | 2V @ 25µA | |
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Infineon Technologies
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2 N-Channel (Dual) | 6.6A | 30V | Logic Level Gate | 8nC @ 5V | 1010pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.4W | 20mOhm @ 7.9A, 10V | PG-DSO-8 | MOSFET (Metal Oxide) | 2V @ 13µA | |
On Semiconductor
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N and P-Channel | 9A, 6.5A | 40V | Logic Level Gate | 20nC @ 10V | 1000pF @ 20V | Surface Mount | -55°C ~ 150°C (TJ) | 1.3W | 24mOhm @ 9A, 10V | TO-252 (DPAK) | MOSFET (Metal Oxide) | 3V @ 250µA | |
On Semiconductor
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2 N-Channel (Dual) | 3.3A (Ta) | 62V | Logic Level Gate | 4.3nC @ 5V | 300pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2.27W (Ta) | 110mOhm @ 3.3A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
WOLFSPEED
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2 N-Channel (Half Bridge) | 417A (Tc) | 1200V (1.2kV) | - | 844nC @ 15V | 25700pF @ 800V | Chassis Mount | -40°C ~ 150°C (TJ) | - | 5.2mOhm @ 350A, 15V | - | Silicon Carbide (SiC) | 3.6V @ 85mA | |
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Microchip Technology
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On Semiconductor
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2 P-Channel (Dual) | 2.5A | 25V | Logic Level Gate | 15nC @ 10V | 475pF @ 16V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 250mOhm @ 2A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
Microchip Technology
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2 N-Channel | 689A (Tc) | 700V | - | 1290nC @ 20V | 27pF @ 700V | Chassis Mount | - | 1882W (Tc) | - | SP6C LI | Silicon Carbide (SiC) | 2.4V @ 24mA (Typ) | |
On Semiconductor
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N and P-Channel | 2.9A, 3.2A | 20V | Logic Level Gate | 2.3nC @ 4.5V | 165pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.1W | 80mOhm @ 2.9A, 4.5V | ChipFET™ | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
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On Semiconductor
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N and P-Channel | 2.9A, 3.2A | 20V | Logic Level Gate | 2.3nC @ 4.5V | 165pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.1W | 80mOhm @ 2.9A, 4.5V | ChipFET™ | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
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On Semiconductor
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2 P-Channel (Dual) | 2.1A | 20V | Logic Level Gate | 6nC @ 4.5V | 300pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.1W | 155mOhm @ 2.1A, 4.5V | ChipFET™ | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
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Microchip Technology
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2 N Channel (Phase Leg) | 495A (Tc) | 1200V (1.2kV) | - | 1392nC @ 20V | 18.1pF @ 1000V | Chassis Mount | -40°C ~ 175°C (TJ) | 2.031kW (Tc) | 5.2mOhm @ 240A, 20V | SP6C | Silicon Carbide (SiC) | 2.8V @ 6mA | |
Advanced Linear Devices Inc.
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4 P-Channel, Matched Pair | - | 8V | - | - | 2.5pF @ 5V | Through Hole | 0°C ~ 70°C | 500mW | - | 16-PDIP | MOSFET (Metal Oxide) | 380mV @ 1µA |
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